1SS250 LTspice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS250
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: 1SS250
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies
Inc. 2008
.MODEL D1SS250 D
+ IS=1.5256E-9
+ N=1.6859
+ RS=.9829
+ IKF=1.7808
+ CJO=1.1662E-12
+ M=.23519
+ VJ=9.9900
+ BV=200
+ IBV=1.0000E-6
+ TT=48.87E-9
+ ISR=0
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
1.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
D1
D1SS250

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.390 0.382 -2.05
0.00002 0.420 0.412 -1.90
0.00005 0.450 0.452 0.44
0.0001 0.480 0.483 0.63
0.0002 0.510 0.513 0.59
0.0005 0.550 0.553 0.55
0.001 0.580 0.584 0.69
0.002 0.610 0.615 0.82
0.005 0.660 0.659 -0.15
0.01 0.700 0.694 -0.86
0.02 0.740 0.734 -0.81
0.05 0.810 0.804 -0.74
0.1 0.880 0.884 0.45

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V 100V500mV
I(V2)/(200V/1u)
0
0.2p
0.4p
0.6p
0.8p
1.0p
1.2p
1.4p
1.6p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
D1SS250
0
V1
TD = 0
TF = 20ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 200
V2
0Vdc

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.5 1.250 1.237 -1.04
1 1.200 1.185 -1.25
2 1.125 1.114 -0.98
5 1.025 1.038 1.27
10 0.950 0.975 2.63
20 0.870 0.892 2.53
50 0.770 0.780 1.30
100 0.700 0.682 -2.57

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 32.80 32.52 -0.83
V1
TD = 32ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.4V
TR = 10ns
V2 = 10.7V
R1
50
0
D1
1SS250

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Measurement
Trj =32.8(ns)
Trb= 39.2(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example