This document summarizes the specifications and simulation results for a 1SS187 general purpose rectifier diode made by Toshiba. It includes the diode's SPICE model parameters, forward and reverse characteristics from circuit simulations, and comparison of simulated and measured results showing close matches. Reverse recovery time was simulated as 6.97ns compared to a measured 7ns.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS187
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
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2. SPICE MODEL
*$
* P ART NUMBER: 1SS187
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL D1SS187 D
+ IS=9.1074E-9
+ N=2.0022
+ RS=1.0000E- 6
+ IKF=29.311E-3
+ CJO=2.2105E-12
+ M=.21891
+ VJ=.42919
+ ISR=0
+ BV=80
+ IBV=500.00E-9
+ TT=10.237E-9
*$
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
1SS187
0
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5. Comparison Graph
Circuit Simulation Result
0.1
Measurement
Simulation
Forward current IF (A)
0.01
0.001
0.0001
0.00001
0 0.2 0.4 0.6 0.8 1 1.2
Forward voltage VF (V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.372 0.362 -2.57
0.00002 0.403 0.398 -1.15
0.00005 0.442 0.446 0.84
0.0001 0.476 0.482 1.21
0.0002 0.510 0.518 1.51
0.0005 0.563 0.565 0.36
0.001 0.596 0.602 0.97
0.002 0.637 0.639 0.25
0.005 0.693 0.689 -0.62
0.01 0.735 0.729 -0.82
0.02 0.780 0.773 -0.90
0.05 0.848 0.844 -0.52
0.1 0.900 0.907 0.77
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6. Capacitance Characteristic
Circuit Simulation Result
2.5p
2.0p
1.0p
0
300mV 1.0V 10V 50V
I(V2)/(80V/1u)
V(N11360)
Evaluation Circuit
V2
0Vdc
V2 = 80 V1
V1 = 0 D1
TD = 0 1SS187
TR = 1us
TF = 10ns
PW = 20us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation Result
2.5
Measurement
Simulation
Junction capacitance Ct (pF)
2
1.5
1
0.5
0
0.3 3 30
Reverse Voltage VR (V)
Simulation Result
Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.3 1.967 1.969 0.08
0.5 1.868 1.867 -0.07
1 1.697 1.699 0.11
2 1.518 1.513 -0.36
5 1.271 1.269 -0.19
10 1.089 1.100 0.99
20 0.945 0.949 0.42
50 0.787 0.779 -1.05
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.99us 20.01us 20.03us 20.05us 20.07us 20.09us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V V1
V2 = 11.1V D1
TD = 22ns 1SS187
TR = 5ns
TF = 8ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 7.00 6.97 -0.43
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =7.0(ns)
Trb= 2.4(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
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10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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