D3SB80 PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D3SB80
MANUFACTURER: Shindengen

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
D1
DD3SB80
SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: D3SB80
* MANUFACTURER: SHINDENGEN
* VRRM=800V, IF=4A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
.MODEL D3SB80 D
+ IS=19.021E-12
+ N=1.2905
+ RS=14.401E-3
+ IKF=38.420
+ CJO=95.481E-12
+ M=.28658
+ VJ=.40995
+ ISR=0
+ BV=840
+ IBV=10.000E-6
+ TT=11.00E-6
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(R1)
100mA
1.0A
10A
V1
0V
R1
0.01m
0
D1
D3SB80
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
ForwordCurrent,IF(A)
Forward Voltage, VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.750 0.748 -0.27
0.2 0.770 0.773 0.39
0.5 0.810 0.808 -0.25
1 0.840 0.839 -0.12
2 0.875 0.877 0.23
4 0.930 0.923 -0.75

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V1
TD = 0
TF = 100ns
PW = 100us
PER = 10ms
V1 = 0
TR = 1us
V2 = 800
V2
0V
R
0
D1
D3SB80
V(R)
100mV 1.0V 10V 100V
I(V2)/(800V/1u)
10p
20p
30p
40p
50p
60p
70p
80p
90p
100p
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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10
20
30
40
50
60
70
80
90
100
0.1 1 10 100
Capacitance,C(pF)
Reverse Voltage, VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
C (pF)
%Error
Measurement Simulation
0.1 89.748 89.900 0.17
0.2 85.335 85.317 -0.02
0.5 75.662 75.900 0.31
1 66.916 67.088 0.26
2 57.441 57.600 0.28
5 45.863 45.600 -0.57
10 38.075 37.800 -0.72
20 31.252 31.135 -0.37
50 23.868 24.063 0.82
100 19.424 19.800 1.94

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Time
12us 16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
R1
50
V1TD = 0us
TF = 10ns
PW = 20us
PER = 60us
V1 = -9.23V
TR = 10ns
V2 = 10.7V
0
D1
D3SB80
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 6.56 6.51 -0.76

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Reverse Recovery Characteristics Reference
Trj = 6.56 (us)
Trb = 4.96 (us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example