This document provides a SPICE model and test data for a 1SS400 general purpose rectifier diode manufactured by ROHM. It includes: - The SPICE model parameters for the 1SS400 diode. - Graphs comparing the simulated and measured forward voltage and capacitance characteristics, showing good agreement between the two. - Measurement and simulation results for the reverse recovery time which show a 4% difference, validating the accuracy of the SPICE model.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS400
MANUFACTURER: ROHM
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
*$
* PART NUMBER: 1SS400
* MANUFACTURER: ROHM
* VRM=80,IO=100m
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL D1SS400 D
+ IS=6.5141E-9
+ N=1.9171
+ RS=1.0000E-6
+ IKF=12.751E-3
+ CJO=541.55E-15
+ M=.10579
+ VJ=9.9900
+ ISR=0
+ BV=100
+ IBV=100.00E-12
+ TT=10.293E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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D1
D1SS400
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.1V 0.3V 0.5V 0.7V 0.9V 1.1V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.362 0.364 -0.55
0.00002 0.397 0.398 -0.25
0.00005 0.441 0.443 -0.45
0.0001 0.482 0.478 0.83
0.0002 0.515 0.513 0.39
0.0005 0.561 0.559 0.36
0.001 0.597 0.594 0.50
0.002 0.628 0.630 -0.32
0.005 0.680 0.681 -0.15
0.01 0.721 0.725 -0.55
0.02 0.777 0.776 0.13
0.05 0.861 0.857 0.46
0.1 0.921 0.923 -0.22

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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D1
D1SS400
V2
0Vdc
V1
TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 80V
0
V(N11503)
5V 10V 15V2V
I(V2)/(80V/1u)
100f
1.0p
10p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
2 0.532 0.531 -0.19
3 0.527 0.527 0.00
4 0.522 0.523 0.17
5 0.518 0.519 0.19
10 0.503 0.503 0.00
15 0.492 0.491 -0.20

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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0
V1TD = 12ns
TF = 15ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 11V
R1
50
D1
D1SS400
Time
19.98us 20.00us 20.02us 20.04us 20.06us 20.08us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.40 7.70 4.04

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Measurement
Trj =7.40(ns)
Trb= 3.20 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example