The document is a device modeling report for the bipolar junction transistor 2SC2878, detailing its parameters, characteristics, and simulation results. It includes information on saturation current, forward and reverse beta, capacitance characteristics, and switching behavior among other metrics. The report also presents a comparison of measurement and simulation results highlighting their discrepancies.

1. Device Modeling Report
COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:2SC2878
MANUFACTURER:TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. Pspice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. BJT Ic-hFE characteristics
Circuit simulation result
Evaluation circuit
Q2
Q2SC2878
6Vdc V1
I1
4mAdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.005 495.05 492.873 0.43975356
0.01 393.7 394.83 0.287020574
0.02 283.29 284.39 0.38829468
0.05 159.24 156.67 1.613916101
0.1 91.743 90.72 1.11507145
0.2 49.505 50 0.999899
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. Switching Characteristics
Circuit simulation result
Evaluation circuit
R3
Q2
4K Q2SC2878
R1
R4 R2 1K
V2 = 10
50 3K
V1 = 0 V3
TD = 1u
TR = 50n V1 V2
TF = 50n
PW = 20u
PER = 2000u -3Vdc 12Vdc
0
Simulation result
Ts(ns) Tf(ns)
Measurement Simulation Error (%) Measurement Simulation Error (%)
500 500.539 0.107 130 130.37 0.284
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

10. BJT Vce(sat) voltage Characteristics
Circuit simulation result
Evaluation circuit
I2
30mAdc
Q1
Q2SC2878
I1
3mAdc
0
Simulation result
Test condition: IC/IB = 10, IC=30mA
Vce(sat)(V)
Measurement Simulation Error(%)
100m[max] 53.47m -
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

11. Output Characteristics
Circuit simulation result
IB=60uA
IB=40uA
IB=20uA
IB=0
Evaluation circuit
Q1
Q2SC2878
10Vdc V1
I1
120uAdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004