The document is a device modeling report for a diode, specifically the CMH05A manufactured by Toshiba Bee Technologies Inc. It includes detailed SPICE model parameters, circuit simulation results for forward current, capacitance characteristics, and reverse recovery characteristics, demonstrating performance comparisons between measurements and simulations. Copyright information is noted throughout the document, indicating all rights reserved by the manufacturer.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: CMH05A
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: CMH05 A
* M ANUF ACTURER: TOSHIB A
* VRRM=4 00, IF=1 A, IFSM=10 A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL DCMH05A D
+ IS=165.58E-6
+ N=7.0824
+ RS=65.866E-3
+ IKF=.55393
+ CJO=13.548E-12
+ M=.34397
+ VJ=.3905
+ISR=0
+ BV=400
+ IBV=10.000E-6
+ TT=14.5000E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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4. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 1.0V 2.0V 3.0V 3.8V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DCMH05A
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 1.232 1.196 -2.90
0.2 1.337 1.346 0.68
0.5 1.549 1.581 2.06
1 1.787 1.809 1.24
2 2.104 2.101 -0.13
5 2.668 2.624 -1.64
10 3.187 3.206 0.59
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
1.0V 10V 30V
I(V2)/(400V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 400 D1
TD = 0 DCMH05A
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
1 9.200 9.219 0.21
2 7.400 7.679 3.77
5 5.650 5.910 4.61
10 4.580 4.799 4.77
20 3.720 3.892 4.63
30 3.300 3.442 4.30
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V
V2 = 11.4V
TD = 13ns V1
TR = 10ns D1
TF = 10ns DCMH05A
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 9.20 8.7667 -4.71
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =9.20(ns)
Trb= 6.40(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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