This document provides a SPICE model and characterization results for the Toshiba CMH05A general purpose rectifier diode. It includes: 1) The SPICE model parameters for the DCMH05A diode model. 2) Graphs comparing the simulated and measured forward voltage and capacitance characteristics. 3) Waveforms and tables showing the simulated reverse recovery time is within 5% of measured.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH05A
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: CMH05A
* MANUFACTURER: TOSHIBA
* VRRM=400, IF=1A, IFSM=10A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DCMH05A D
+ IS=165.58E-6
+ N=7.0824
+ RS=65.866E-3
+ IKF=.55393
+ CJO=13.548E-12
+ M=.34397
+ VJ=.3905
+ISR=0
+ BV=400
+ IBV=10.000E-6
+ TT=14.5000E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 1.0V 2.0V 3.0V 3.8V
I(R1)
10mA
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc
0
D1
DCMH05A

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 1.232 1.196 -2.90
0.2 1.337 1.346 0.68
0.5 1.549 1.581 2.06
1 1.787 1.809 1.24
2 2.104 2.101 -0.13
5 2.668 2.624 -1.64
10 3.187 3.206 0.59

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11503)
1.0V 10V 30V
I(V2)/(400V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
DCMH05A
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 400
0

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
1 9.200 9.219 0.21
2 7.400 7.679 3.77
5 5.650 5.910 4.61
10 4.580 4.799 4.77
20 3.720 3.892 4.63
30 3.300 3.442 4.30

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 9.20 8.7667 -4.71
0
V1TD = 13ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 11.4V
R1
50
D1
DCMH05A

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj =9.20(ns)
Trb= 6.40(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example
Measurement