The document details the modeling report for the 1SS397 diode manufactured by Toshiba, including its SPICE model parameters and characteristics. It presents circuit simulation results for forward current, reverse recovery, and capacitance characteristics, along with comparison graphs and error measurements. All data and figures reflect the modeling and performance metrics established by Bee Technologies Inc. in 2008.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS397
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: 1SS397
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL 1SS397 D
+ IS=622.22E-12
+ N=1.8847
+ RS=1.0000E- 6
+ IKF=84.196E-3
+ CJO=2.2242E-12
+ M=.30387
+ VJ=.4756
+ BV=400
+ IBV=1.0000E-6
+ TT=550e- 9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Forward Current Characteristic
Circuit Simulation Result
100mA
10mA
1.0mA
100uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
1SS397
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.0001 0.589 0.584 -0.85
0.0002 0.618 0.618 0.00
0.0005 0.659 0.662 0.46
0.001 0.694 0.696 0.29
0.002 0.731 0.730 -0.14
0.005 0.775 0.776 0.13
0.01 0.812 0.811 -0.12
0.02 0.852 0.848 -0.47
0.05 0.903 0.901 -0.22
0.1 0.947 0.948 0.11
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
10mV 100mV 1.0V 10V 100V
I(V2)/(400V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1
V1 = 0 D1
TD = 0 1SS397
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.01 2.221 2.215 -0.27
0.02 2.203 2.201 -0.09
0.05 2.151 2.159 0.37
0.1 2.091 2.099 0.38
0.2 1.993 1.999 0.30
0.5 1.78 1.788 0.45
1 1.588 1.577 -0.69
2 1.338 1.347 0.67
5 1.072 1.059 -1.21
10 0.881 0.869 -1.36
20 0.702 0.709 1.00
50 0.532 0.538 1.13
100 0.432 0.437 1.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.2us 20.0us 20.8us 21.6us 22.4us 23.2us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.2V V1
V2 = 11.0V D1
TD = 300ns 1SS397
TR = 5ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 320.00 319.69 -0.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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9. Reverse Recovery Characteristic Reference
Trj = 320(ns)
Trb= 584(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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