This document summarizes research presented at IMS-2010 related to developing integrated, high performance, and customer-friendly RF and mmWave components. Key points include developing laminate and chip-scale packaging to eliminate complex assembly and reduce costs, as well as presenting data on amplifiers, mixers, and other components showing good performance from 37-44GHz. Characteristics like gain, power, efficiency, and linearity are summarized in tables for each component.

1. IMS-2010, Anaheim, CA, USA

2. To develop integrated, simple to use SMT packaged Customer friendly parts
that eliminates complex and expensive chip Assembly and related
performance degradation.
IMS-2010

3.  Laminate Package
 Chip Scale Package  High performance at frequencies from DC-mmW
 Eliminates one assembly step of die attach and wire bonding as
complete package is processed with IC.
 Virtually eliminates parasitic associated with plastic, lead frames
and bond wires & provides true air cavity
 Enables ultra-thin IC substrates to dissipate heat and whole
package is thinner than current solutions so much better for
thermal dissipation for PAs.
 Finished GaAsCap wafer can be RF probed as accurately as ‘on
wafer’ probing and so suitable for large scale manufacturing test
and does not need any PCB or custom test fixture/contactor board
for testing.
 Estimated cost is $0.10/mm2) even at mmW frequencies.
 Built to specifications, Uses Rogers 4350
material for base and lid
IMS-2010

4. x2
+20dBm
x2
4*LO=-35dBm
RF=-17dBm
NF=12dBm
IP3=+4dBm
4*LO=-25dBm
RF=-7dBm
NF=17dBm
IP3=+14dBm
4*LO=-30dBm
RF=-12dBm
NF=17.8dBm
IP3=+8.5dBm
4*LO=-20dBm
RF=-2dBm
NF=17.9dBm
IP3=+18dBm
4*LO=-25dBm
RF=-7dBm
NF=18dBm
IP3=+12dBm
4*LO=-15dBm
RF=+5dBm
NF=18dBm
IP3=+18.5dBm
4*LO=+7dBm
RF=+25dBm
NF=18dBm
IP3=+35dBm
-6to0dBm
IF=-5dBm
4*LO@RF
-35dBm
7-12GHz
37-44GHz
Transmitter Specification
Parameter Unit Specification
RF Frequency GHz 37-44
LO Frequency GHz 7.5-11.5
LO Power dBm ≤ 0
IF Frequency GHz DC-3.0
Conversion Gain dB 30
Gain Dynamic Range dB 15(min.) [>30 desired]
C/I3 dBc <29
NF dB <18 & 27 (Min./Max. Gain)
Side Band Rejection dB >15
4*LO-RF Leakage dBc <-15
IMS-2010

5. IF1
IF2
Balun
Balun
RF
LO
Parameter Unit Spec.
LO Frequency GHz 17-23
IF Frequency GHz DC-5
Conversion Gain dB 10
Gain Dynamic
Range
dB 24
NF dBm 17/23
Input IP3 dBm +7/+16
LO Power dBm 20
2*LO Leakage dBc 10
S.B. Suppression dBc 15
RL dB 10
Current (5V) mA 300
Diesize:2.65x3x0.1mm
IMS-2010

6. IMS-2010

7. -22
-18
-14
-10
-6
-2
2
6
10
14
18
40.5 41 41.5 42 42.5 43 43.5
ConversionGain(dB)
RF Frequency (GHz)
Max. G.
Min. G.
0
2
4
6
8
10
12
14
16
18
20
22
24
40.5 41 41.5 42 42.5 43 43.5
IIP3(dB)
RF Frequency (GHz)
Max. G.
Min. G.
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
24.5 26.5 28.5 30.5 32.5 34.5 36.5 38.5 40.5 42.5 44.5
C.G.(dB),OIP3(dBm)&SSBSupp.
(dBc)
RF Frequency (GHz)
C.G.
OIP3
SSB Supp.
-40
-35
-30
-25
-20
-15
-10
-5
0
40.5 41.0 41.5 42.0 42.5 43.0 43.5
Power@RF-Port(dBm)
RF Frequency (GHz)
RFout
2*LO@RF-Port
IMS-2010

8. Design
Parameters
Specifications:
Measured
Must Want
BW (GHz) 37.5 – 43.5 37 - 45 37 -44
Gain (dB) 20 22 20.5
P-1dB (dBm) 29 30 29
OIP3 [dBm]
@ 12(dBm) SCL
35 37 35
RLin (dB) 8 10 7
RLout (dB) 8 10 8
DC Power 5V, 0.8A 5V, 0.8A 5V, 0.7A
ESD 50V MM, 250HBM 50V MM, 250HBM
Block Diagram
Die size: 2.65x2x0.1mm
IMS-2010

9. 0
5
10
15
20
25
30
35
37 38 39 40 41 42 43 44
Frequency [GHz]
Gain,P-1,P-3,andPAE
Gain [dB] P1[dBm] PAE @P-1
P-3[dBm] PAE @P-3
0
5
10
15
20
25
30
35
40
45
37 38 39 40 41 42 43 44
Frequency [GHz]
OIP3[dBm]
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
IM3Level[dBc]
OIP3_L OIP3_H
IM3L(dBc) IM3H(dBc)
Frequency : 38 – 44 GHz
Gain : 20.5dB +/- 2 dB
Output Power @P-1 : 29 dBm
Psat (-3dB) : 29.5 dBm
OIP3 @Po=12dBm SCL : 35 dBm
RL(in) : -7 dB
RL(out) : -8 dB
Bias Supply : 5V, 700mA
Chip Size (mm) : 2.65 x 2 x 0.1
Measured IMD3 @ Po=+12dBm SCL
Measured Gain, S11, and S22
Measured P1, gain, and PAE
IMS-2010

10. Power Amplifier Base (°c) ICmax (°c) Vd Id (mA) P(watts) Δ (°c) θjc
S/N #4 20 57.3 5 700 3.5 37.3 10.7
Thermal Resistance
10.7 Deg C / W

11. VDD
RF 90-deg
Hybrid
In-
phase
Divider
IF
90-deg
Hybrid
IF1
IF2
External
Diplexer
Diplexer
LNA Sub-Harmonic
IRM
LO
Parameter Unit Spec.
RF Frequency GHz 37.5-43.5
LO Frequency GHz 17-23
IF Frequency GHz DC-5
Conversion Gain dB 14
Input IP3 dBm -6
LO Power dBm 15
Noise Figure dBm 4.8
Return Loss dB -10
Image Rejection dB 15
Current (3V) mA 95
Die size: 2.65x2x0.1mm
IMS-2010

12. 2
4
6
8
38 39 40 41 42 43 44
Frequency (GHz)
NoiseFigure(dB)
Vlna=3V
Vlna=3.5V
Vlna=4V
0
5
10
15
20
40 40.5 41 41.5 42 42.5 43 43.5
Frequency (GHz)
ConversionGain(dB)
Vlna=3.5V
Vlna=4V
Vlna=3V
-15
-10
-5
0
5
40 40.5 41 41.5 42 42.5 43 43.5
Frequency (GHz)
IIP3(dBm)
Vdd=3V
Vdd=3.5V
Vdd=4V
0
5
10
15
20
25
37 38 39 40 41 42 43 44
Frequency (GHz)
IRR(dB)
Vlna=3V
Vlna=4V
IMS-2010

13. F1
F2
Amp
Diff.
Active
Balun
Amp
LO/4 LO/2
Fin=10.5GHz
-10
-5
0
5
10
15
20
25
-8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0
Input Power (dBm)
Pout[1H,2H,3H,4H](dBm)
1H
2H
3H
4H
Fin=11.5 GHz
-10
-5
0
5
10
15
20
25
-8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0
Input Power (dBm)
Pout[1H,2H,3H,4H](dBm)
1H
2H
3H
4H
IMS-2010

14. -0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
25 30 35 40
Frequency (GHz)
S21(dB)
1.0mm x 0.5mm x 0.1mm
IMS-2010

15. Parameter Unit x2
Up-
Converter
Power
Amp
Detector Down Converter
Pout (2H) dBm +21 n/a n/a n/a n/a
Gain dB n/a 11 20 -0.75 15
Gain control dB n/a 24 n/a n/a n/a
LO Power dBm n/a +20 n/a n/a +15
2x LO Leakage dBc n/a 15 n/a n/a n/a
Return Loss dB n/a -10 -10 -15 -10
OIP3 dBm n/a +22 +38 +50 +10
P-1dB dBm n/a +15 +30 +40 +5
Image Rejection dB n/a 15 n/a n/a `5
Fundamental Supp. dBc 20 n/a n/a n/a n/a
3rd Harmonic Supp. dBc 20 n/a n/a n/a n/a
4th Harmonic Supp. dBc 20 n/a n/a n/a n/a
Voltage V 5 5 5 1.8 3
Current mA 210 300 700 1 70
IMS-2010