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SPICE MODEL of 2SA1576AT106R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1577T106Q in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a transistor modeling report for a NEC 2SC4331-AZ(K) transistor. It includes:
1) A description of the PSpice model parameters for the transistor.
2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more.
3) Circuit simulations and comparisons with measurement data for characteristics like hFE-IC, VCE(sat)-IC, switching times, and the output characteristic.
The report provides a detailed characterization of the electrical behavior and performance of the transistor through measurements and PSpice simulations.
SPICE MODEL of 2SC3632-AZ in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1036KT146R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1576AT106R in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1577T106Q in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a transistor modeling report for a NEC 2SC4331-AZ(K) transistor. It includes:
1) A description of the PSpice model parameters for the transistor.
2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more.
3) Circuit simulations and comparisons with measurement data for characteristics like hFE-IC, VCE(sat)-IC, switching times, and the output characteristic.
The report provides a detailed characterization of the electrical behavior and performance of the transistor through measurements and PSpice simulations.
SPICE MODEL of 2SC3632-AZ in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SC5980-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of the 2SC5808-TL-E transistor. It includes:
1) A list of the transistor model parameters and their descriptions.
2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more from both measurement and simulation results.
3) Tables comparing measurement and simulation results for characteristics like hFE-IC, VCE(sat)-IC, and switching times.
4) Circuit diagrams used to simulate the transistor characteristics.
This document provides a summary of the modeling and characterization of the 2SA1037AKT146R transistor manufactured by ROHM. It includes:
- A description of the PSpice model parameters for the transistor.
- Graphs of various transistor characteristics like gain, capacitance, saturation voltage, and switching times as measured from circuit simulations and compared to manufacturer data.
- The evaluation circuits used to simulate and measure the transistor parameters.
SPICE MODEL of 2SC5823-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1774TLR in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SC3328(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling and characterization of the 2SC4793 transistor manufactured by Toshiba. It includes:
- A list of PSpice model parameters for the transistor.
- Graphs of measurements and simulations showing the transistor's gain, capacitance, saturation voltage, switching time and other characteristics.
- Tables comparing measurement and simulation results to validate the accuracy of the PSpice model.
SPICE MODEL of 2SC5980-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of the 2SC5808-TL-E transistor. It includes:
1) A list of the transistor model parameters and their descriptions.
2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more from both measurement and simulation results.
3) Tables comparing measurement and simulation results for characteristics like hFE-IC, VCE(sat)-IC, and switching times.
4) Circuit diagrams used to simulate the transistor characteristics.
This document provides a summary of the modeling and characterization of the 2SA1037AKT146R transistor manufactured by ROHM. It includes:
- A description of the PSpice model parameters for the transistor.
- Graphs of various transistor characteristics like gain, capacitance, saturation voltage, and switching times as measured from circuit simulations and compared to manufacturer data.
- The evaluation circuits used to simulate and measure the transistor parameters.
SPICE MODEL of 2SC5823-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SA1774TLR in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SC3328(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling and characterization of the 2SC4793 transistor manufactured by Toshiba. It includes:
- A list of PSpice model parameters for the transistor.
- Graphs of measurements and simulations showing the transistor's gain, capacitance, saturation voltage, switching time and other characteristics.
- Tables comparing measurement and simulation results to validate the accuracy of the PSpice model.
This document summarizes the modeling and characterization of the NEC 2SC3632 transistor. It includes PSpice model parameters, measurements and simulations of key transistor characteristics like gain, saturation voltage, switching times and output characteristics. Graphs compare measurement data to simulation results with good agreement. The report establishes an accurate model for representing this transistor in circuit simulations.
SPICE MODEL of 2SA1202(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the modeling of the 2SA1680 transistor from Toshiba. It includes the PSpice model parameters and their descriptions. Graphs show simulations of characteristics like reverse/forward early voltage, DC beta, capacitance, hFE vs IC, VCE saturation, VBE saturation, and switching/output characteristics. The simulations closely match experimental measurements, validating the accuracy of the transistor model.
This document summarizes the modeling and characterization of the 2SA1837 transistor from Toshiba. It includes:
- A list of the PSpice model parameters for the transistor.
- Graphs of measurements and simulations showing the transistor's reverse and forward early voltage characteristics, DC beta, capacitances, gain vs. collector current, saturation voltages and switching times.
- A circuit diagram used to simulate the output characteristics with varying base currents.
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1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: US6T7TR
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4
5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5
6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -10A
IC(X_U1.Q_Q1)/ I(U1:3)
IC(X_U1.Q_Q1)
Evaluation Circuit
U1
V1
-2V
US6T7TR
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7
15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
10M
-10m -10
ZeroCross(DB(I(U1:2)))
V_Ic
Evaluation Circuit
H1
+
-
H
0
U2
US6T7TR
Vce
U1 -2Vdc
0
F1 US6T7TR
G1
IC + I1
1m 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6 0 0
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15
16. Comparison Graph
Circuit Simulation Result
Simulation Result
FT(MHz)
-IC(A) Error(%)
Measurement Simulation
0.010 97.000 99.866 2.955
0.020 155.000 154.858 -0.092
0.050 240.000 232.954 -2.936
0.100 280.000 278.980 -0.364
0.200 305.000 300.867 -1.355
0.500 250.000 241.563 -3.375
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16