1) The document describes the design and simulation of a linear amplifier that operates in the C band frequency range of 5-6 GHz.
2) A Class A amplifier design approach was used to ensure linearity at higher frequencies. A GaAs FET transistor was selected and biased in its linear region.
3) Input and output matching networks were designed using S-parameter simulations. Multiple transistor stages were cascaded to increase the gain to 30 dB.
4) Simulation results showed a gain of 19.241 dB, S-parameters, stability above 1, and a noise figure of around 3 dB as expected for a low noise pre-amplifier.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Design and Analysis of CMOS Instrumentation AmplifierIJEEE
This paper presents the design and analysis of CMOS Instrumentation Amplifier in terms of gainas a performance metric. CMOSInstrumentation Amplifier has been designed using three Operational Amplifiers. Two basic op-amps have been used at the input stage and the output stage have been analysed for three different configurations. These configurations are: basic op-amp, body bias op-amp and folded cascode op-amp. A comparison has been drawn for all the three configurations.Most of the previous work has been done usingthe same type of op-amp at both the input and output stages of instrumentation amplifier. To obtain the desirableGain, focus has been laid upon transistor sizing for designing. The design models have been implemented using Cadence Virtuoso Analog Design Suite in 0.18µm CMOS technology.The simulations have been analysed in detail. A significant gain improvement has been observed in the circuit design with body bias and folded cascode as compared to the basic cascade design.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Design and Analysis of CMOS Instrumentation AmplifierIJEEE
This paper presents the design and analysis of CMOS Instrumentation Amplifier in terms of gainas a performance metric. CMOSInstrumentation Amplifier has been designed using three Operational Amplifiers. Two basic op-amps have been used at the input stage and the output stage have been analysed for three different configurations. These configurations are: basic op-amp, body bias op-amp and folded cascode op-amp. A comparison has been drawn for all the three configurations.Most of the previous work has been done usingthe same type of op-amp at both the input and output stages of instrumentation amplifier. To obtain the desirableGain, focus has been laid upon transistor sizing for designing. The design models have been implemented using Cadence Virtuoso Analog Design Suite in 0.18µm CMOS technology.The simulations have been analysed in detail. A significant gain improvement has been observed in the circuit design with body bias and folded cascode as compared to the basic cascade design.
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
Review on Design and Performance Analysis of Low Power Transceiver Circuit in...iosrjce
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
Wideband power amplifier based on Wilkinson power divider for s-band satellit...journalBEEI
This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)<-10dB, gain (S21)>10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K>1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
Design of Low Power High Speed 4-Bit TIQ Based CMOS Flash ADCAman JanGra
The analog-to-digital converter (ADC) is an essential part of systemon-
chip (SoC) products because it bridges the gap between the analog physical
world and the digital logical world. In the digital domain, low power and low
voltage requirements are becoming more important issues as the channel length
of MOSFET shrinks below 0.25 sub-micron values. SoC trends force ADCs to
be integrated on the chip with other digital circuits. These trends present new
challenges in ADC circuit design. This paper investigates high speed, low
power, and low voltage CMOS flash ADCs for SoC applications.
Abstract:
This paper reports on the design of an ultra wideband power amplifier using 0.25um GaN- HEMT Technology device obtained from the Triquint Semiconductor. There is huge interest in transistors based on Gallium Nitride in recent years due to its high breakdown voltage and its capability to operate in High frequency applications. The load pull analysis is carried out to obtain both the required source and load impedances. The
power amplifier with over 10W output power and 42% power added efficiency in the frequency range of 3-5GHz is presented in this paper. The PA is designed using a computer aided design tool called Advanced System Design (ADS).ADS provide two different simulation opportunities. These are referred as schematic simulation and
electromagnetic simulation called Momentum. Schematic Simulations are performed on the proposed PA in this paper.
Keywords:- GaN-HEMT Technology, Load pull analysis, Advanced system design(ADS)
Design of a 45nm TIQ Comparator for High Speed and Low Power 4-Bit Flash ADCIDES Editor
The continued speed improvement of serial links
and appearance of new communication technologies, such as
ultra-wideband (UWB), have introduced increasing demands
on the speed and power specifications of high-speed low-tomedium
resolution analog-to-digital converters (ADCs).This
paper presents the design of high speed and ultra low power
comparator of a 4-bit ADC. The comparator used is Threshold
Inverter Quantization (TIQ) consuming less than 145μW power
with the input frequency of 1GHz and is designed using
standard CMOS (Complementary Metal Oxide
Semiconductor) technology. The power supply voltage is 0.7V
minimum which makes this design adaptable to wide variety
of System-on-Chip (SoC) applications. The complete design of
ADC is clockless which reduces the electromagnetic
interference and gives better modularity. The ADC is targeted
for 45nm as it was the mainstream CMOS technology, at the
beginning of this research. However, the circuit should be
portable to smaller feature size CMOS technologies with lower
supply voltages.
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADSKarthik Rathinavel
• Systematically designed a LNA and its biasing using non-ideal components such as Microstrip TLs resistors, capacitors etc.
• Calculated the S parameters of the Transistor and simulated the gain and bandwidth to be 10 dB and 1 GHz respectively.
• Achieved a Noise Figure of 3.2 dB and s11 of -20 dB in the final design.
International Journal of Engineering Research and DevelopmentIJERD Editor
Electrical, Electronics and Computer Engineering,
Information Engineering and Technology,
Mechanical, Industrial and Manufacturing Engineering,
Automation and Mechatronics Engineering,
Material and Chemical Engineering,
Civil and Architecture Engineering,
Biotechnology and Bio Engineering,
Environmental Engineering,
Petroleum and Mining Engineering,
Marine and Agriculture engineering,
Aerospace Engineering.
A 10 d bm 25 dbm, 0.363 mm2 two stage 130 nm rf cmos power amplifierVLSICS Design
This paper proposes a 2.4 GHz RF CMOS Power amplifi
er and variation in its main performance
parameters i.e, output power, S-parameters and powe
r added efficiency with respect to change in supply
voltage and size of the power stage transistor. The
supply voltage was varied form 1 V to 5 V and the
range
of output power at 1dB compression point was found
to be from 10.684 dBm to 25.08 dBm respectively.
The range of PAE is 16.65 % to 48.46 %. The width o
f the power stage transistor was varied from 150 μm
to 500 μm to achieve output power of range 15.47 dB
m to 20.338 dBm. The range of PAE obtained here is
29.085 % to 45.439 %. The total dimension of the la
yout comes out to be 0.714 * 0.508 mm
2
.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
Wireless communication system are developing rapidly, due to which new standards like WIMAX and 4G Long Term Evaluating(LTE) with a purpose of achieving high data rate result in high end applications such as high speed internet, video conferences and broadband width. These applications require mobile base stations at the transmitter as well as at receiver (T/R) to support features like multiple bands, multiple modes, higher BW and less power consumption. The design and implementation of multi-standard transceivers for wireless mobile system is very complex task. In this paper we discuss the design of a wider band Doherty Amplifier, which operational frequency of 3 GHz to 3.75 GHz.
This paper gives a step-by-step of the design, simulation and measurement of a Power Amplifier(PA) operating frequency from 2.5GHz to 4.5GHz. The design of Class A Power amplifier was performed in Agilent ADS and the performance was tested with SZA3044Z BJT
Design of 10 to 12 GHz Low Noise Amplifier for Ultrawideband (UWB) SystemIJECEIAES
Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and highgain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
Review on Design and Performance Analysis of Low Power Transceiver Circuit in...iosrjce
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
Wideband power amplifier based on Wilkinson power divider for s-band satellit...journalBEEI
This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)<-10dB, gain (S21)>10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K>1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.
Design of Low Power High Speed 4-Bit TIQ Based CMOS Flash ADCAman JanGra
The analog-to-digital converter (ADC) is an essential part of systemon-
chip (SoC) products because it bridges the gap between the analog physical
world and the digital logical world. In the digital domain, low power and low
voltage requirements are becoming more important issues as the channel length
of MOSFET shrinks below 0.25 sub-micron values. SoC trends force ADCs to
be integrated on the chip with other digital circuits. These trends present new
challenges in ADC circuit design. This paper investigates high speed, low
power, and low voltage CMOS flash ADCs for SoC applications.
Abstract:
This paper reports on the design of an ultra wideband power amplifier using 0.25um GaN- HEMT Technology device obtained from the Triquint Semiconductor. There is huge interest in transistors based on Gallium Nitride in recent years due to its high breakdown voltage and its capability to operate in High frequency applications. The load pull analysis is carried out to obtain both the required source and load impedances. The
power amplifier with over 10W output power and 42% power added efficiency in the frequency range of 3-5GHz is presented in this paper. The PA is designed using a computer aided design tool called Advanced System Design (ADS).ADS provide two different simulation opportunities. These are referred as schematic simulation and
electromagnetic simulation called Momentum. Schematic Simulations are performed on the proposed PA in this paper.
Keywords:- GaN-HEMT Technology, Load pull analysis, Advanced system design(ADS)
Design of a 45nm TIQ Comparator for High Speed and Low Power 4-Bit Flash ADCIDES Editor
The continued speed improvement of serial links
and appearance of new communication technologies, such as
ultra-wideband (UWB), have introduced increasing demands
on the speed and power specifications of high-speed low-tomedium
resolution analog-to-digital converters (ADCs).This
paper presents the design of high speed and ultra low power
comparator of a 4-bit ADC. The comparator used is Threshold
Inverter Quantization (TIQ) consuming less than 145μW power
with the input frequency of 1GHz and is designed using
standard CMOS (Complementary Metal Oxide
Semiconductor) technology. The power supply voltage is 0.7V
minimum which makes this design adaptable to wide variety
of System-on-Chip (SoC) applications. The complete design of
ADC is clockless which reduces the electromagnetic
interference and gives better modularity. The ADC is targeted
for 45nm as it was the mainstream CMOS technology, at the
beginning of this research. However, the circuit should be
portable to smaller feature size CMOS technologies with lower
supply voltages.
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADSKarthik Rathinavel
• Systematically designed a LNA and its biasing using non-ideal components such as Microstrip TLs resistors, capacitors etc.
• Calculated the S parameters of the Transistor and simulated the gain and bandwidth to be 10 dB and 1 GHz respectively.
• Achieved a Noise Figure of 3.2 dB and s11 of -20 dB in the final design.
International Journal of Engineering Research and DevelopmentIJERD Editor
Electrical, Electronics and Computer Engineering,
Information Engineering and Technology,
Mechanical, Industrial and Manufacturing Engineering,
Automation and Mechatronics Engineering,
Material and Chemical Engineering,
Civil and Architecture Engineering,
Biotechnology and Bio Engineering,
Environmental Engineering,
Petroleum and Mining Engineering,
Marine and Agriculture engineering,
Aerospace Engineering.
A 10 d bm 25 dbm, 0.363 mm2 two stage 130 nm rf cmos power amplifierVLSICS Design
This paper proposes a 2.4 GHz RF CMOS Power amplifi
er and variation in its main performance
parameters i.e, output power, S-parameters and powe
r added efficiency with respect to change in supply
voltage and size of the power stage transistor. The
supply voltage was varied form 1 V to 5 V and the
range
of output power at 1dB compression point was found
to be from 10.684 dBm to 25.08 dBm respectively.
The range of PAE is 16.65 % to 48.46 %. The width o
f the power stage transistor was varied from 150 μm
to 500 μm to achieve output power of range 15.47 dB
m to 20.338 dBm. The range of PAE obtained here is
29.085 % to 45.439 %. The total dimension of the la
yout comes out to be 0.714 * 0.508 mm
2
.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
Wireless communication system are developing rapidly, due to which new standards like WIMAX and 4G Long Term Evaluating(LTE) with a purpose of achieving high data rate result in high end applications such as high speed internet, video conferences and broadband width. These applications require mobile base stations at the transmitter as well as at receiver (T/R) to support features like multiple bands, multiple modes, higher BW and less power consumption. The design and implementation of multi-standard transceivers for wireless mobile system is very complex task. In this paper we discuss the design of a wider band Doherty Amplifier, which operational frequency of 3 GHz to 3.75 GHz.
This paper gives a step-by-step of the design, simulation and measurement of a Power Amplifier(PA) operating frequency from 2.5GHz to 4.5GHz. The design of Class A Power amplifier was performed in Agilent ADS and the performance was tested with SZA3044Z BJT
Design and Fabrication of S-Band MIC Power Amplifierijcisjournal
In this paper, we demonstrate an approach to design FET (pHEMT) based amplifier. The FET is from
Berex Inc.The design is carried out using the measured S-parameter data of the FET.ADS is used as design
tool for the design. A single-stage power amplifier demonstrated 13dB output gain from 3GHz-4GHz .The
saturated output power of 1W and the power added efficiency (PAE) up to 43%.The amplifier is fabricated
on a selective device GaAs power pHEMT process in MIC (Microwave Integrated Circuit) Technology.
MICs are realized using one or more different forms of transmission lines, all characterized by their ability
to be printed on a dielectric substrate.Active and passive components such as transistors/FET, thin or thick
film chip capacitors and resistors are attached
Sigma-Delta Analog-to-Digital converter (ADC), is widely used in portable electronic products. An operational
transconductance amplifier (OTA) is one of the most important components of ADC. This paper presents a
new design of two stages OTA. The design incorporates Sleep insertion technique and leakage feedback current
approach for improving design parameters such as gain, and power as compared to earlier work. The design is
simulated in 0.18µm CMOS technology with supply voltage 1.8V.
Design and Implementation of a Low Noise Amplifier for Ultra Wideband Applica...IOSRJVSP
This paper represents the design and implementation of Low Noise Amplifier for Ultra wideband application using 0.18μm CMOS Technology. The proposed two stage LNA is for a 3-5 GHz. At supply voltage of 1.8V, for the exceed limit of 50μm of width of each transistor, the power consumption is 7.22mW. Noise figure is 4.33dB, Maximum power gain i.e. S21 is 20.4dB, S12 < -20dB, S11 < -8dB, S22 < -10dB. For the required bandwidth range, LNA is unconditionally stable and have good linearity
A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for ...TELKOMNIKA JOURNAL
RF/microwave power amplifier (PA) is one of the components that has a large effect on the
overall performance of communication system especially in transmitter system and their design is decided
by the parameters of transistor selected. This letter presents a new concept of a wide-band microwave
amplifier using scattering parameters that is often used in the radio frequency communication systemas an
application of the active integrated antenna[1- 2]. This power amplifier operates from 1.75 GHz to 2.15GHz
frequency and it is based on AT-41410 NPN transistor that has a high transition frequency of 10GHz. The
proposed Single Stage PA is designed by microstrip technology and simulated with Advanced Design
System (ADS) software. The simulation results indicate good performances; the small power gain (S21) is
changed between 11.8 and 10dB. For the input reflection coefficient (S11) is varied between -11 and -
22.5dB. Regarding the output reflection coefficient (S22) is varied between -13.1 and -18.7dB over the
wide frequency band of 1.75-2.15GHz and stability without oscillating over a wide range of frequencies.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired
Low Power SI Class E Power Amplifier and Rf Switch for Health Careieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
DESIGN AND ANALYSIS OF 2 GHz 130nm CMOS CASCODE LOW NOISE AMPLIFIER WITH INTE...csijjournal
This work, illustrates the development of 2 GHz Low Noise Amplifier (LNA) interfaced with square truncated edge-fed right circularly polarized patch antenna. The LNA is simulated on Agilent ADS platform with TSMC 130nm RF CMOS process. The development of cascode amplifier and its optimization has been further exemplified. The developed LNA is tuned for 2 GHz and the performance is tuned for high stability factor of 4, Gain of 19 dB which is essential for any mobile device, Noise Figure (NF) of 1.15 dB with a P1dB point at -9 dBm. Further a truncated patch antenna with right circular polarization has been simulated on EMpro. The antenna has a gain of 6.1 dB in the azimuth plane. The simulated system can be further integrated to form the RF front end of TDD2000 LTE standard mobile device.
Review on 75 305 Ghz Power Amplifier MMIC with 10 14.9 dBm Pout in a 35 nm In...ijtsrd
The broadband power amplifier monolithic microwave ICs with an operating frequency of more than 200 GHz is demonstrated. It is fabricated in a 35 nm gate length metamorphic high electron mobility transistor. The power amplifier produces a minimum output power of 10 dBm with an average value of 12.8 dBm at 75 to 305 GHz. A peak output power of 14.9 dBm and power added efficiency of 6.6 is obtained at 200 GHz. Padmam Kaimal "Review on 75-305 Ghz Power Amplifier MMIC with 10-14.9 dBm Pout in a 35-nm InGaAs mHEMT Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-6 | Issue-2 , February 2022, URL: https://www.ijtsrd.com/papers/ijtsrd49251.pdf Paper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
What will you get from this session?
1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
Topics covered:
Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Let's dive deeper into the world of ODC! Ricardo Alves (OutSystems) will join us to tell all about the new Data Fabric. After that, Sezen de Bruijn (OutSystems) will get into the details on how to best design a sturdy architecture within ODC.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
The Art of the Pitch: WordPress Relationships and SalesLaura Byrne
Clients don’t know what they don’t know. What web solutions are right for them? How does WordPress come into the picture? How do you make sure you understand scope and timeline? What do you do if sometime changes?
All these questions and more will be explored as we talk about matching clients’ needs with what your agency offers without pulling teeth or pulling your hair out. Practical tips, and strategies for successful relationship building that leads to closing the deal.
Transcript: Selling digital books in 2024: Insights from industry leaders - T...BookNet Canada
The publishing industry has been selling digital audiobooks and ebooks for over a decade and has found its groove. What’s changed? What has stayed the same? Where do we go from here? Join a group of leading sales peers from across the industry for a conversation about the lessons learned since the popularization of digital books, best practices, digital book supply chain management, and more.
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E05322730
1. IOSR Journal of Engineering (IOSRJEN) www.iosrjen.org
ISSN (e): 2250-3021, ISSN (p): 2278-8719
Vol. 05, Issue 03 (March. 2015), ||V2|| PP 27-30
International organization of Scientific Research 27 | P a g e
Design and Simulation of a Linear Amplifier in C Band
MahimaVuppuluri, NishanthShyam Sunder and Dr. K Sreelakshmi,
RV College of Engineering, Department of Telecommunication
Abstract: -Though there exists a variety of amplifier specifications for various purposes, most of the amplifiers
are designed to work in a lower frequency band, and those that work in higher frequencies are optimized for
higher efficiency and not for linearity. This paper describes the approach to design and simulate a Class A small
signal Linear Amplifier that works in C Band. The bias network, matching network and the cascaded amplifier
stages of the system are designed and simulated. The simulation yields the values of the S parameters and the
resulting gain. The system is expected to provide a gain of 30dB and work in a frequency range of 5-6 GHz of
the C band.
Index Terms: - C Band, Linear Amplifier, S parameters
I. INTRODUCTION
One of the most basic concepts in microwave circuit design is amplification. In the past microwave
tubes and microwave diodes (based in negative resistance region) were commonly used; However, nowadays
use of microwave transistors (BJT or FET) has become very popular.
Transistor amplifiers are built rugged and are reliable for low power to medium power applications. We
consider the design of linear small-signal pre-amplifier which works in C band. The design method used is
based on the S parameters of the transistor, which forms the heart of the amplifier circuit.
An amplifier is used to increase the amplitude of a signal waveform, without changing other parameters of the
waveform such as frequency or wave shape. They are one of the most commonly used circuits in electronics and
perform a variety of functions in a great many electronic systems.
Radio Frequency amplifiers are tuned in which the frequency of operation is governed by a tuned circuit. This
circuit may or may not, be adjustable depending on the purpose of the amplifier. Bandwidth also depends on use
and may be relatively wide, or narrow. Input resistance is generally low, as is gain. (Some RF amplifiers have
little or no gain at all but are primarily a buffer between a receiving antenna and later circuitry to prevent any
high level unwanted signals from the receiver circuits reaching the antenna, where it could be re-transmitted as
interference). A special feature of RF amplifiers where they are used in the earliest stages of a receiver is low
noise performance. It is important that background noise generally produced by any electronic device, is kept to
a minimum because the amplifier will be handling very low amplitude signals from the antenna (µV or smaller).
For this reason it is common to see low noise FET transistors used in these stages.
II. RELATED WORK
RF Amplifiers are widely used analog building blocks in most electronic circuits. Some of the existing
designs studied include the design, simulation and fabrication process.
RF amplifiers function very differently from other amplifiers. In a large-signal power amplifier, nonlinear
effects are very strong because transistor parameters depend on many factors. In this research the authors have
designed two stage microwave power amplifier having the operation frequency 2.4 GHz ISM Band to achieve
the gain of +10~12dB and output power of 0.5 Watt (27dBm) within the size of 2.5x2.5 inch. They chose to
work with ATF50189, which is a packaged AlGaAs/InGaAs FET [1].
A discrete 2-stage L-band low noise amplifier is designed. The amplifier is centred at 1.25 GHz with a noise
figure (NF) less than 0.17 dB over a band width of 200 MHz.GaAs HEMT‟s offer low noise figure compared to
MESFET‟s and silicon FET‟s. So, Agilent HEMT‟s are used in the 1st and 2nd stage respectively to obtain a
overall noise figure less than 0.17 dB and gain more than 22dB. Amplifier is designed using ADS[2].
A three-stage monolithic microwave integrated circuit (MMIC) power amplifier from 6–18 GHz, which
achieves high output power with excellent efficiency, is designed, fabricated and tested. Measured results show
that the saturated output power and the small signal gain are about 32 dB and 23 dB, respectively. Thus, the
power added efficiency of about 28% indicates that it is useful in various communication systems [3].
A 13.5GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band
wireless receiver. From measurement, the peak gain is 25dB with the power consumption was 140mW with a
supply voltage of 1.1V. As a result, the performance characteristics required to realize a low-power front-end
amplifier for a D-band wireless receiver were obtained[4].
It is concluded that most of the amplifiers are designed to work at lower frequencies and those that work at
2. Design and Simulation of a Linear Amplifier in C Band
International organization of Scientific Research 28 | P a g e
higher frequencies are generally optimized for efficiency and power gain and not linearity. The most obvious
and simple way to ensure a high degree of linearity at higher frequencies is to design a class A small signal
transistor amplifier.
III. DESIGN
The amplifier to be designed is a pre-amplifier with pre-defined specification. The design procedure involves
the selection of a transistor, construction of the input and output matching networks, designing of the cascaded
stages and verification of the design by testing various parameters of the transistor. The design process uses S
parameters to characterize the transistor.
A. The Simulation Tool
The software design tool chosen for simulation is Agilent Technologies'Advanced Design System [5]. ADS
provides a vast array of simulation modes and models. For design of high speed digital circuits, the most useful
simulation tools will be DC and transient analysis. Whether to use ADS or HSPICE is a matter of individual
preference. Since ADS is oriented toward microwave applications, it is found that it contains a much larger
library of transmission line and passive component models that include non idealities of these components.
When dealing with high speed interconnections, this might provide the incentive to learn to use ADS over
HSPICE user. On the other hand, ADS has yet to handle transistor model libraries in a convenient manner.
B. The Transistor
We have chosen for the design is FLC057WG. The FLC057WG is a power GaAs FET that is designed for
general purpose applications in the C-band frequency range as it provides superior power, gain, and efficiency.
The range of frequencies that form the operating range of the amplifier is 5-6 GHz, which is the working
frequency range of the chosen transistor. The Id-Vds characteristics of the transistor are observed and for the
purpose of biasing the middle of the active region is chosen so that the characteristic of the amplifier are linear.
The middle of the active region corresponds to voltage levels of Vgs=-1 V and Vds= 5 V. The bias levels are
added to the circuit to complete the design.
The datasheet of the chosen transistor is downloaded to get information about the transistor. The datasheet of the
transistor briefly lists down the features, description, Voltage Power and Temperature ratings, along with the
electrical characteristics. The current vs voltage characteristics are also a part of the datasheet. The transistor
libraries are available for download in ADS.
C. The Design Procedure
The first step is to design an input and output matching circuit. The transistor is attached to terminal loads on the
input and output side as shown in the figure. The S parameter simulation icon is inserted into the schematic.
This is the basic way to start the design to find out the S parameters of the device. The circuit consists of an FET
working between (0.10-10.00 GHz) and two terminal loads attached on either ends. Once the above circuit is
simulated the S parameters (dB) and the smith chart is plotted. Markers are placed at the required 5 GHz point.
The corresponding S11 and S22 are observed. The impedance value of Zofor S11 is calculated and will be used.
Then a Smith Chart Utility is created. Keeping the source impendence Zs* constant (corresponding to the
terminal load) and changing ZL. to correspond to the transistor, we get two points on the impedance and
admittance circle of the smith chart. We use the admittance or the impedance circles to match the two points till
we get a suitable network response and note down the circuit appearing on the Network Schematic. Construct
the input matching circuit from the Network Schematic. A combination of Series L and Shunt C is used Note
down values of the capacitor and inductor and Simulate. Simulated results of input matching are obtained and
we get a gain > -10dB on the db vs frequency plot. The gain is insufficient and the matching is inefficient. The
circuit is shown in Figure 1.
Fig. 1. Transistor with input and output matching circuits
Therefore, to increase the gain, the gate thickness must be increased by cascading amplifiers. The design
procedure from the design of the input and output matching circuits is repeated for the new transistor stage
3. Design and Simulation of a Linear Amplifier in C Band
International organization of Scientific Research 29 | P a g e
consisting of 2 FETs. A bias network is then with Vgs=-1 V and Vds=5V. These values are obtained from the
datasheet of the transistor. Since we are biasing our transistor is linear and thus a corresponding value is checked
in the active region. The forward gain obtained is around 20 dB. The obtained design and simulation results are
shown in Figure 2 and Figure 3. The circuit shows better stability and matching that the circuit simulated earlier.
Fig. 2. Schematic with biasing circuit
The stability factor (K) is also measured and plotted „K‟ for the simulated circuit using the software. „StabFact‟
is added to the schematic in order to plot the stability factor. This would help in quantitatively determining how
stable the circuit is at the mentioned frequency. The transient response of the system is observed and verified by
plotting the transient current and voltage across the device.Finally the noise figure of the circuit is plotted and its
variation with respect to frequency is analyzed. For this purpose a noise source is added at the input terminal
and the circuit is simulated.
IV. RESULTS
The simulation yields the values of the S parameters and with a two stage amplifier we obtain the gain as 19.241
dB
S11= -19.662dB = 0.104∠165.568
S22= -19.478dB = 0.004∠139.658
S12= 48.157dB = 9.163∠ -136.342
S21= 19.241dB = 0.106∠ -48.86
Stability factor=13.673
These are shown in Figure 3.
Figure 3: Results of simulation
The plot for stability factor shows that the stability peaks at the given frequency of 5GHz. The transient
response as shown in Figure 4 shows the linear characteristic of the transistor as well as the amplification
generated by the circuit. The noise analysis shows the noise figure around 3 dB, which is as expected is a low
noise pre-amplifier. The plot obtained is shown in Figure 5.
Fig. 4. Results of transient simulation
4. Design and Simulation of a Linear Amplifier in C Band
International organization of Scientific Research 30 | P a g e
Fig. 5. Result of noise analysis.
V. CONCLUSION
In this work our focus was to obtain a gain of 30dB, a noise figure of less than 3dB, a stability factor of
greater than 1 and to compare it with the simulated results. The gain can be increased by cascading multiple
staged with suitable matching circuits. The noise figure was obtained to be around 3dB. The stability factors
indicate that the circuit is stable within the said frequency range.
The future scope of the project involves attempting to increase the forward gain by cascading amplifier stages.
Fabrication of the simulated design and the subsequent testing also can be done.
VI. ACKNOWLEDGMENT
This work was supported by the guidelines of the curriculum set by R.V. College of Engineering, Bangalore.
We take this opportunity to express our profound gratitude and deep regards to our professors and Head of the
Department for their exemplary guidance, monitoring and constant encouragement throughout the course of this
project.
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