The document details the device modeling report for the transistor part number 2SC6102 manufactured by Sanyo. It includes various characteristics such as saturation currents, beta values, capacitance, and simulation results for forward and reverse parameters, including specific graphs and measurement comparisons. Additionally, it covers switching characteristics and output behavior under various conditions, accompanied by error percentages between simulation and real measurements.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6102
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
10mA 100mA 1.0A 10A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC6102
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.01 270.270 271.105 0.309
0.02 270.260 271.108 0.314
0.05 270.204 270.969 0.283
0.10 270.270 270.549 0.103
0.20 268.158 268.417 0.097
0.50 263.410 264.699 0.489
1.00 258.158 258.451 0.114
1.50 250.000 252.187 0.875
2.37 237.000 241.587 1.935
3.40 227.000 227.508 0.224
4.37 218.500 213.909 -2.101
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
1.0V
100mV
10mV
100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6102
F1
F
I1 50
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.10 0.023 0.023 -0.48
0.20 0.028 0.028 -0.34
0.50 0.043 0.043 1.18
1.00 0.066 0.067 1.98
2.00 0.107 0.109 2.15
5.00 0.225 0.221 -1.78
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6102
F1
F
I1 50
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.10 0.680 0.677 -0.39
0.20 0.705 0.699 -0.91
0.50 0.750 0.732 -2.40
1.00 0.780 0.765 -1.92
2.00 0.820 0.810 -1.22
5.00 0.910 0.903 -0.77
7.00 0.980 0.955 -2.55
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 20V
1 2
5V 10V
0V 0V
-5V -10V
>>
-10V -20V
0s 2us 4us 6us 8us 10us
1 V(L1:1) 2 V(Q1:c)
Time
Evaluation circuit
L2 RL
1 2
30nH 4.8
D1 R3
R1 L1
30.25 VCC
1 2 D1N5817 Q1
D2 R4 Q2SC6102
50 30nH
V1 = 16.25
V2 = -10 V1 12
TD = 5u R2 D1N5817 17.9
TF = 10ns 50
TR = 10ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tstg (ns) 320.000 319.058 -0.294
tf (ns) 14.000 14.278 1.986
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14. Output Characteristics
Circuit Simulation Result
5.0A
30mA 25mA
20mA
4.0A
15mA
3.0A
10mA
2.0A
5mA
1.0A
0mA
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC6102
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
30mA
25mA
20mA
15mA
10mA
5mA
0mA
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