This document provides an overview of trade-offs in designing E-band transceiver monolithic microwave integrated circuits (MMICs) for gigabit wireless links. It discusses SiGe and GaAs semiconductor technologies that can be used for transmitter and receiver designs. Measured results are presented for SiGe-based transmitters showing output power, gain, and noise performance. Package options for E-band systems are also reviewed. The document concludes with a summary of how GaAs and SiGe technologies can be combined to achieve high performance while controlling costs for E-band transceiver designs.
Using Distortion Shaping Technique to Equalize ADC THD Performance Between ATEsPete Sarson, PH.D
This paper describes how using a phase switching technique can produce a low distortion signal from an Arbitrary Waveform Generator (AWG), and how this technique aligns the performance of the AWGs between testers, to evaluate the Total Harmonic Distortion (THD) performance of Analogue-to-Digital Converters (ADCs). Once a device has been characterized and correlated to the bench, the test engineer needs to start the release procedure in getting the device into a production ready state. One major issue that a test engineer faces is the difference in ADC THD performance test results using the same Automated Test Equipment (ATE) manufacture testers (AWGs). This paper will then show how the Gauge Repeatability and Reproducibility (GRR) between testers can be produced more easily allowing less stringent guard-bands to guarantee the performance of those devices that have performance criteria close to the device specification. This work will also go some way to proving previous papers’ works on distortion shaping testing to enhance the spectral performance of Arbitrary Waveform Generators.
A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier Leveraging the Cross-Coup...aiclab
Cross-coupled pairs are certainly among the most widely adopted fundamental circuits still in use today. This elegant device arrangement yields broadband positive feedback with high gain and low power, desirable features both in analog and digital applications [1]. Its small signal properties are consistently leveraged in oscillators, impedance negators and to boost gain of transconductors, while the bistable behavior is exploited in static latches and memory cells. Traditionally, the regeneration capability is leveraged in the design of sense amplifiers and high-speed comparators. In this work, we investigated the performance of the cross-coupled pair for discrete-time linear amplification and we show that its regeneration feature proves to be attractive for implementing Programmable-Gain Amplifiers (PGAs).
Using Distortion Shaping Technique to Equalize ADC THD Performance Between ATEsPete Sarson, PH.D
This paper describes how using a phase switching technique can produce a low distortion signal from an Arbitrary Waveform Generator (AWG), and how this technique aligns the performance of the AWGs between testers, to evaluate the Total Harmonic Distortion (THD) performance of Analogue-to-Digital Converters (ADCs). Once a device has been characterized and correlated to the bench, the test engineer needs to start the release procedure in getting the device into a production ready state. One major issue that a test engineer faces is the difference in ADC THD performance test results using the same Automated Test Equipment (ATE) manufacture testers (AWGs). This paper will then show how the Gauge Repeatability and Reproducibility (GRR) between testers can be produced more easily allowing less stringent guard-bands to guarantee the performance of those devices that have performance criteria close to the device specification. This work will also go some way to proving previous papers’ works on distortion shaping testing to enhance the spectral performance of Arbitrary Waveform Generators.
A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier Leveraging the Cross-Coup...aiclab
Cross-coupled pairs are certainly among the most widely adopted fundamental circuits still in use today. This elegant device arrangement yields broadband positive feedback with high gain and low power, desirable features both in analog and digital applications [1]. Its small signal properties are consistently leveraged in oscillators, impedance negators and to boost gain of transconductors, while the bistable behavior is exploited in static latches and memory cells. Traditionally, the regeneration capability is leveraged in the design of sense amplifiers and high-speed comparators. In this work, we investigated the performance of the cross-coupled pair for discrete-time linear amplification and we show that its regeneration feature proves to be attractive for implementing Programmable-Gain Amplifiers (PGAs).
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Design and simulation result of various spiral antennas.
Spiral antennas belong to the class of "frequency independent" antennas; these antennas are characterized as having a very large bandwidth. Spiral antennas are travelling wave structures and are well-known for their wideband performance. A bandwidth of 5:1 or 10:1 is easily obtained and a stable input impedance is achieved through a self-complementary geometry. This wideband characteristic of the spiral antenna makes it an attractive choice where a single antenna is required to send / receive over multiple channels. Spiral antennas are usually circularly polarized. The spiral antenna's radiation pattern typically has a peak radiation direction perpendicular to the plane of the spiral (broadside radiation). The Half-Power Beamwidth (HPBW) is approximately 70-90 degrees.
Spiral antennas are widely used in the defense industry for sensing applications, where very wideband antennas that do not take up much space are needed. Spiral antenna arrays are used in military aircraft in the 1-18 GHz range. Other applications of spiral antennas include GPS, where it is advantageous to have RHCP (right hand circularly polarized) antennas.
There are several kind of spiral antennas . An Archimedean spiral made of two equal lengths of coaxial cable seems to be the easiest circularly polarized antenna to make that'll cover a broad range.
Presentation by Steve Condra, Senior Director, Engineering and Product Management for Teleste Intercept. SCTE® LiveLearning for Professionals Webinar™ Series: Swimming Upstream: How to Boost Upstream Network Capacity, February 17th 2022
Techniques and Challenges in Designing Wideband Power Amplifiers Using GaN an...NXP Admin
At EDI CON USA 2016, Jeff Ho from NXP presented a workshop on the benefits and challenges in designing wideband power amplifiers using GaN and LDMOS technologies. Click through to explore the great potential of wideband power amplifier designs due to excellent power and efficiency characteristics at RF and microwave frequencies.
Techniques and Challenges in Designing Wideband Power Amplifiers Using GaN an...Lisa Bradley
At EDI CON USA 2016, Jeff Ho from NXP presented a workshop on the benefits and challenges in designing wideband power amplifiers using GaN and LDMOS technologies. Click through to explore the great potential of wideband power amplifier designs due to excellent power and efficiency characteristics at RF and microwave frequencies.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Design and simulation result of various spiral antennas.
Spiral antennas belong to the class of "frequency independent" antennas; these antennas are characterized as having a very large bandwidth. Spiral antennas are travelling wave structures and are well-known for their wideband performance. A bandwidth of 5:1 or 10:1 is easily obtained and a stable input impedance is achieved through a self-complementary geometry. This wideband characteristic of the spiral antenna makes it an attractive choice where a single antenna is required to send / receive over multiple channels. Spiral antennas are usually circularly polarized. The spiral antenna's radiation pattern typically has a peak radiation direction perpendicular to the plane of the spiral (broadside radiation). The Half-Power Beamwidth (HPBW) is approximately 70-90 degrees.
Spiral antennas are widely used in the defense industry for sensing applications, where very wideband antennas that do not take up much space are needed. Spiral antenna arrays are used in military aircraft in the 1-18 GHz range. Other applications of spiral antennas include GPS, where it is advantageous to have RHCP (right hand circularly polarized) antennas.
There are several kind of spiral antennas . An Archimedean spiral made of two equal lengths of coaxial cable seems to be the easiest circularly polarized antenna to make that'll cover a broad range.
Presentation by Steve Condra, Senior Director, Engineering and Product Management for Teleste Intercept. SCTE® LiveLearning for Professionals Webinar™ Series: Swimming Upstream: How to Boost Upstream Network Capacity, February 17th 2022
Techniques and Challenges in Designing Wideband Power Amplifiers Using GaN an...NXP Admin
At EDI CON USA 2016, Jeff Ho from NXP presented a workshop on the benefits and challenges in designing wideband power amplifiers using GaN and LDMOS technologies. Click through to explore the great potential of wideband power amplifier designs due to excellent power and efficiency characteristics at RF and microwave frequencies.
Techniques and Challenges in Designing Wideband Power Amplifiers Using GaN an...Lisa Bradley
At EDI CON USA 2016, Jeff Ho from NXP presented a workshop on the benefits and challenges in designing wideband power amplifiers using GaN and LDMOS technologies. Click through to explore the great potential of wideband power amplifier designs due to excellent power and efficiency characteristics at RF and microwave frequencies.
CMOS Analog IC design by Dr GS Javed - Refresher Course - Batch 1Javed G S, PhD
Topics covered in the course
1. DC Biasing of the circuits
2. Circuits for reference voltage and current generation
-Voltage Regulator
-BGR
-LDO
-V-to-I
3. Precision Current References
4. Opamp design for Analog to digital converters
- OTA
- Buffer
- Unity Feedback OTA
- Layout design strategies – 2stage opamp + CMFB
5. Sense and Return mechanisms in Feedback circuits
- Current and Voltage circuits
6. Sub-Threshold Conduction
- Low voltage Operation
7. ADC Design and Simulation
-Near Nyquist performance of Opamp for ADC Circuits
-Spectral Analysis and No. of FFT Points for simulation
-Simulation time for performance
-Resistors – their variation and Calibration
-Switch design for S/H
-CDAC
8. On-Chip Inductors
Design of a low-power compact CMOS variable gain amplifier for modern RF rece...journalBEEI
The demand for portability has speeded up the design of low-power electronic communication devices. Variable gain amplifier (VGA) is one of the most vulnerable elements of every modern receiver for the proper baseband processing of the signal. CMOS VGAs are generally suffered from low bandwidth and small gain range. In this research, a two-stage class AB VGA, each stage comprising of a direct transconductance amplifier and a linear transimpedance amplifier, is designed in Silterra 0.13-μm CMOS utilizing Mentor Graphics environment. The post-layout simulation results reveal that the VGA design achieves the widest bandwidth of >200 MHz and high gain range from -33 to 32 dB. The VGA dissipates only 2mW from a single 1.2 V DC supply. The core chip area of the VGA is also only 0.026 mm2 which is also the lowest compared to recent researches. Such a VGA will be a very useful module for all modern communication devices.
Presentazione Futurology 10-40-100 GBEthernet tratta dal seminario internazionale Helping you to build a better networks conclusosi lo scorso luglio a LISBONA Portogallo
Cambium epmp force 200 2.4 & 5 ghz spec sheet - info tech middle eastAli Shoaee
Cambium Network ePMP Force 200 adds a subscriber module and point-to-point (PTP) radio to ePMP’s 2.4 & 5 GHz line of products. Designed to operate in high interference environments and provides superior throughput of over 200 Mbps of real user data.
Stay Connected
Keep up on our always evolving product features and technology.
https://youtu.be/5wZJK4ToS7s
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A 10-BIT 25 MS/S PIPELINED ADC USING 1.5-BIT SWITCHED CAPACITANCE BASED MDAC ...IAEME Publication
The primary motivation of the work presented in this paper is to significantly reduce power consumption in pipe lined ADCs using Switched Capacitance based MDAC with Opamp Sharing configuration. ADC power reduction enables longer battery life in mobile applications, and lower cost packaging in wired applications.For conventional ADCs differential amplifiers dominate the power dissipation in most high-speed analog to digital conversion applications. This work presents a 9 stage, 10-bit Pipe lined ADC with Error Correction Algorithm which achieves the dynamic power consumption of 138.38 mW for 25 MS/s sampling rate at a 1.8V supply voltage in GPDK 180nm CMOS. All the sub-blocks to generate top level Pipe lined ADC have been designed in Cadence environment and simulated to output parameters in Cadence Spectre and MATLAB. Designed ADC achieves 63.17 dB SFDR, INL of 0.35 LSB and DNL of 0.5 LSB.
A DC-6 GHz, Packaged 100 Watt GaN SPDT Switch MMIC
IMS2016_Workshop_SK 03232016
1. Workshop_WMH
Trade-offs in the Design of E-
band Transceiver MMICs for
Gigabit Wireless Link
Application
Sushil Kumar
130 Baytech Dr, San Jose, CA, USA
10. Workshop_WMH
• Pin Total=-23dBm
• Pout_Tot=13dBm (Pout/tone=10dBm)
• L in eu p Gain = 3 6 d B
• TX Noise=-112dBm/Hz
• OIP3 total= 24.0dBm
SiGe Based Tx Architecture
Lineup (RF Chain) Analysis
Max. Gain (SiGe) = 36dB GaAs PA Gain = 16dB
Lineup Max. Gain ~ 50dB
11. Workshop_WMH
Spectral Mask vs Tx Noise & IM3
of a SiGe Based Architecture
64QAM 500 MHz plot image (86 GHz)
64QAM 500 MHz plot image (83.5 GHz)
12. Workshop_WMH
GaAs Based Tx Architecture
Note : Not to the scale
Differential
Diplexer
Differential
Diplexer
Direct Conversion
Architecture
14. Workshop_WMH
Key RF Components of Tx
RF Chain : Differential IQ Modulator + Env. Detector + VVA + VGA
LO Chain : Frequency Tripler + Buffer Amp + Filter + Frequency Doubler +
Saturated Amplifier + BPF
15. Workshop_WMH
Integrated Power Detector
Single Ended LO port
Designed to meet technical specifications of ETSI document ETSI EN 302 217‐2‐2.
SIP Key Parameters Unit Low Band High Band
Frequency Range GHz 71.0 – 76.0 81.0 – 86.0
LO Frequency GHz 11.8 – 12.7 13.5 – 14.4
Baseband Bandwidth GHz > 2 GHz > 2 GHz
Max Conversion Gain dB 25.0 25.0
OIP3 dBm 27.0 27.0
Psat dBm 22.0 22.0
Carrier Rejection dBc >30 >30
Image Rejection dB >35 >35
Gain Control Dynamic Range dB >35 >35
Key Performance of RF
Chain of GaAs Tx (1/4)
20. Workshop_WMH
fin
fOut= 6* fin
LO Chain Lineup
Performance
LO Chain (Output)
fin=12.67GHz, Pin=+2dBmLO Chain (Input)
fout=76.0GHz (6H), Fundamental + other
harmonics & Spurs well suppressed.
Above two screen shots covers 10MHz-80GHz signal from LO Chain
21. Workshop_WMH
Key RF Components of Rx
RF Chain : LNA (GaAs) + VGA + RF Mixer + BB Mixer + BB Circuit
LO Chain : Multiplexer + Frequency Doubler + Buffer Amp + Quadrupler
+ Frequency Divider
22. Workshop_WMH
Single Ended LO port
Integrated SPI
Designed to meet technical specifications of ETSI document ETSI EN 302 217‐2‐2.
SIP Key Parameters Unit Low Band High Band
Frequency Range GHz 71.0-76.0 81.0 – 86.0
LO Frequency GHz 7.88-8.44 9.0 – 9.6
IF Frequency GHz 7.88-8.44 9.0 – 9.6
Input Dynamic Range dBm -85 to -23 -85 to -23
Max Conversion Gain dB 60.0 60.0
IIP3 @ Min Gain dBm -7.0 -7.0
Noise Figure @max gain dB 7.0 7.0
Analog Gain Control dB >80 >80
Key Performance of
Receiver (1/2)
28. 28
• Success at E-band and above will rely on
technologies that provide increased
performance and higher levels of integration
• WIN’s next generation technologies will
address both market needs
Performance
– Ft above 180 GHz
– Hot Via eliminates bond wires and enables
wafer scale packaging
Integration
– 4-metal back end, front side ground plane
– Monolithic schottky or PIN diodes
– Standard E/D logic gates
– Now with monolithic PN diodes for compact ESD
protection
Beyond PP10: Enabling New Functions
And Higher Integration
BS
via
4mil GaAs substrate
Au/Sn Eutectic
Isolated BS metal
Hot
Via
RF Isolated Through Wafer Via
29. Workshop_WMH
Why GaN
High Breakdown Field
10x of Si or GaAs
High Power Density
2-10x of Si or GaAs
Good Thermal Conductivity
Higher Impedances
Best Power Device Figure of Merit
Low Dielectric Constant
Lower Intrinsic Capacitances
JFM = Johnson's figure of merit is a measure of suitability of a semiconductor material
for high frequency power transistor applications and requirements
JFM=(Breakdown, electron velocity product) [Eb*Vbr/2π]
Highest Johnson Figure of Merit
Si=1.0, GaAs=2.7, SiC=20,
GaN=27.5
30. Workshop_WMH
GaN (SiC vs Si)
GaN Operating range ~200 to 200o
C
SiC has higher thermal conductivity, so
better heat management therefore
higher efficiency
Key Parameters GaN on SiC GaN on Si
Thermal Conductivity 3.7 W/Cm C 1.5 W/Cm C
Die Size (for similar design) small
15-20% bigger compared to SiC for thermal
management
Cost High Low (very low on 8” or 12” Si in future).
Volume Low High
Wafer Size 3” to 6” 3” (up to 8 or 12”, possible in future)
T(°C) = T(K) - 273.15
Thermal conductivity of GaAs is much lower (0.43 W/cmK) compared to Si and SiC, so the GaAs based device channel
temperature is high. If operated at high channel temperature MTTF of GaAs based power circuit would be poor)
31. Workshop_WMH
Technology Advantages for a
given Circuit for E-band Transceiver
Process GaAs (pHEMT) SiGe BiCMOS
Mixer
Active
OK gain, Poor 1/f noise,
Complex design
Best suited, 1/f noise good for HBT
Poor 1/f Noise for MOSFET based
design
Passive
Best IP3, High CL and LO
Drive Level
Moderate IP3, CL and much higher
LO drive compared to Gilbert cell
based topology
Low Noise Amplifier Lower NF and High IP3
compared to SiGe
Moderate NF, IP3, similar gain
compared to GaAs
Gain Blocks Both are good. SiGe would be smaller in dimension
Power Amplifier Much higher P1dB & IP3 Moderate Power & IP3, similar gain
compared to GaAs
VVA/Switch GaAs has slight advantage Si CMOS is very comparable to GaAs
Freq. Multipliers Either can be used unless Pout requirement is very high
32. Workshop_WMH
Technology Advantages for a
given Circuit for E-band Transceiver
Process GaAs (pHEMT) SiGe BiCMOS
VCO
InGaP (not GaAs) based VCO has best in
class close in Phase Noise. A VCO in
combination with GaAs multiplier
provides best E-band close in phase Noise
Close in Phase Noise not
comparable to InGaP
based VCO
Passives (Baluns,
90o Hybrids)
GaAs has some performance advantage,
slightly lower loss, a little better balance
for hybrid
A little lossy but Very
comparable
Passive
(µstrip/CPW
Lines/Spiral)
GaAs offer wide range impedance but has
size disadvantage. It has larger dimension
for same aspect ratio (W/H, H=50um)
TxL Geometries are much
smaller due to TFMS.
Limited Impedance range
& low Q
Level of Integration Limited Best
Logic Circuits Limited (GaAs Foundries are integrating E/D logic FETs now) Best
Other consideration : Bias Supply, Ground Via, ESD etc.
33. Workshop_WMH
Summary
GaAs and SiGe based Tx/Rx architecture were discussed
and results were shown
GaAs based Direct Conversion Architecture suits best to
meet tough spec of IM3 and Tx Noise with higher
modulation with BW≥500MHz.
GaAs LNA and SiGe Rx combination results best for SNR
and IM3
It is best to combine GaAs and SiGe as and where spec
demands to keep the performance high and cost low.
Various E-Band Package options were also discussed
34. Workshop_WMH
Acknowledgements
Author is thankful to all Team members, especially to Andrea Betti-Berutto
(CTO) for his guidance and design support. Shawn Parker for his outstanding
designs. Neir Chen, Yunzhou, Linda for their tireless effort to provide best
possible test, software development and board designs. James Little, Jeff
Illinger, Jack Kennedy, Chris Saints for IC design and layout support. Steve
Chaote, Matin Vagues, Ratan Chaudhary for their Op & Qual support. Phuong
Vo and Hoa Ho for all their assembly work.
Special thanks to Avi Katz (CEO), Raluca Dinu (EVP), for their constant
encouragement.