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Organic Spintronics Zeev Valy Vardeny University of Utah; Salt Lake City
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Presently supported by the NSF-MRSEC program at the UoU (9/2011)
1. “Giant magnetoresistance in organic spin-valves”, Z. H. Xiong, D. Wu, Z. V. Vardeny, and J. Shi,  Nature  427, 821 (2004). 2. “Spin-valves of organic semiconductors; the case of Fe/Alq 3 /Co”,  F. Wang  et al .,  Synth. Metals  (2005). 3. “High-field magnetoresistance of organic light emitting diodes based on LSMO”, D. Wu, Z. H. Xiong, Z. V. Vardeny, and J. Shi,  Phys. Rev. Lett .   95 ,  016802 (2005). 4. “Spin Dynamics in Organic Spin-Valves”, F. Wang, C. G. Yang, and Z. V. Vardeny,  Phys. Rev. B  75, 245324 (2007). 5. “Organic Spintronics strikes back”, Z. V. Vardeny,  Nature Materials  2, 91 (2009). 6. “Isotope effect in magneto-transport of  π -conjugated films and devices ”,  T. D. Nguyen  et al.,  Nature Materials   9, 345 (2010). 7. “ Organic Spintronics ”, book edited by Z. V. Vardeny, Francis & Taylor, April 2010. 8. ““Magnetoconductance Response in Organic Diodes at Ultra-small Fields”,  T. D. Nguyen  et al .,  Phys. Rev. Lett .  105 , 166804 (2010).  The work presented here can be found in:
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
σ  = 10 -9  S/cm (insulator) σ  = 38 S/cm (conducting plastic) 2000 Nobel prize in Chemistry In the beginning … H. Shirakawa, A.G. MacDiarmid, and A. J. Heeger  first reported polymer conduction from oxidized (“doped”)  polyacetylene (CH) x J. Chem. Soc., Chem. Commun.  1977 , 578. Alan McDiarmid dances the Mauri’s ‘Haka’ during the ‘Nobel’ ceremony in Stockholm, 2000
Luminescence properties of DOO-PPV Singlet excitons with binding energy of about 0.5 eV are responsible for the photoluminescence band. PL quantum efficiency : ~ 30% in thin film at RT . C. X. Sheng, Ph.D. thesis, University of Utah (2005)
Organic semiconductors for light-emission Whereas the original polymer, polyacetylene is  non-luminescent , more recently  luminescent polymers  have been in the focus of the scientific study and applications. PL-quantum efficiencies up to 60% in thin films [mL-PPP]; originating from singlet excitons. Oligomers Polymers Debut of organic light emitting diodes; Tang, 1987
Advantages of ‘organic electronics’ ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Primary photoexcitations in   -conjugated polymers The 1D localization leads to considerable Coulomb correlation; thus  the photophysics is dominated by excitons . Low lying  singlet   and  triplet excitons   are separated by  ~ 0.7 eV  of exchange energy continuum Ground-state singlet triplet ~2.5eV ~1.8eV E b     0.5 eV Singlet GS triplet singlet ,[object Object],[object Object],optical absorption X Theory ; Mazumdar, Abe, Bredas Experiment ; Baessler, Friend, Vardeny
Spintronics Dictionary ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
A New  possible  device: Spin-OLED ,[object Object],Triplet excitons: no EL Singlet   luminescence ,[object Object],Only triplet excitons  (state 1 or 2) are formed; ELQE=0 Excitons in state 3 and state 4 are formed; ELQE = 50% NM 1 NM 2 Organic e h exciton FM 1 FM 2 Organic e h M 1 M 2 Parallel M FM 1 FM 2 Organic e h M 1 M 2 Anti-parallel M
Resistance mismatch problem for spin injection into semiconductors  Parallel magnetization FM1 FM1 SEC FM2 SEC FM2 FM1 FM1 SEC FM2 SEC FM2 R r R r R r r R R R R R P =     = R SC /2R M Schmidt,  Rashba , Smith; 2000-2001 SEC FM1 FM2 Large   kills MR    Is large since R sc  is large Anti-parallel magnetization R R  R/R = R R - R = P 2 /(1+  (1-P 2 )) 2 r r r r +
Solutions to the problem of spin injection into SEC  ,[object Object],2. Injector with  100% spin polarization  (half-metallic ferromagnets) 3. Ferromagnet  semiconductor  injector (higher  R  for FM1 and FM2) 4. Appropriate tunnel barrier at  interfaces  (higher  R  for Int.1 and Int.2) 5. Spin filters; such as MgO    = R sc /R electrode FM1 FM2 Int1 Int2 Semiconductor
Band structure diagram of two ferromagnets P  is the spin polarization degree at the Fermi level (%) LSMO  spin polarization is ~100% due to a large  gap between majority and minority carriers
Spintronics using inorganic semiconductors ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Does not work for OSEC; Since PL emission is from  excitons  with weak S-L coupling
Possible electrical injection/detection in organic semiconductors ,[object Object],[object Object],[object Object],R  parallel  < R  anti-parallel Thickness, d<   s H Electron spin precesses in the plane.  As  H  changes, the resistance changes, if the electrode separation is less than the spin diffusion length,   s  in the active layer. Parallel magnetization Analyzer Polarizer Anti-parallel magnetization Analyzer Polarizer
The spin-valve device ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Parallel: low R Anti-parallel: high R
 
Moodera, Myazaki (1995) Spin-valves with metallic interlayer
MRAM applications for spin valves 1MB prototype chip shown  by Motorola in June 2002 Write Mode ,[object Object],[object Object],[object Object],Isolation Transistor “  ON” Bit Line  Digit Line  Read Mode Sense Current Isolation Transistor “  OFF” Program Current H e Bit Line  Digit Line  Program Current  H h
Advantages of Organic Spintronics ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Spintronics Debut in Organics ,[object Object],[object Object],[object Object],Zero-field High field
Vertical spin-valves in our group ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],SrTiO 3 La 0.7 Sr 0.3 MnO 3 Co, Ni, or Fe Organic No nanolithography is required
Organic spin-valves fabricated in our group The spin-valve device is a vertical sandwich of LSMO/Alq 3 /Co/Al configuration Xiong; 2004 . . . . . . . . . . . . LSMO Alq 3 Co ~ 3-5nm
Differential Coercivity Bottom electrode: La 2/3 Sr 1/3 MnO 3 ; top electrode: Co ,[object Object],[object Object],Hysteresis loops from the two  electrodes measured using  MOKE
First ever organic spin-valve obtained in our research group (April 2004) ,[object Object],[object Object],[object Object],[object Object],Field (kOe) Xiong  et al .,  Nature , 2004 GMR of LSMO/Alq 3 /Co at 11K is over 12% Co LSMO
Fe/Alq 3 /Co devices; two ‘conventional’ FM electrodes Spin valve response also obtained  using Fe and Co; two “conventional” FM electrodes; but only ~ 4% F. Wang  et al ., 2005
Spin valves with small molecules and polymers have been also shown by many  other groups : Brown University, RI; Ab ö  Akademie, Finland; Bologna; Alabama, OSU, MIT, ISU, Weizmann Institute, Drezden, U. Paris, U. of London, etc. NPD: another small molecule material Spin valves with other organic materials F. Wang  et al . 2006
Alq 3  spin-valve at ‘optimum conditions’ ,[object Object],[object Object],[object Object],40% GMR value   GMR spin-valve response MOKE response of  the FM electrodes Hc 1  (LSMO)    20 Oe Hc 2  (Co)    100 Oe Nature  2004 Xiong  et al .,
1. GMR; OSEC film thickness dependence Modified spin-valve equation: spin polarization;  p 1 p 2  = 0.3
Carriers diffuse and drift within the organic layer and spin polarization decays over a distance   s ; the spin diffusion length p 1 p 2  = 0.3 d 0  = 85 nm  s  = 45 nm Spin diffusion length in organic semiconductors e E F E F Ferromagnet 1 Ferromagnet 2 Organic Interfaces
2. GMR; bias voltage dependence ,[object Object],[object Object],[object Object],[object Object]
3. GMR; temperature dependence ,[object Object],[object Object],[object Object],[object Object],[object Object],Spin-valve GMR response  (low field) vs. temperature Magnetoresistance vs. temperature The spin-valve GMR response decreases at high T, and is much steeper than M s (T) of the LSMO electrode; SL relaxation?
Alq 3  purified  α -NPD CVB Organic spin-valves at  UoU ; different OSEC materials I   and   V  are the injected current and biasing voltage across the device and  H  is the external in-plane magnetic field . OSV measurements LSMO Co/Al CVB V I H
CVB 50mV at 12K Magnetoresistance response; LSMO/CVB/Co spin-valves   Analysis using: the  modified Jullière model :  R/R = 2 P 1 P 2 D/(1 +  P 1 P 2 D); D = exp[-(d-d 0 )/  s ]   Wang, Yang, Li, & Vardeny Phys. Rev. B 75, 245324 (2007)
The MR vs. temperature in organic spin-valves   ,[object Object],[object Object],[object Object],[object Object]
Organic Spintronics strikes back Z. V. Vardeny;  Nature Materials  8 , 91, 2009 Work done: Drew  et al .,  Nature Materials   8 , 109 (2009)  Proof of spin injection into organic semiconductors; Muons spin rotation for measuring ‘local’ magnetic field
Spin diffusion length vs. temperature Drew  et al ,  Nature Materials  8 , 109 (2009) Is this the reason for the GMR temperature dependence?
Molecular Electronics with Self-Assembled Monolayers  e H LSMO Cobalt Ralph 2006; Burtman 2007
SAM spin-valve Fabrication Approach to molecular spin-valves (Burtman and Ndobe; 2006)
Spin-valves of SAM diodes; Isolated conducting molecules Single molecule spin valve with  giant TMR  of 500%  at low temperatures
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
One idea: replace proton hydrogen atoms with deuterium atoms A 0 : hyperfine coupling constant The ratio between the hyperfine constant, A 0  of proton and deuterium  is ~6.5 H H H H H H H H Hydrogenated DOO-PPV Hydrogen atoms closest to backbone carbons are the main source of HFI; nuclear spin: ½  Deuterated DOO-PPV The chemist:  Leonard Wojcik Deuterium atoms have nuclear spin: 1
Nguyen  et al.  Nature Materials 2010 Photoluminescence and Raman spectra of H- and D-polymers ,[object Object],[object Object],Raman-active vibrational modes: at ~1300 cm -1  (CH-CH stretching) at ~1500 cm -1  (CH=CH stretching)  [m(CD)/m(CH)] 1/2  1.037 “ square root of the mass ratio rule”:
Properties of electron spin resonance (ODMR)  B D  0.7 mT  B H    1.2 mT   B  depends on the hyperfine coupling constant  + wavefunction extent of the polaron on the polymer chain + inhomogeneous broadening   SL (H)/  SL (D)~4    B ( P MW ) =     B (0) [1 + (  /  SL )P MW ] 1/2    SL : spin lattice relaxation rate P MW  : MW power
GMR response of H- and D-DOO-PPV OSVs Device thickness of ~25 nm, resistance ~ 200 kOhm Applied voltage ~ 10mV Fitting formula: MR(B)= ½MR max  [1- m 1 ( B ) m 2 ( B )]exp[- d f / l s ( B ) ],  l s (0)/d f =1  for H-DOOPPV and  l s (0)/d f =3   for D-DOOPPV; ,[object Object]
Nguyen  et al.  Nature Materials  9, 345 (2010).   MR thickness dependence to determine   S MR at 80 mV and 10K Fitting function:  MR = MR  max   exp(-d/ λ S )
c Organic spin-valves using C 60  interlayer 12 C nucleus has spin  I =0; abundance 98.8%,  no HFI 13 C nucleus has spin  I =½; abundance 1.2%; some HFI F. Wang 2009 B I V LSMO C 60 Co/A l
GMR in C 60  OSVs; voltage and temperature dependencies GMR(V) is different at various T; it cannot be due to the FM electrodes Where does the voltage dependence come from? Fujian Wang; 2009
GMR in C 60  OSV; room temperature operation Fujian Wang; 2009 Very stable OSV devices; GMR up to 0.3% at RT
II.  HF magnetoresistance; field-dependent carrier injection from the LSMO electrode High-field magnetoresistance is due to magnetic field dependent carrier injection, rather than spin coherent transport One ferromagnet/organic interface PRL  2005 LSMO Alq 3 (NDP, or PFO)   Al Alq 3
MR of LSMO is caused by suppression of spin fluctuations MR of the LSMO film Substrate i LSMO H
[object Object],[object Object],N. Furukawa , J. Phy. Soc. Jpn   66 , 2523 (1997) E F  up shift   decrease of barrier height    MR Mn Mn Mn Mn Anomalous E F  Shift in LSMO E F ( H= 0) La 0.67 Sr 0.33 MnO 3 DOS     E E F ( H >0) LSMO H=0 H=7T Al 
Not seen in regular FM’s Device I-V characteristics at various  H Anomalous E F  shift in LSMO; effect on device MR 52mV LSMO H=0 H=7T AlQ 3     > 10 meV/T  B H = 0.11 meV
III.  Magnetic field dependence of Alq 3 -based OLEDs A. Room temperature, low field Magneto-electroluminescence; not related to spin injection or FM electrodes ( No FM electrodes ) Record 10% at 300K Wohlgenannt; 2006
Magnetic field dependence of Alq 3 -based OLED’s B. Low temperature High field   High-field Magneto-EL; not related to spin injection or FM electrodes
Conclusions ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

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Organic Spintronics

  • 1. Organic Spintronics Zeev Valy Vardeny University of Utah; Salt Lake City
  • 2.
  • 3. 1. “Giant magnetoresistance in organic spin-valves”, Z. H. Xiong, D. Wu, Z. V. Vardeny, and J. Shi, Nature 427, 821 (2004). 2. “Spin-valves of organic semiconductors; the case of Fe/Alq 3 /Co”, F. Wang et al ., Synth. Metals (2005). 3. “High-field magnetoresistance of organic light emitting diodes based on LSMO”, D. Wu, Z. H. Xiong, Z. V. Vardeny, and J. Shi, Phys. Rev. Lett . 95 , 016802 (2005). 4. “Spin Dynamics in Organic Spin-Valves”, F. Wang, C. G. Yang, and Z. V. Vardeny, Phys. Rev. B 75, 245324 (2007). 5. “Organic Spintronics strikes back”, Z. V. Vardeny, Nature Materials 2, 91 (2009). 6. “Isotope effect in magneto-transport of π -conjugated films and devices ”, T. D. Nguyen et al., Nature Materials 9, 345 (2010). 7. “ Organic Spintronics ”, book edited by Z. V. Vardeny, Francis & Taylor, April 2010. 8. ““Magnetoconductance Response in Organic Diodes at Ultra-small Fields”, T. D. Nguyen et al ., Phys. Rev. Lett . 105 , 166804 (2010). The work presented here can be found in:
  • 4.
  • 5. σ = 10 -9 S/cm (insulator) σ = 38 S/cm (conducting plastic) 2000 Nobel prize in Chemistry In the beginning … H. Shirakawa, A.G. MacDiarmid, and A. J. Heeger first reported polymer conduction from oxidized (“doped”) polyacetylene (CH) x J. Chem. Soc., Chem. Commun. 1977 , 578. Alan McDiarmid dances the Mauri’s ‘Haka’ during the ‘Nobel’ ceremony in Stockholm, 2000
  • 6. Luminescence properties of DOO-PPV Singlet excitons with binding energy of about 0.5 eV are responsible for the photoluminescence band. PL quantum efficiency : ~ 30% in thin film at RT . C. X. Sheng, Ph.D. thesis, University of Utah (2005)
  • 7. Organic semiconductors for light-emission Whereas the original polymer, polyacetylene is non-luminescent , more recently luminescent polymers have been in the focus of the scientific study and applications. PL-quantum efficiencies up to 60% in thin films [mL-PPP]; originating from singlet excitons. Oligomers Polymers Debut of organic light emitting diodes; Tang, 1987
  • 8.
  • 9.
  • 10.
  • 11.
  • 12. Resistance mismatch problem for spin injection into semiconductors Parallel magnetization FM1 FM1 SEC FM2 SEC FM2 FM1 FM1 SEC FM2 SEC FM2 R r R r R r r R R R R R P =  = R SC /2R M Schmidt, Rashba , Smith; 2000-2001 SEC FM1 FM2 Large  kills MR  Is large since R sc is large Anti-parallel magnetization R R  R/R = R R - R = P 2 /(1+  (1-P 2 )) 2 r r r r +
  • 13.
  • 14. Band structure diagram of two ferromagnets P is the spin polarization degree at the Fermi level (%) LSMO spin polarization is ~100% due to a large gap between majority and minority carriers
  • 15.
  • 16.
  • 17.
  • 18.  
  • 19. Moodera, Myazaki (1995) Spin-valves with metallic interlayer
  • 20.
  • 21.
  • 22.
  • 23.
  • 24. Organic spin-valves fabricated in our group The spin-valve device is a vertical sandwich of LSMO/Alq 3 /Co/Al configuration Xiong; 2004 . . . . . . . . . . . . LSMO Alq 3 Co ~ 3-5nm
  • 25.
  • 26.
  • 27. Fe/Alq 3 /Co devices; two ‘conventional’ FM electrodes Spin valve response also obtained using Fe and Co; two “conventional” FM electrodes; but only ~ 4% F. Wang et al ., 2005
  • 28. Spin valves with small molecules and polymers have been also shown by many other groups : Brown University, RI; Ab ö Akademie, Finland; Bologna; Alabama, OSU, MIT, ISU, Weizmann Institute, Drezden, U. Paris, U. of London, etc. NPD: another small molecule material Spin valves with other organic materials F. Wang et al . 2006
  • 29.
  • 30. 1. GMR; OSEC film thickness dependence Modified spin-valve equation: spin polarization; p 1 p 2 = 0.3
  • 31. Carriers diffuse and drift within the organic layer and spin polarization decays over a distance  s ; the spin diffusion length p 1 p 2 = 0.3 d 0 = 85 nm  s = 45 nm Spin diffusion length in organic semiconductors e E F E F Ferromagnet 1 Ferromagnet 2 Organic Interfaces
  • 32.
  • 33.
  • 34. Alq 3 purified α -NPD CVB Organic spin-valves at UoU ; different OSEC materials I and V are the injected current and biasing voltage across the device and H is the external in-plane magnetic field . OSV measurements LSMO Co/Al CVB V I H
  • 35. CVB 50mV at 12K Magnetoresistance response; LSMO/CVB/Co spin-valves Analysis using: the modified Jullière model :  R/R = 2 P 1 P 2 D/(1 + P 1 P 2 D); D = exp[-(d-d 0 )/  s ] Wang, Yang, Li, & Vardeny Phys. Rev. B 75, 245324 (2007)
  • 36.
  • 37. Organic Spintronics strikes back Z. V. Vardeny; Nature Materials 8 , 91, 2009 Work done: Drew et al ., Nature Materials 8 , 109 (2009) Proof of spin injection into organic semiconductors; Muons spin rotation for measuring ‘local’ magnetic field
  • 38. Spin diffusion length vs. temperature Drew et al , Nature Materials 8 , 109 (2009) Is this the reason for the GMR temperature dependence?
  • 39. Molecular Electronics with Self-Assembled Monolayers e H LSMO Cobalt Ralph 2006; Burtman 2007
  • 40. SAM spin-valve Fabrication Approach to molecular spin-valves (Burtman and Ndobe; 2006)
  • 41. Spin-valves of SAM diodes; Isolated conducting molecules Single molecule spin valve with giant TMR of 500% at low temperatures
  • 42.
  • 43. One idea: replace proton hydrogen atoms with deuterium atoms A 0 : hyperfine coupling constant The ratio between the hyperfine constant, A 0 of proton and deuterium is ~6.5 H H H H H H H H Hydrogenated DOO-PPV Hydrogen atoms closest to backbone carbons are the main source of HFI; nuclear spin: ½ Deuterated DOO-PPV The chemist: Leonard Wojcik Deuterium atoms have nuclear spin: 1
  • 44.
  • 45. Properties of electron spin resonance (ODMR)  B D  0.7 mT  B H  1.2 mT  B depends on the hyperfine coupling constant + wavefunction extent of the polaron on the polymer chain + inhomogeneous broadening  SL (H)/  SL (D)~4  B ( P MW ) =  B (0) [1 + (  /  SL )P MW ] 1/2  SL : spin lattice relaxation rate P MW : MW power
  • 46.
  • 47. Nguyen et al. Nature Materials 9, 345 (2010). MR thickness dependence to determine  S MR at 80 mV and 10K Fitting function: MR = MR max exp(-d/ λ S )
  • 48. c Organic spin-valves using C 60 interlayer 12 C nucleus has spin I =0; abundance 98.8%, no HFI 13 C nucleus has spin I =½; abundance 1.2%; some HFI F. Wang 2009 B I V LSMO C 60 Co/A l
  • 49. GMR in C 60 OSVs; voltage and temperature dependencies GMR(V) is different at various T; it cannot be due to the FM electrodes Where does the voltage dependence come from? Fujian Wang; 2009
  • 50. GMR in C 60 OSV; room temperature operation Fujian Wang; 2009 Very stable OSV devices; GMR up to 0.3% at RT
  • 51. II. HF magnetoresistance; field-dependent carrier injection from the LSMO electrode High-field magnetoresistance is due to magnetic field dependent carrier injection, rather than spin coherent transport One ferromagnet/organic interface PRL 2005 LSMO Alq 3 (NDP, or PFO) Al Alq 3
  • 52. MR of LSMO is caused by suppression of spin fluctuations MR of the LSMO film Substrate i LSMO H
  • 53.
  • 54. Not seen in regular FM’s Device I-V characteristics at various H Anomalous E F shift in LSMO; effect on device MR 52mV LSMO H=0 H=7T AlQ 3   > 10 meV/T  B H = 0.11 meV
  • 55. III. Magnetic field dependence of Alq 3 -based OLEDs A. Room temperature, low field Magneto-electroluminescence; not related to spin injection or FM electrodes ( No FM electrodes ) Record 10% at 300K Wohlgenannt; 2006
  • 56. Magnetic field dependence of Alq 3 -based OLED’s B. Low temperature High field High-field Magneto-EL; not related to spin injection or FM electrodes
  • 57.