1. Diluted magnetic semiconductors aim to integrate semiconductor processing and ferromagnetic data storage on a single chip. Magnetic semiconductors are classes of materials that exhibit both semiconducting and magnetic properties.
2. The lecture discusses the theoretical picture of magnetic impurities in semiconductors based on the Zener model and mean-field theory. It also covers disorder, transport properties, and the anomalous Hall effect in diluted magnetic semiconductors.
3. The final sections discuss magnetic properties in the presence of disorder and recent developments, as well as open questions for the future of magnetic semiconductors.
Magnetic semiconductors: classes of materials, basic properties, central ques...ABDERRAHMANE REGGAD
This document discusses magnetic semiconductors and their properties. It covers:
1) Concentrated magnetic semiconductors like chromium chalcogenides and europium chalcogenides which are ferromagnetic due to kinetic exchange and Coulomb interactions between localized magnetic moments.
2) Diluted magnetic semiconductors (DMS) where magnetic ions substitute into semiconductor hosts, including II-VI, oxide, and III-V semiconductors. Many DMS show carrier-mediated ferromagnetism driven by holes.
3) Key open questions about the mechanism of ferromagnetism, the nature of carrier states, and the origin of metal-insulator transitions and resistivity maxima observed
This presentation introduces two-dimensional materials like graphene. It defines two-dimensional materials as being only one or two atoms thick and able to conduct electrons freely within their plane. The document discusses how graphene, being a single layer of graphite, is the strongest material yet and can efficiently conduct heat and electricity. It notes graphene's potential applications in electronics, solar cells, and biomedicine. In conclusion, two-dimensional materials like graphene are seen as having great potential for developing new nanoelectronics, optoelectronics, and flexible devices.
The concept, application of Giant Magneto Resistance is being discussed in the slides
The discovery of this phenomenon has caused vast developments in the field of spintronics
Giant magnetoresistance (GMR) is a quantum effect observed in thin film structures with alternating ferromagnetic and nonmagnetic layers that can control electrical resistance at the nanoscale using magnetic fields. It was discovered in the late 1980s by Peter Grunberg and Albert Fert working independently, for which they received the Nobel Prize. GMR results from electron spin and magnetic moments, causing more or less scattering depending on whether the magnetic moments are parallel or antiparallel. This effect is observed at the nanoscale where the electron mean free path is greater than the interlayer separation. Main applications of GMR include magnetic field sensors for hard drives, biosensors, and MRAM as it allows control of electrical resistance with magnetic fields
Heterostructures, HBTs and Thyristors : Exploring the "different"Shuvan Prashant
The document discusses heterostructures, heterojunction bipolar transistors (HBTs), and thyristors. It begins by explaining homojunctions and heterojuctions, how they differ in material composition and resulting energy band structures. It then describes HBTs, noting they can achieve higher speeds than bipolar junction transistors (BJTs) due to reduced injection of minority carriers into the emitter. Finally, it discusses thyristors, four-layer pnpn semiconductor devices that can operate in either conducting or blocking states, and diacs, bidirectional thyristor variants used in alternating current switching applications.
This document provides an introduction to giant magnetoresistance (GMR), including its discovery in the late 1980s and commercial applications in hard disk drives. GMR is observed in thin film structures with alternating ferromagnetic and nonmagnetic layers, where resistance decreases significantly (typically 10-80%) in the presence of a magnetic field. The effect is explained using a model where resistance is lower when magnetic moments of ferromagnetic layers are parallel versus antiparallel. The document describes different types of structures that exhibit GMR, including magnetic multilayers, spin valves, pseudo-spin valves, and granular thin films.
Semiconductors have electrical properties between conductors and insulators. They behave as insulators at low temperatures but conduct electricity at room temperature due to their small band gap. Doping semiconductors with impurities creates an excess of electrons or holes, making them n-type or p-type. A p-n junction is formed at the boundary between p-type and n-type semiconductors and allows current to flow in only one direction, making it useful for diodes. Diodes are used to convert alternating current to direct current and have many applications in electronics.
This document discusses spintronics, which uses the spin of electrons rather than just their charge. Spintronic devices could offer higher speeds, lower power consumption, and new functionalities compared to conventional electronics. Spintronics relies on magnetic materials and the spin states of electrons. One example is giant magnetoresistance (GMR), where the resistance depends on the spin configuration of adjacent magnetic layers. Potential applications include spin-polarized field effect transistors and magnetic random access memory (MRAM), which could provide non-volatile memory with faster speeds and lower costs than existing technologies. Overall, spintronics may lead to new devices and quantum computing approaches that significantly advance information technology.
Magnetic semiconductors: classes of materials, basic properties, central ques...ABDERRAHMANE REGGAD
This document discusses magnetic semiconductors and their properties. It covers:
1) Concentrated magnetic semiconductors like chromium chalcogenides and europium chalcogenides which are ferromagnetic due to kinetic exchange and Coulomb interactions between localized magnetic moments.
2) Diluted magnetic semiconductors (DMS) where magnetic ions substitute into semiconductor hosts, including II-VI, oxide, and III-V semiconductors. Many DMS show carrier-mediated ferromagnetism driven by holes.
3) Key open questions about the mechanism of ferromagnetism, the nature of carrier states, and the origin of metal-insulator transitions and resistivity maxima observed
This presentation introduces two-dimensional materials like graphene. It defines two-dimensional materials as being only one or two atoms thick and able to conduct electrons freely within their plane. The document discusses how graphene, being a single layer of graphite, is the strongest material yet and can efficiently conduct heat and electricity. It notes graphene's potential applications in electronics, solar cells, and biomedicine. In conclusion, two-dimensional materials like graphene are seen as having great potential for developing new nanoelectronics, optoelectronics, and flexible devices.
The concept, application of Giant Magneto Resistance is being discussed in the slides
The discovery of this phenomenon has caused vast developments in the field of spintronics
Giant magnetoresistance (GMR) is a quantum effect observed in thin film structures with alternating ferromagnetic and nonmagnetic layers that can control electrical resistance at the nanoscale using magnetic fields. It was discovered in the late 1980s by Peter Grunberg and Albert Fert working independently, for which they received the Nobel Prize. GMR results from electron spin and magnetic moments, causing more or less scattering depending on whether the magnetic moments are parallel or antiparallel. This effect is observed at the nanoscale where the electron mean free path is greater than the interlayer separation. Main applications of GMR include magnetic field sensors for hard drives, biosensors, and MRAM as it allows control of electrical resistance with magnetic fields
Heterostructures, HBTs and Thyristors : Exploring the "different"Shuvan Prashant
The document discusses heterostructures, heterojunction bipolar transistors (HBTs), and thyristors. It begins by explaining homojunctions and heterojuctions, how they differ in material composition and resulting energy band structures. It then describes HBTs, noting they can achieve higher speeds than bipolar junction transistors (BJTs) due to reduced injection of minority carriers into the emitter. Finally, it discusses thyristors, four-layer pnpn semiconductor devices that can operate in either conducting or blocking states, and diacs, bidirectional thyristor variants used in alternating current switching applications.
This document provides an introduction to giant magnetoresistance (GMR), including its discovery in the late 1980s and commercial applications in hard disk drives. GMR is observed in thin film structures with alternating ferromagnetic and nonmagnetic layers, where resistance decreases significantly (typically 10-80%) in the presence of a magnetic field. The effect is explained using a model where resistance is lower when magnetic moments of ferromagnetic layers are parallel versus antiparallel. The document describes different types of structures that exhibit GMR, including magnetic multilayers, spin valves, pseudo-spin valves, and granular thin films.
Semiconductors have electrical properties between conductors and insulators. They behave as insulators at low temperatures but conduct electricity at room temperature due to their small band gap. Doping semiconductors with impurities creates an excess of electrons or holes, making them n-type or p-type. A p-n junction is formed at the boundary between p-type and n-type semiconductors and allows current to flow in only one direction, making it useful for diodes. Diodes are used to convert alternating current to direct current and have many applications in electronics.
This document discusses spintronics, which uses the spin of electrons rather than just their charge. Spintronic devices could offer higher speeds, lower power consumption, and new functionalities compared to conventional electronics. Spintronics relies on magnetic materials and the spin states of electrons. One example is giant magnetoresistance (GMR), where the resistance depends on the spin configuration of adjacent magnetic layers. Potential applications include spin-polarized field effect transistors and magnetic random access memory (MRAM), which could provide non-volatile memory with faster speeds and lower costs than existing technologies. Overall, spintronics may lead to new devices and quantum computing approaches that significantly advance information technology.
Ferroelectric and piezoelectric materialsZaahir Salam
The document discusses piezoelectric and ferroelectric materials. It defines key terms like dielectric, polarization, and piezoelectric effect. It explains that piezoelectric materials can convert mechanical energy to electrical energy and vice versa. Ferroelectric materials are a special class of piezoelectric materials that exhibit spontaneous polarization without an electric field. Examples of naturally occurring and man-made piezoelectric crystals and ceramics are provided. Common applications of piezoelectric materials include sensors, actuators, generators, and memory devices.
The document provides an overview of the electronic band structure of solids from both the Sommerfeld and Bloch perspectives. It discusses key concepts such as:
1) Quantum numbers that label the eigenenergies and eigenfunctions of the Hamiltonian.
2) Bloch's theorem which describes the wavefunction of an electron as a plane wave modulated by a periodic function with the periodicity of the crystal lattice.
3) The band structure and energy levels that arise from Bloch's treatment, which has no simple explicit form unlike Sommerfeld's free electron model.
4) Key differences between the Sommerfeld and Bloch approaches regarding concepts like the density of states, Fermi surface, and wavefunctions
This document provides an overview of thin film deposition methods and thin film characterization techniques. It discusses the objectives of the course, which are to provide an understanding of thin film deposition methods, their capabilities and limitations. Hands-on demonstrations and experiments will help participants understand each deposition method and stimulate discussion. The document then summarizes various thin film deposition techniques like evaporation, sputtering, chemical vapor deposition, their principles and examples of applications. It also summarizes various characterization techniques used to analyze thin films and determine properties like composition, structure, thickness and defects.
This document discusses semiconductors and their properties. It explains that semiconductors have electrical conductivity between conductors and insulators. Their valence and conduction bands are almost full and empty respectively, with a small energy gap that allows electrons to cross over with a smaller electric field compared to insulators. Common semiconductors like silicon and germanium form covalent bonds and have crystalline structures. Doping semiconductors with impurities can create an excess or shortage of electrons, making them either n-type or p-type semiconductors respectively.
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice
The name ‘graphene’ comes from graphite + -ene = graphene
This document discusses giant magnetoresistance and its applications. It begins with a history of magnetoresistance discovery in 1857. It then covers ferro magnetic materials, spintronics concepts like spin dependent conduction. It describes giant magnetoresistance using schematics of magnetic multilayers and the first evidence of GMR. Applications discussed include spin valves used in hard drive read heads, MRAM for data storage, and spin transistors. Future areas of research mentioned are magnetic switching transistors, next-gen low power MRAM, and integrating spintronics with semiconductors.
This document discusses spintronics, which uses electron spin rather than charge to store and transmit information. It describes giant magnetoresistance (GMR) and how controlling electron spin can enable lower power devices like MRAM and spin transistors. These spintronic devices could combine data storage, processing and communication on a single chip. While promising faster speeds and denser integration, challenges remain in controlling spin over long distances and integrating spintronic techniques with semiconductor technology.
Spintronics utilizes the spin property of electrons to carry information. It offers advantages over traditional electronics like lower power consumption and greater density. Key developments include the giant magnetoresistance effect, spin transistors, and magnetic random access memory (MRAM). Continued research aims to better inject, manipulate, and detect electron spin in semiconductors for applications in memory and logic devices.
The document discusses ion-beam lithography, which uses a focused beam of ions instead of electrons or photons to pattern surfaces. Ion-beam lithography offers higher resolution than other lithography techniques due to ions having higher momentum and less scattering. It can define patterns through physical sputtering, chemical reactions with precursor gases, or ion implantation. While having advantages like high resolution and minimal proximity effects, it also has lower throughput and can damage substrates more than other lithography methods. The document provides details on ion sources, lithography processes, advantages and disadvantages of the technique.
The document discusses various types of nano devices and their operation. It describes resonant tunneling diode (RTD) which consists of a double barrier structure and exhibits peaks and valleys in current as electron energy passes quantum bound states. Resonant tunneling transistor (RTT) controls large current using small gate voltage. A single-electron transistor (SET) switches current using single electron charge on its gate. Other devices discussed include fin-shaped field-effect transistor (FinFET) and nanowire field-effect transistor (nanowire FET) which have better control of the channel using their 3D gate structure. Nano devices are used in various fields including medical, military and agriculture.
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
Rahul Raghvendra's seminar discussed molybdenum disulfide (MoS2), a 2D semiconductor material that can potentially replace silicon. MoS2 has desirable properties such as a tunable bandgap, high mobility, flexibility and transparency. The seminar covered MoS2's atomic structure, electrical properties, fabrication methods and applications in sensors, memory devices and flexible electronics. Challenges include controlling the number of MoS2 monolayers deposited and developing devices compatible with plastic substrates.
ALD is a thin film deposition technique based on self-terminating surface reactions of gas precursors. It involves alternating exposure of a substrate to different precursors separated by purge steps, resulting in one atomic layer of film growth per cycle. ALD provides highly conformal and uniform coatings with atomic-level thickness control due to its self-limiting growth mechanism. It is widely used for depositing oxides, nitrides and some metals in applications such as semiconductors, coatings, MEMS and solar cells.
h-BN has potential as an ideal dielectric material for 2D electronics. As a gate dielectric, h-BN provides improved carrier mobility and resists dielectric breakdown at high electric fields. When used as a substrate, h-BN enhances graphene conductivity and mobility while improving reliability by facilitating better heat dissipation than conventional dielectrics like SiO2. Overall, h-BN shows promise as an ubiquitous dielectric that can fulfill critical roles in 2D heterostructures and devices.
Ellipsometry- non destructive measuring methodViji Vijitha
Ellipsometry is a non-destructive optical technique that measures the change in polarization state of light upon reflection from or transmission through a sample. It can be used to characterize properties like thickness, composition, and crystallinity of thin films. The document discusses the history and principles of ellipsometry, experimental setups, data analysis techniques using modeling to extract sample properties, and applications in measuring films. Modeling involves using equations to describe light-material interactions and minimizing errors between calculated and measured polarization states.
The document discusses how 2D materials can advance energy storage and discusses several research projects utilizing 2D materials for lithium and sodium-ion batteries. It summarizes that integrating selected 2D lithium host materials into 3D architectures can improve electrochemical performance through increased surface area and diffusion pathways. Composite 2D-3D microstructures incorporating graphene offer multiple functional enhancements for energy storage systems. There is a need to explore advanced manufacturing methods for nanostructured materials.
This theory, developed by Bardeen, Cooper and Schrieffer, states that electrons experience an attractive interaction through the lattice that overcomes their normal repulsive interaction, forming Cooper pairs. At low temperatures, these pairs move without resistance through the lattice, causing the material to become a superconductor. The electron-lattice-electron interaction must be stronger than the direct electron-electron interaction for superconductivity to occur.
A presentation on Molecular Beam Epitaxy made by Deepak Rajput. It was presented as a course requirement at the University of Tennessee Space Institute in Fall 2008.
For free download Subscribe to https://www.youtube.com/channel/UCTfiZ8qwZ_8_vTjxeCB037w and Follow https://www.instagram.com/fitrit_2405/ then please contact +91-9045839849 over WhatsApp.
Graphene Presentation
A ppt compiled by Yaseen Aziz Wani pursuing M.Sc Chemistry at University of Kashmir, J&K, India and Naveed Bashir Dar, a student of electrical engg. at NIT Srinagar.
Warm regards to Munnazir Bashir also for providing us with refreshing tea while we were compiling ppt.
Synthesis, spectroscopic, magnetic properties and superoxide dismutase (SOD) ...IOSR Journals
Three new ternary copper(II) complexes formulated as [Cu(HIda)(bipy)] 1; [Cu(HIda)(phen)] 2; [Cu(HIda)(dmp)] 3; where HIda =N-(2-hydroxyethyl)-2- iminodiacetic acid ; bipy = 2, 2’- bipyridine; phen = 1,10- phenanthroline; dmp = 2,9-dimethyl 1,10-phenanthroline, have been synthesized and characterized by partial elemental analysis, FAB-mass (m/z), EPR, UV-visible and CV measurements. The magnetic and spectroscopic data of all these complexes 1-3 indicate distorted octahedral geometry. The EPR spectra of these complexes in frozen DMSO solutions showed a single at g ca. 2. The trend in g-value (g||>g>2.0023) suggests that the unpaired electron on copper (II) has dx2–y2 character. The SOD activities of the complexes have been investigated. Antibacterial and antifungal activity of these complexes were also measured and discussed.
Ferroelectric and piezoelectric materialsZaahir Salam
The document discusses piezoelectric and ferroelectric materials. It defines key terms like dielectric, polarization, and piezoelectric effect. It explains that piezoelectric materials can convert mechanical energy to electrical energy and vice versa. Ferroelectric materials are a special class of piezoelectric materials that exhibit spontaneous polarization without an electric field. Examples of naturally occurring and man-made piezoelectric crystals and ceramics are provided. Common applications of piezoelectric materials include sensors, actuators, generators, and memory devices.
The document provides an overview of the electronic band structure of solids from both the Sommerfeld and Bloch perspectives. It discusses key concepts such as:
1) Quantum numbers that label the eigenenergies and eigenfunctions of the Hamiltonian.
2) Bloch's theorem which describes the wavefunction of an electron as a plane wave modulated by a periodic function with the periodicity of the crystal lattice.
3) The band structure and energy levels that arise from Bloch's treatment, which has no simple explicit form unlike Sommerfeld's free electron model.
4) Key differences between the Sommerfeld and Bloch approaches regarding concepts like the density of states, Fermi surface, and wavefunctions
This document provides an overview of thin film deposition methods and thin film characterization techniques. It discusses the objectives of the course, which are to provide an understanding of thin film deposition methods, their capabilities and limitations. Hands-on demonstrations and experiments will help participants understand each deposition method and stimulate discussion. The document then summarizes various thin film deposition techniques like evaporation, sputtering, chemical vapor deposition, their principles and examples of applications. It also summarizes various characterization techniques used to analyze thin films and determine properties like composition, structure, thickness and defects.
This document discusses semiconductors and their properties. It explains that semiconductors have electrical conductivity between conductors and insulators. Their valence and conduction bands are almost full and empty respectively, with a small energy gap that allows electrons to cross over with a smaller electric field compared to insulators. Common semiconductors like silicon and germanium form covalent bonds and have crystalline structures. Doping semiconductors with impurities can create an excess or shortage of electrons, making them either n-type or p-type semiconductors respectively.
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice
The name ‘graphene’ comes from graphite + -ene = graphene
This document discusses giant magnetoresistance and its applications. It begins with a history of magnetoresistance discovery in 1857. It then covers ferro magnetic materials, spintronics concepts like spin dependent conduction. It describes giant magnetoresistance using schematics of magnetic multilayers and the first evidence of GMR. Applications discussed include spin valves used in hard drive read heads, MRAM for data storage, and spin transistors. Future areas of research mentioned are magnetic switching transistors, next-gen low power MRAM, and integrating spintronics with semiconductors.
This document discusses spintronics, which uses electron spin rather than charge to store and transmit information. It describes giant magnetoresistance (GMR) and how controlling electron spin can enable lower power devices like MRAM and spin transistors. These spintronic devices could combine data storage, processing and communication on a single chip. While promising faster speeds and denser integration, challenges remain in controlling spin over long distances and integrating spintronic techniques with semiconductor technology.
Spintronics utilizes the spin property of electrons to carry information. It offers advantages over traditional electronics like lower power consumption and greater density. Key developments include the giant magnetoresistance effect, spin transistors, and magnetic random access memory (MRAM). Continued research aims to better inject, manipulate, and detect electron spin in semiconductors for applications in memory and logic devices.
The document discusses ion-beam lithography, which uses a focused beam of ions instead of electrons or photons to pattern surfaces. Ion-beam lithography offers higher resolution than other lithography techniques due to ions having higher momentum and less scattering. It can define patterns through physical sputtering, chemical reactions with precursor gases, or ion implantation. While having advantages like high resolution and minimal proximity effects, it also has lower throughput and can damage substrates more than other lithography methods. The document provides details on ion sources, lithography processes, advantages and disadvantages of the technique.
The document discusses various types of nano devices and their operation. It describes resonant tunneling diode (RTD) which consists of a double barrier structure and exhibits peaks and valleys in current as electron energy passes quantum bound states. Resonant tunneling transistor (RTT) controls large current using small gate voltage. A single-electron transistor (SET) switches current using single electron charge on its gate. Other devices discussed include fin-shaped field-effect transistor (FinFET) and nanowire field-effect transistor (nanowire FET) which have better control of the channel using their 3D gate structure. Nano devices are used in various fields including medical, military and agriculture.
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
Rahul Raghvendra's seminar discussed molybdenum disulfide (MoS2), a 2D semiconductor material that can potentially replace silicon. MoS2 has desirable properties such as a tunable bandgap, high mobility, flexibility and transparency. The seminar covered MoS2's atomic structure, electrical properties, fabrication methods and applications in sensors, memory devices and flexible electronics. Challenges include controlling the number of MoS2 monolayers deposited and developing devices compatible with plastic substrates.
ALD is a thin film deposition technique based on self-terminating surface reactions of gas precursors. It involves alternating exposure of a substrate to different precursors separated by purge steps, resulting in one atomic layer of film growth per cycle. ALD provides highly conformal and uniform coatings with atomic-level thickness control due to its self-limiting growth mechanism. It is widely used for depositing oxides, nitrides and some metals in applications such as semiconductors, coatings, MEMS and solar cells.
h-BN has potential as an ideal dielectric material for 2D electronics. As a gate dielectric, h-BN provides improved carrier mobility and resists dielectric breakdown at high electric fields. When used as a substrate, h-BN enhances graphene conductivity and mobility while improving reliability by facilitating better heat dissipation than conventional dielectrics like SiO2. Overall, h-BN shows promise as an ubiquitous dielectric that can fulfill critical roles in 2D heterostructures and devices.
Ellipsometry- non destructive measuring methodViji Vijitha
Ellipsometry is a non-destructive optical technique that measures the change in polarization state of light upon reflection from or transmission through a sample. It can be used to characterize properties like thickness, composition, and crystallinity of thin films. The document discusses the history and principles of ellipsometry, experimental setups, data analysis techniques using modeling to extract sample properties, and applications in measuring films. Modeling involves using equations to describe light-material interactions and minimizing errors between calculated and measured polarization states.
The document discusses how 2D materials can advance energy storage and discusses several research projects utilizing 2D materials for lithium and sodium-ion batteries. It summarizes that integrating selected 2D lithium host materials into 3D architectures can improve electrochemical performance through increased surface area and diffusion pathways. Composite 2D-3D microstructures incorporating graphene offer multiple functional enhancements for energy storage systems. There is a need to explore advanced manufacturing methods for nanostructured materials.
This theory, developed by Bardeen, Cooper and Schrieffer, states that electrons experience an attractive interaction through the lattice that overcomes their normal repulsive interaction, forming Cooper pairs. At low temperatures, these pairs move without resistance through the lattice, causing the material to become a superconductor. The electron-lattice-electron interaction must be stronger than the direct electron-electron interaction for superconductivity to occur.
A presentation on Molecular Beam Epitaxy made by Deepak Rajput. It was presented as a course requirement at the University of Tennessee Space Institute in Fall 2008.
For free download Subscribe to https://www.youtube.com/channel/UCTfiZ8qwZ_8_vTjxeCB037w and Follow https://www.instagram.com/fitrit_2405/ then please contact +91-9045839849 over WhatsApp.
Graphene Presentation
A ppt compiled by Yaseen Aziz Wani pursuing M.Sc Chemistry at University of Kashmir, J&K, India and Naveed Bashir Dar, a student of electrical engg. at NIT Srinagar.
Warm regards to Munnazir Bashir also for providing us with refreshing tea while we were compiling ppt.
Synthesis, spectroscopic, magnetic properties and superoxide dismutase (SOD) ...IOSR Journals
Three new ternary copper(II) complexes formulated as [Cu(HIda)(bipy)] 1; [Cu(HIda)(phen)] 2; [Cu(HIda)(dmp)] 3; where HIda =N-(2-hydroxyethyl)-2- iminodiacetic acid ; bipy = 2, 2’- bipyridine; phen = 1,10- phenanthroline; dmp = 2,9-dimethyl 1,10-phenanthroline, have been synthesized and characterized by partial elemental analysis, FAB-mass (m/z), EPR, UV-visible and CV measurements. The magnetic and spectroscopic data of all these complexes 1-3 indicate distorted octahedral geometry. The EPR spectra of these complexes in frozen DMSO solutions showed a single at g ca. 2. The trend in g-value (g||>g>2.0023) suggests that the unpaired electron on copper (II) has dx2–y2 character. The SOD activities of the complexes have been investigated. Antibacterial and antifungal activity of these complexes were also measured and discussed.
1) D-block elements are those whose last electron enters the d orbital, lying between s- and p-block elements.
2) Not all d-block elements are transition elements, which are defined as having partially filled d orbitals, while all transition elements are d-block.
3) General properties of d-block elements include high melting/boiling points due to strong metallic bonds, variable oxidation states, and many forming colored ions or complexes.
This document discusses various properties of transition metals including their melting points, boiling points, atomic and ionic radii, ionization energies, oxidation states, and magnetic properties. Some key points:
- Transition metals have high melting and boiling points due to strong metallic bonds and involvement of d-orbitals in bonding. Melting points first increase to a maximum and then decrease along a period.
- Atomic/ionic radii first decrease to a minimum, then remain constant, and increase toward the end of a period as electron-electron repulsion increases.
- Ionization energies generally increase along a period as nuclear charge increases, but the effect is partly canceled by d-orbital shielding.
- Transition
APPLICATIONS OF ESR SPECTROSCOPY TO METAL COMPLEXESSANTHANAM V
This document discusses the applications of electron spin resonance (ESR) spectroscopy to study metal complexes. It outlines several key factors that influence the ESR spectra of metal complexes, including the nature of the metal ion, ligands, geometry, number of d electrons, and crystal field effects. It also describes how zero-field splitting and Jahn-Teller distortions can lead to splitting of electronic levels and influence the number and pattern of transitions observed in ESR spectra. Understanding these various effects is important for extracting information about electronic structure and bonding from ESR data of metal complexes.
This document provides information on various topics related to magnetism and magnetic materials:
1. It discusses different types of magnetic behavior such as diamagnetism, paramagnetism, and ferromagnetism. It also discusses the properties of hard and soft magnetic materials.
2. Key magnetic parameters are defined, including magnetic permeability, susceptibility, intensity of magnetization, Curie temperature, magnetic dipole moment, magnetic flux, and relative permeability.
3. The differences between diamagnetic, paramagnetic, and ferromagnetic materials are summarized in a table comparing their behaviors and properties.
4. The document also explains hysteresis loops, hard and soft magnets, and fer
The document discusses Mott physics and the metal-insulator transition. It introduces concepts such as Fermi liquids in metals, Mott insulators arising from electron-electron interactions, and the competition between kinetic energy and interaction energy leading to a Mott transition from metal to insulator with increasing interaction strength. It also distinguishes between Slater insulators driven by antiferromagnetism and Mott insulators where insulating behavior does not require magnetic ordering.
This document provides an overview of strongly correlated electronic systems. It begins with a list of some historical landmarks in the field, including early works developing band theory and models like the Hubbard model. It then contrasts the band structure approach with an atomic physics perspective that considers local electron-electron interactions. The document discusses how transition metal and rare earth compounds exhibit a range of behaviors between itinerant and localized electron limits depending on the relative sizes of the hopping integral and on-site Coulomb interaction. It provides examples of ordered phases that can emerge in correlated systems and how spectral weight is transferred with doping.
This document discusses the magnetic properties of transition metal ions and their coordination complexes. It begins by explaining how transition metal ions have unpaired electrons that contribute to their paramagnetism. It then shows calculations of the spin-only magnetic moment (μS) , total angular momentum magnetic moment (μL+S) , and the effective magnetic moment (μeff) for Cr3+ as an example. For most transition metal ions, the observed μeff is close to the calculated μS. Exceptions are Co2+ and Ni2+ which have higher observed μeff due to spin-orbit coupling. The document also explains how crystal field theory can predict if a complex will be high or low spin based on the ligand's splitting
This document discusses different types of magnetic ordering in materials, including ferromagnetism, ferrimagnetism, and antiferromagnetism. It explains that ferromagnetism results from the coupling of atomic magnetic moments through direct exchange or super exchange interactions. Materials exhibit ferromagnetism below a critical temperature called the Curie temperature. The document also discusses the Heisenberg exchange model and how the exchange interaction depends on the relative orientation of atomic spins. It provides examples of the exchange interaction in transition metals and rare earth elements.
Structure of atom plus one focus area notessaranyaHC1
The document discusses the structure of the atom, including:
1) Rutherford's nuclear model of the atom based on alpha particle scattering experiments. This established the atom's small, dense nucleus at the center with electrons in orbits around it.
2) Planck's quantum theory and the photoelectric effect, which demonstrated light behaving as discrete packets of energy called quanta and supported the nuclear model.
3) Bohr's model of the hydrogen atom incorporating Planck's quanta and explaining atomic spectra through electron transitions between discrete energy levels.
4) Later developments including de Broglie's matter waves, Heisenberg's uncertainty principle, and Schrodinger's wave mechanical model describing electrons as
Introduction to the phenomenology of HiTc superconductors.ABDERRAHMANE REGGAD
1. The document provides an introduction to the phenomenology of high-temperature superconductors (HiTc).
2. It discusses the basic physics of doped Mott insulators and experimental methods used to study HiTc superconductors such as thermodynamic measurements, transport properties, neutron scattering, and ARPES.
3. It also covers topics such as the pseudo-gap phase, the one-hole problem, properties at small doping levels, and properties of the superconducting state.
1. Hartree-Fock theory describes molecules using a linear combination of atomic orbitals to approximate molecular orbitals. It treats electrons as independent particles moving in the average field of other electrons.
2. The Hartree-Fock method involves iteratively solving the Fock equations until self-consistency is reached between the input and output orbitals. This approximates electron correlation by including an average electron-electron repulsion term.
3. The Hartree-Fock approach satisfies the Pauli exclusion principle through the use of Slater determinants, which are antisymmetric wavefunctions that go to zero when the spatial or spin coordinates of any two electrons are identical.
1. Hartree-Fock theory describes molecules using a linear combination of atomic orbitals to approximate molecular orbitals. It treats electrons as independent particles moving in the average field of other electrons.
2. The Hartree-Fock method involves iteratively solving the Fock equations until self-consistency is reached between the input and output orbitals. This approximates electron correlation by including an average electron-electron repulsion term.
3. The Hartree-Fock method satisfies the Pauli exclusion principle through the use of Slater determinants, which are antisymmetric wavefunctions that go to zero when the spatial or spin coordinates of any two electrons are identical.
This document discusses magnetic properties of solids. It defines key terms like magnetization, magnetic susceptibility, paramagnetism and diamagnetism. Paramagnetism occurs in materials with partially filled electron subshells, allowing isolated atomic magnetic dipole moments to align with an external magnetic field. Diamagnetism is a weaker effect where an applied field induces orbital electron currents that create a magnetic field opposing the external field. The document outlines the classical and quantum mechanical origins of these magnetic behaviors.
Principles and applications of esr spectroscopySpringer
- Electron spin resonance (ESR) spectroscopy is used to study paramagnetic substances, particularly transition metal complexes and free radicals, by applying a magnetic field and measuring absorption of microwave radiation.
- ESR spectra provide information about electronic structure such as g-factors and hyperfine couplings by measuring resonance fields. Pulse techniques also allow measurement of dynamic properties like relaxation.
- Paramagnetic species have unpaired electrons that create a magnetic moment. ESR detects transition between spin energy levels induced by microwave absorption under an applied magnetic field.
This document discusses atomic structure and periodicity. It begins by explaining electromagnetic radiation and its wave characteristics. It then discusses Planck's discovery that energy is quantized and Einstein's proposal that light can be viewed as particles called photons. Next, it explains the photoelectric effect and how it provided evidence that light behaves as particles. It discusses the Bohr model of the hydrogen atom and how it correctly predicted the atom's quantized energy levels but was fundamentally incorrect. Finally, it summarizes the development of the modern quantum mechanical model of the atom and periodic trends in atomic properties such as ionization energy and atomic radius.
Ultracold atoms in superlattices as quantum simulators for a spin ordering mo...Alexander Decker
This document discusses using ultracold fermionic atoms in optical lattices to simulate spin ordering models. It begins by describing how atoms can be trapped in optical lattices using laser light. It then proposes how a spin ordering Hamiltonian could be used to achieve superexchange interaction in a double well system. Finally, it suggests going beyond double wells to study resonating valence bond states in a kagome lattice, which could provide insights into phenomena like high-temperature superconductivity.
This document provides an overview of molecules, atoms, and nuclei from a quantum physics perspective. It describes:
1) How molecules are formed from atoms bonding together and the sizes of molecules, atoms, and nuclei differ in orders of magnitude.
2) How quantum mechanics is used to describe atoms like hydrogen and the allowed energy levels and probability distributions of electrons.
3) Additional concepts like an atom's spin, spin-orbit interaction, and the need for symmetric/antisymmetric wavefunctions for indistinguishable particles in multielectron atoms.
4.1 The Atomic Models of Thomson and Rutherford
4.2 Rutherford Scattering
4.3 The Classic Atomic Model
4.4 The Bohr Model of the Hydrogen Atom
4.5 Successes and Failures of the Bohr Model
4.6 Characteristic X-Ray Spectra and Atomic Number
4.7 Atomic Excitation by Electrons
The document discusses the electron shell structure of multi-electron atoms. It begins by explaining how electrons populate energy levels according to the Pauli exclusion principle and minimizing total energy. Electron shells are characterized by principal quantum numbers n, with maximum electron density occurring at certain radii dependent on n. Successive atomic shells are then filled according to Hund's rules, which state that orbitals are filled with one electron each before pairing electrons, and that electrons in singly-occupied orbitals have the same spin. Atomic properties like volume and ionization energy show periodicity as shells are filled. Anomalies in filling order are also discussed.
This document discusses the magnetic properties of materials. Some key points:
1. Magnetic properties are studied using parameters like magnetic dipoles, magnetization, magnetic susceptibility, and permeability. Materials respond differently to external magnetic fields based on these properties.
2. The magnetic moment of a material arises from the orbital and spin motions of electrons and the nuclear spin. Only partially filled electron shells contribute to the net magnetic moment.
3. Materials are classified as diamagnetic, paramagnetic, ferromagnetic, antiferromagnetic, or ferrimagnetic based on their magnetic ordering and response to external fields. Ferromagnetic materials exhibit spontaneous magnetization from internal fields arising via exchange interactions between domains.
4. H
1. The document summarizes the structure and components of an atom according to John Dalton's atomic theory from 1808. Atoms are the smallest indivisible particles of matter and contain subatomic particles like electrons, protons, and neutrons.
2. It describes the properties of these subatomic particles, including their relative masses and electric charges. Electrons were discovered through cathode ray experiments, protons through anode ray experiments, and neutrons by James Chadwick in 1932.
3. The document also summarizes the historical progression of atomic models from Thomson's plum pudding model to Rutherford's nuclear model to Bohr's model of electron orbits to the modern quantum mechanical model developed by Schrodinger and He
The document summarizes key aspects of Mott physics and the Mott transition. It discusses how interactions in metals can be described using Fermi liquid theory with quasiparticles. It then covers how the Mott transition occurs in single band systems at half filling from a metal to an insulator as the ratio of on-site interaction to bandwidth (U/W) increases. Specifically:
1) The Mott-Hubbard approach views the insulator as the starting point, with the opening of a gap U-W between upper and lower Hubbard bands at the transition point Uc=W.
2) The Brinkman-Rice approach views the metal as the starting point, with quasiparticles
The document summarizes some key aspects of quantum mechanics that were at odds with classical physics, including three early indications:
1) Blackbody radiation - Max Planck found electromagnetic energy is radiated in discrete chunks called photons to explain blackbody radiation spectra.
2) Photoelectric effect - Einstein explained light comes in photons and each metal requires a minimum photon energy to eject electrons.
3) Wave-particle duality - Experiments showed electrons and other particles can behave as waves through interference and as particles through localized interactions, seemingly contradicting each other.
- The document discusses strongly interacting atoms in optical lattices and lattice-induced Feshbach resonances.
- It presents exact calculations of two atoms in a 1D lattice and finds avoided crossings between molecular bands and continuum states that depend on the lattice quasimomentum.
- An effective Hamiltonian is constructed that qualitatively captures these effects and introduces a momentum-dependent atom-dimer coupling parameter.
The document summarizes the metal-insulator transition in VO2, which occurs at 340K. In the metallic phase, VO2 exhibits bad metal behavior with short electron mean free paths. The insulating phase has two possible structures - M1 and M2. M1 involves pairing of V atoms and splitting of orbitals. M2 involves formation of zig-zag V chains. The transition may involve both Mott-Hubbard localization and a Peierls instability driven by soft phonon modes near the R point of the Brillouin zone. Precise values are estimated for the electronic parameters characterizing the insulating M1 phase, including Hubbard U, spin gap Δσ, and charge gap Δρ.
Mean field Green function solution of the two-band Hubbard model in cupratesABDERRAHMANE REGGAD
The document discusses the mean field Green function solution of the two-band Hubbard model for cuprate superconductors. It presents the two-band Hubbard model Hamiltonian and describes the rigorous mean field solution of the Green function matrix for the model. This involves deriving properties under spin reversal and particle number operators to describe correlations from each subband. Charge-spin separation is shown for normal and anomalous hopping processes, with the charge-charge correlation mechanism described for superconducting pairing.
Hidden Symmetries and Their Consequences in the Hubbard Model of t2g ElectronsABDERRAHMANE REGGAD
(1) The Hubbard model for t2g electrons in transition metal oxides possesses novel hidden symmetries that have significant consequences.
(2) These symmetries prevent long-range spin order at non-zero temperatures and lead to an extraordinary simplification in exact diagonalization studies.
(3) Even with spin-orbit interactions included, the excitation spectrum remains gapless due to a continuous symmetry arising from the hidden symmetries.
Electronic structure of strongly correlated materials Part III V.AnisimovABDERRAHMANE REGGAD
This document discusses results from DFT+DMFT calculations on various strongly correlated materials. It summarizes calculations showing a strongly correlated metal state in SrVO3 with a lower Hubbard band, a Mott insulator transition in V2O3 accompanied by a small structural change, and heavy fermion behavior in Li2VO4 without f-electrons. It also discusses calculations of the charge transfer insulator NiO, pressure-induced transitions in MnO and Fe2O3, correlated covalent insulators FeSi and FeSb2, superconductivity in LaOFeAs, Jahn-Teller distortions and orbital ordering in KCuF3, and f-electron localization in cerium. The document
Electronic structure of strongly correlated materials Part II V.AnisimovABDERRAHMANE REGGAD
This document summarizes applications of the LDA+U and LDA+DMFT methods to strongly correlated materials. It discusses how these methods can accurately model Mott insulators, charge order, spin order, orbital order, and other phenomena. Specific examples discussed include charge ordering in Fe3O4, orbital ordering in KCuF3 and LaMnO3, and the spin state of Co3+ in LaCoO3. It also outlines the theoretical foundations and computational schemes of the LDA+U and LDA+DMFT methods, such as how the quantum Monte Carlo method can be used to solve the effective impurity problem in LDA+DMFT.
This document provides an overview of density functional theory and methods for modeling strongly correlated materials. It discusses the limitations of standard DFT approaches like LDA for strongly correlated systems and introduces model Hamiltonians and correction methods like LDA+U, LDA+DMFT, self-interaction correction, and generalized transition state to better account for electron correlation effects. The document outlines the basic theory and approximations of DFT, including Kohn-Sham equations and the local density approximation, and discusses basis set approaches like plane waves, augmented plane waves, and pseudopotentials.
The document summarizes the LDA+U method for treating strongly correlated materials and applies it to two cases - CaFeO3 and La1/2Sr2/3FeO3. LDA+U adds an on-site Coulomb interaction term U to the LDA functional to better describe localized d-orbitals. It shows how LDA+U predicts charge disproportionation and an insulating state in both materials, driven by factors like lattice distortions, correlations, and disorder.
Theoretical picture: magnetic impurities, Zener model, mean-field theoryABDERRAHMANE REGGAD
The document summarizes the theoretical picture of dilute magnetic semiconductors (DMS). It describes the Zener model where magnetic impurities interact with charge carriers via exchange interaction. It then discusses the mean field approximation used to calculate the Curie temperature. For higher doping concentrations, a virtual crystal approximation is used to replace impurity spins with a smooth spin density. The model explains several experimental observations but cannot explain some properties like the shape of magnetization curves. At very low doping, a bound magnetic polaron model applies where carriers hop between localized acceptor levels aligned with impurity spins.
The document discusses room temperature superconductivity and summarizes past research on high temperature superconductivity. It also examines the electronic structure and superconducting properties of NaxCoO2. Specifically:
1) Prior research from the 1970s explored whether high temperature superconductivity was possible.
2) Calculations and experiments on NaxCoO2 suggest it has unusual magnetic and electronic properties, including spin fluctuations that may be important to superconductivity.
3) Studies of the superconducting state in NaxCoO2 indicate it is unconventional and not fully gapped, with triplet f-wave pairing being a leading hypothesis to explain experimental results.
The document discusses several ways of driving insulator-metal phase transitions in VO2, including:
1) Thermal heating which can induce the transition by increasing temperature above the critical point.
2) Optical excitation using infrared spectroscopy, ultrafast lasers, or x-rays which can cause partial or full transitions by redistributing electron occupancy.
3) Electrical current injection or charge doping which can screen electron correlations and effectively reduce the transition temperature.
Electrical transport and magnetic interactions in 3d and 5d transition metal ...ABDERRAHMANE REGGAD
The document discusses electrical transport and magnetic interactions in 3d and 5d transition metal oxides. It summarizes that for decades, transition metal oxides have been explored where exotic states like high-Tc superconductivity and colossal magnetoresistance emerge due to cooperative interactions between spin, charge, and orbital degrees of freedom. The document then examines various phenomena in transition metal oxides including Mott insulators, double exchange mechanism, and the Kitaev-Heisenberg model observed in iridate compounds like Na2IrO3 which may realize a spin liquid ground state.
Branislav K. Nikoli
ć
Department of Physics and Astronomy, University of Delaware, U.S.A.
PHYS 624: Introduction to Solid State Physics
http://www.physics.udel.edu/~bnikolic/teaching/phys624/phys624.html
Anderson localization, wave diffusion and the effect of nonlinearity in disor...ABDERRAHMANE REGGAD
This document discusses Anderson localization in disordered lattices and the effect of nonlinearity. It begins with an introduction to Anderson localization and how disorder can suppress diffusion due to interference effects. It then motivates studying this phenomenon experimentally using disordered waveguide lattices. The document describes measuring localized eigenmodes and observing the transition from diffusion to localization by exciting single sites. It finds that nonlinearity increases localization by affecting eigenmodes differently depending on their eigenvalue and enhancing localization of diffusing waves. In conclusion, the experiment provides direct observation of Anderson localization and characterization of diffusion regimes, revealing that nonlinearity generally increases the localization effects of disorder.
Mott metal insulator transitions satej soman, robert tang-kongABDERRAHMANE REGGAD
This document discusses Mott metal-insulator transitions, where certain metals stop conducting electricity at low temperatures despite predictions from classical theory. Mott insulators occur when electron-electron interactions become significant, overwhelming the metallic state. The document outlines band gap theory and how tuning the band gap can cause a transition. It also explains Mott insulator theory, how interactions between transition metals can lead to insulating behavior, and examples like VO2 where a phase transition induces a Mott transition. Real-world applications of Mott insulators include memristors, actuators, and simulating the superfluid to Mott insulator transition in ultracold atomic gases.
Libxc is a library of exchange-correlation functionals for density functional theory calculations. It contains over 100 functionals including LDA, GGA, hybrid, and meta-GGA approximations. Libxc is written in C with bindings for C and Fortran and returns values needed for Kohn-Sham equations like the exchange-correlation energy, potential, and derivatives. It has been incorporated into several electronic structure codes.
This document provides an overview of the WIEN2k software package, which is an augmented plane wave plus local orbital program for calculating crystal properties. It discusses the program structure, inputs and outputs, k-point generation, the self-consistent field cycle, and how to calculate various properties like band structures, densities of states, and partial charges.
Mechanics:- Simple and Compound PendulumPravinHudge1
a compound pendulum is a physical system with a more complex structure than a simple pendulum, incorporating its mass distribution and dimensions into its oscillatory motion around a fixed axis. Understanding its dynamics involves principles of rotational mechanics and the interplay between gravitational potential energy and kinetic energy. Compound pendulums are used in various scientific and engineering applications, such as seismology for measuring earthquakes, in clocks to maintain accurate timekeeping, and in mechanical systems to study oscillatory motion dynamics.
Evaluation and Identification of J'BaFofi the Giant Spider of Congo and Moke...MrSproy
ABSTRACT
The J'BaFofi, or "Giant Spider," is a mainly legendary arachnid by reportedly inhabiting the dense rain forests of
the Congo. As despite numerous anecdotal accounts and cultural references, the scientific validation remains more elusive.
My study aims to proper evaluate the existence of the J'BaFofi through the analysis of historical reports,indigenous
testimonies and modern exploration efforts.
Order : Trombidiformes (Acarina) Class : Arachnida
Mites normally feed on the undersurface of the leaves but the symptoms are more easily seen on the uppersurface.
Tetranychids produce blotching (Spots) on the leaf-surface.
Tarsonemids and Eriophyids produce distortion (twist), puckering (Folds) or stunting (Short) of leaves.
Eriophyids produce distinct galls or blisters (fluid-filled sac in the outer layer)
SDSS1335+0728: The awakening of a ∼ 106M⊙ black hole⋆Sérgio Sacani
Context. The early-type galaxy SDSS J133519.91+072807.4 (hereafter SDSS1335+0728), which had exhibited no prior optical variations during the preceding two decades, began showing significant nuclear variability in the Zwicky Transient Facility (ZTF) alert stream from December 2019 (as ZTF19acnskyy). This variability behaviour, coupled with the host-galaxy properties, suggests that SDSS1335+0728 hosts a ∼ 106M⊙ black hole (BH) that is currently in the process of ‘turning on’. Aims. We present a multi-wavelength photometric analysis and spectroscopic follow-up performed with the aim of better understanding the origin of the nuclear variations detected in SDSS1335+0728. Methods. We used archival photometry (from WISE, 2MASS, SDSS, GALEX, eROSITA) and spectroscopic data (from SDSS and LAMOST) to study the state of SDSS1335+0728 prior to December 2019, and new observations from Swift, SOAR/Goodman, VLT/X-shooter, and Keck/LRIS taken after its turn-on to characterise its current state. We analysed the variability of SDSS1335+0728 in the X-ray/UV/optical/mid-infrared range, modelled its spectral energy distribution prior to and after December 2019, and studied the evolution of its UV/optical spectra. Results. From our multi-wavelength photometric analysis, we find that: (a) since 2021, the UV flux (from Swift/UVOT observations) is four times brighter than the flux reported by GALEX in 2004; (b) since June 2022, the mid-infrared flux has risen more than two times, and the W1−W2 WISE colour has become redder; and (c) since February 2024, the source has begun showing X-ray emission. From our spectroscopic follow-up, we see that (i) the narrow emission line ratios are now consistent with a more energetic ionising continuum; (ii) broad emission lines are not detected; and (iii) the [OIII] line increased its flux ∼ 3.6 years after the first ZTF alert, which implies a relatively compact narrow-line-emitting region. Conclusions. We conclude that the variations observed in SDSS1335+0728 could be either explained by a ∼ 106M⊙ AGN that is just turning on or by an exotic tidal disruption event (TDE). If the former is true, SDSS1335+0728 is one of the strongest cases of an AGNobserved in the process of activating. If the latter were found to be the case, it would correspond to the longest and faintest TDE ever observed (or another class of still unknown nuclear transient). Future observations of SDSS1335+0728 are crucial to further understand its behaviour. Key words. galaxies: active– accretion, accretion discs– galaxies: individual: SDSS J133519.91+072807.4
This presentation offers a general idea of the structure of seed, seed production, management of seeds and its allied technologies. It also offers the concept of gene erosion and the practices used to control it. Nursery and gardening have been widely explored along with their importance in the related domain.
JAMES WEBB STUDY THE MASSIVE BLACK HOLE SEEDSSérgio Sacani
The pathway(s) to seeding the massive black holes (MBHs) that exist at the heart of galaxies in the present and distant Universe remains an unsolved problem. Here we categorise, describe and quantitatively discuss the formation pathways of both light and heavy seeds. We emphasise that the most recent computational models suggest that rather than a bimodal-like mass spectrum between light and heavy seeds with light at one end and heavy at the other that instead a continuum exists. Light seeds being more ubiquitous and the heavier seeds becoming less and less abundant due the rarer environmental conditions required for their formation. We therefore examine the different mechanisms that give rise to different seed mass spectrums. We show how and why the mechanisms that produce the heaviest seeds are also among the rarest events in the Universe and are hence extremely unlikely to be the seeds for the vast majority of the MBH population. We quantify, within the limits of the current large uncertainties in the seeding processes, the expected number densities of the seed mass spectrum. We argue that light seeds must be at least 103 to 105 times more numerous than heavy seeds to explain the MBH population as a whole. Based on our current understanding of the seed population this makes heavy seeds (Mseed > 103 M⊙) a significantly more likely pathway given that heavy seeds have an abundance pattern than is close to and likely in excess of 10−4 compared to light seeds. Finally, we examine the current state-of-the-art in numerical calculations and recent observations and plot a path forward for near-future advances in both domains.
Mechanisms and Applications of Antiviral Neutralizing Antibodies - Creative B...Creative-Biolabs
Neutralizing antibodies, pivotal in immune defense, specifically bind and inhibit viral pathogens, thereby playing a crucial role in protecting against and mitigating infectious diseases. In this slide, we will introduce what antibodies and neutralizing antibodies are, the production and regulation of neutralizing antibodies, their mechanisms of action, classification and applications, as well as the challenges they face.
Embracing Deep Variability For Reproducibility and Replicability
Abstract: Reproducibility (aka determinism in some cases) constitutes a fundamental aspect in various fields of computer science, such as floating-point computations in numerical analysis and simulation, concurrency models in parallelism, reproducible builds for third parties integration and packaging, and containerization for execution environments. These concepts, while pervasive across diverse concerns, often exhibit intricate inter-dependencies, making it challenging to achieve a comprehensive understanding. In this short and vision paper we delve into the application of software engineering techniques, specifically variability management, to systematically identify and explicit points of variability that may give rise to reproducibility issues (eg language, libraries, compiler, virtual machine, OS, environment variables, etc). The primary objectives are: i) gaining insights into the variability layers and their possible interactions, ii) capturing and documenting configurations for the sake of reproducibility, and iii) exploring diverse configurations to replicate, and hence validate and ensure the robustness of results. By adopting these methodologies, we aim to address the complexities associated with reproducibility and replicability in modern software systems and environments, facilitating a more comprehensive and nuanced perspective on these critical aspects.
https://hal.science/hal-04582287
1. Diluted Magnetic SemiconductorsDiluted Magnetic Semiconductors
Prof. Bernhard Heß-Vorlesung 2005Prof. Bernhard Heß-Vorlesung 2005
Carsten TimmCarsten Timm
Freie Universität BerlinFreie Universität Berlin
2. Overview
1. Introduction; important concepts from the theory of magnetism
2. Magnetic semiconductors: classes of materials, basic properties,
central questions
3. Theoretical picture: magnetic impurities, Zener model, mean-field
theory
4. Disorder and transport in DMS, anomalous Hall effect, noise
5. Magnetic properties and disorder; recent developments;
questions for the future
http://www.physik.fu-berlin.de/~timm/Hess.html
These slides can be found at:
3. Literature
Review articles on spintronics and
magnetic semiconductors:
H. Ohno, J. Magn. Magn. Mat. 200, 110
(1999)
S.A. Wolf et al., Science 294, 1488
(2001)
J. König et al., cond-mat/0111314
T. Dietl, Semicond. Sci. Technol. 17,
377 (2002)
C.Timm, J. Phys.: Cond. Mat. 15,
R1865 (2003)
A.H. MacDonald et al., Nature
Materials 4, 195 (2005)
Books on general solid-state
theory and magnetism:
H. Haken and H.C. Wolf, Atom-
und Quantenphysik (Springer,
Berlin, 1987)
N.W. Ashcroft and N.D. Mermin,
Solid State Physics (Saunders
College Publishing, Philadelphia,
1988)
K. Yosida, Theory of Magnetism
(Springer, Berlin, 1998)
N. Majlis, The Quantum Theory of
Magnetism (World Scientific,
Singapore, 2000)
4. 1. Introduction; important concepts from the theory of magnetism
Motivation: Why magnetic semiconductors?
Theory of magnetism:
• Single ions
• Ions in crystals
• Magnetic interactions
• Magnetic order
5. Why magnetic semiconductors?
(1) Possible applications
Nearly incompatible technologies in present-day computers:
semiconductors: processing ferromagnets: data storage
ferromagnetic semiconductors: integration on a single chip?
single-chip computers for embedded applications:
cell phones, intelligent appliances, security
6. More general: Spintronics
Idea: Employ electron spin in electronic devices
Giant magnetoresistance effect: Spin transistor (spin-orbit coupling)
Datta & Das, APL 56, 665 (1990)
Review on spintronics:
Žutić et al., RMP 76, 323 (2004)
7. Possible advantages of spintronics:
spin interaction is small compared to Coulomb interaction
→ less interference
spin current can flow essentially without dissipation
J. König et al., PRL 87, 187202 (2001); S. Murakami,
N. Nagaosa, and S.-C. Zhang, Science 301, 1348 (2003)
→ less heating
spin can be changed by polarized light, charge cannot
spin is a nontrivial quantum degree of freedom,
charge is not
higher
miniaturization
Quantum computer
Classical bits (0 or 1) replaced by quantum bits
(qubits) that can be in a superposition of states.
Here use spin ½ as a qubit.
new
functionality
8. (2) Magnetic semiconductors: Physics interest
Universal “physics construction set”Control over magnetism
by gate voltage, Ohno et
al., Nature 408, 944 (2000)
Vision:
control over positions and
interactions of moments
Vision:
new effects due to competition of old effects
9. Theory of magnetism: Single ions
Magnetism of free electrons:
Electron in circular orbit has a magnetic moment
l
µl
re
ve
with the Bohr magneton
l is the angular momentum in units of ~
The electron also has a magnetic moment unrelated to its orbital motion.
Attributed to an intrinsic angular momentum of the electron, its spin s.
10. In analogy to orbital part:
g-factor
In relativistic Dirac quantum theory one calculates
Interaction of electron with its electromagnetic field leads to a small
correction (“anomalous magnetic moment”). Can be calculated very
precisely in QED:
Electron spin: with (Stern-Gerlach experiment!)
→ 2 states ↑,↓ , 2-dimensional spin Hilbert space
→ operators are 2£2 matrices
Commutation relations: [xi,pj] = i~δij leads to [sx
,sy
] = isz
etc. cyclic.
Can be realized by the choice si
´ σi
/2 with the Pauli matrices
11. quantum numbers:
n = 1, 2, …: principal
l = 0, …, n – 1: angular momentum
m = –l, …, l: magnetic (z-component)
in Hartree approximation:
energy εnl depends only on n, l with 2(2l+1)-fold degeneracy
Magnetism of isolated ions (including atoms):
Electrons & nucleus: many-particle problem!
Hartree approximation: single-particle picture, one electron sees potential
from nucleus and averaged charge density of all other electrons
assume spherically symmetric potential → eigenfunctions:
angular part; same for any
spherically symmetric potential
Yl
m
: spherical harmonics
12. Totally filled shells have and thus
nd shell: transition metals (Fe, Co, Ni)
4f shell: rare earths (Gd, Ce)
5f shell: actinides (U, Pu)
2sp shell: organic radicals (TTTA, N@C60)
Magnetic ions require partially filled shells
Many-particle states:
Assume that partially filled shell contains n electrons, then there are
possible distributions over 2(2l+1) orbitals → degeneracy of many-particle state
13. Degeneracy partially lifted by Coulomb interaction beyond Hartree:
commutes with total orbital angular momentum and total spin
→ L and S are conserved, spectrum splits into multiplets with fixed
quantum numbers L, S and remaining degeneracy (2L+1)(2S+1).
Typical energy splitting ~ Coulomb energies ~ 10 eV.
Empirical: Hund’s rules
Hund’s 1st rule: S ! Max has lowest energy
Hund’s 2nd rule: if S maximum, L ! Max has lowest energy
Arguments:
(1) same spin & Pauli principle → electrons further apart → lower Coulomb repulsion
(2) large L → electrons “move in same direction” → lower Coulomb repulsion
14. Notation for many-particle states: 2S+1
L
where L is given as a letter: L 0 1 2 3 4 5 6 ...
S P D F G H I ...
Spin-orbit (LS) coupling
(2L+1)(2S+1) -fold degenaracy partially lifted by relativistic effects
r
v –e
Ze in rest frame
of electron:
r
–v
–e
Ze
magnetic field at electron position (Biot-Savart):
energy of electron spin in field B:
?
15. Coupling of the si and li: Spin-orbit coupling
Ground state for one partially filled shell:
less than half filled, n < 2l+1: si = S/n = S/2S (Hund 1)
more than half filled, n > 2l+1: si = –S/2S (filled shell has zero spin)
This is not quite correct: rest frame of electron is not an inertial frame.
With correct relativistic calculation: Thomas correction (see Jackson’s book)
over occupied orbitals
unoccupied orbitals
16. Electron-electron interaction can be treated similarly.
In Hartree approximation: Z ! Zeff < Z in λ
L2
and S2
(but not L, S!) and J ´ L + S (no square!) commute with Hso and H:
J assumes the values J = |L–S|, …, L+S, energy depends on quantum
numbers L, S, J. Remaining degeneracy is 2J+1 (from Jz
)
n < 2l+1 ) λ > 0 ) J = Min = |L–S| has lowest energy
n > 2l+1 ) λ < 0 ) J = Max = L+S has lowest energy
Hund’s 3rd rule
Notation: 2S+1
LJ Example: Ce3+
with 4f1
configuration
S = 1/2, L = 3 (Hund 2), J = |L–S| = 5/2 (Hund 3)
gives 2
F5/2
17. The different g-factors of L and S lead to a complication:
With g ¼ 2 we naively obtain the magnetic moment
But M is not a constant of motion! (J is but S is not.) Since [H,J] = 0 and
J = L+S, L and S precess about the fixed J axis:
L
S
S
2S+L = J+S
J
J+S||
Only the time-averaged moment can
be measured
Landé g-factor
?
18. Theory of magnetism: Ions in crystals
Crystal-field effects:
Ions behave differently in a crystal lattice than in vacuum
Comparison of 3d (4d, 5d) and 4f (5f) ions:
Both typically loose the outermost s2
electrons and sometimes some of
the electrons of outermost d or f shell
3d (e.g., Fe2+
) 4f (e.g., Gd3+
)
1s
2sp
3sp
3d
1s
2sp
3spd
4spd
4f
5sp
partially filled shell on outside of
ion → strong crystal-field effects
partially filled shell inside of
5s, 5p shell → weaker effects
partially filled
19. 3d (4d, 5d) 4f (5f)
strong overlap with d orbitals
strong crystal-field effects
…stronger than spin-orbit
coupling
treat crystal field first, spin-orbit
coupling as small perturbation
(single-ion picture not applicable)
weak overlap with f orbitals
weak crystal-field effects
…weaker than spin-orbit
coupling
treat spin-orbit coupling first,
crystal field partially lifts 2J+1
fold degeneracy
d
e
t2
vacuum cubic tetragonal
Single-electron states, orbital part: Many-electron states:
multiplet with fixed L, S, J
2J + 1 states
vacuum crystal
20. Total spin:
if Hund’s 1st rule coupling > crystal-field splitting:
high spin (example Fe2+
: S = 2)
if Hund’s 1st rule coupling < crystal-field splitting:
low spin (example Fe2+
: S = 0)
If low and high spin are close in energy → spin-crossover effects
(interesting generalized spin models)
Remaining degeneracy of many-particle ground state often lifted by terms
of lower symmetry (e.g., tetragonal)
Total angular momentum:
Consider only eigenstates without spin degeneracy. Proposition:
for energy eigenstates
21. Proof:
Orbital Hamiltonian is real:
thus eigenfunctions of H can be chosen real.
Angular momentum operator is imaginary:
is imaginary
On the other hand, L is hermitian
Quenching of orbital momentum
orbital effect in transition metals is small
(only through spin-orbit coupling)
With degeneracy can construct eigenstates of H by superposition that are
complex functions and have nonzero hLi
Lz
E
0
is real for any state since
all eigenvalues are real
22. Theory of magnetism: Magnetic interactions
The phenomena of magnetic order require interactions between moments
Ionic crystals:
Dipole interaction of two ions is weak, cannot explain magnetic order
Direct exchange interaction
Origin: Coulomb interaction
without proof: expansion into Wannier functions φ and spinors χ
yields
electron creation operator
with…
23. with and
exchanged
Positive → – J favors parallel spins → ferromagnetic interaction
Origin: Coulomb interaction between electrons in different orbitals
(different or same sites)
Kinetic exchange interaction
Neglect Coulomb interaction between different orbitals (→ direct exchange),
assume one orbital per ion: one-band Hubbard model
24. 2nd order perturbation theory for small hopping, t ¿ U:
local Coloumb interaction
Hubbard
model
exchanged
Prefactor positive (J < 0) → antiferromagnetic interaction
Origin: reduction of kinetic energy
allowed forbidden
Kinetic exchange through intervening nonmagnetic ions:
Superexchange, e.g. FeO, CoF2, cuprates…
25. Higher orders in perturbation theory (and dipolar interaction) result
in magnetic anisotropies:
• on-site anisotropy: (uniaxial),
(cubic)
• exchange anisotropy: (uniaxial)
• dipolar:
• Dzyaloshinskii-Moriya:
as well as further higher-order terms
• biquadratic exchange:
• ring exchange (square):
Hopping between partially filled d-shells & Hund‘s first rule:
Double exchange, e.g. manganites, possibly Fe, Co, Ni
Hund
26. Magnetic ion interacting with free carriers:
Direct exchange interaction (from Coulomb interaction)
Kinetic exchange interaction
with
tight-binding model (with spin-orbit)
Hd has correct rotational symmetry in spin and real space
Parmenter (1973)
t
t´
27. Idea: Canonical transformation
Schrieffer & Wolff (1966), Chao et al., PRB 18, 3453 (1978)
unitary transformation (with Hermitian operator T) → same physics
formally expand in ε
choose T such that first-order term (hopping) vanishes
neglect third and higher orders (only approximation)
set ε = 1
obtain model in terms of Hband and a pure local spin S:
Jij can be ferro- or antiferromagnetic but does not depend on σ, σ´
(isotropic in spin space)
EF
28. Theory of magnetism: Magnetic order
We now restrict ourselves to pure spin momenta, denoted by Si.
For negligible anisotropy a simple model is
Heisenberg model
For purely ferromagnetic interaction (J > 0) one exact ground state is
(all spins aligned in the z direction). But fully aligned states in any direction
are also ground states → degeneracy
H is invariant under spin rotation, specific ground states are not
→ spontaneous symmetry breaking
29. For antiferromagnetic interactions the ground state is not fully aligned!
Proof for nearest-neighbor antiferromagnetic interaction on bipartite lattice:
tentative ground state:
but (for i odd, j even)
does not lead back to
→ not even eigenstate!
This is a quantum effect
30. Assuming classical spins: Si are vectors of fixed length S
The ground state can be shown to have the form
with
general
helical order
usually Q is not a special point → incommensurate order
Q = 0: ferromagnetic
arbitrary and the maximum of J(q) is at q = Q,
31. Exact solutions for all states of quantum Heisenberg model only known for
one-dimensional case (Bethe ansatz) → Need approximations
Mean-field theory (molecular field theory)
Idea: Replace interaction of a given spin with all other spins by interaction
with an effective field (molecular field)
write (so far exact):
thermal average of
expectation values
fluctuations
only affects energy use to determine hhSiii selfconsistently
32. Assume helical structure:
then
Spin direction: parallel to Beff
Selfconsistent spin length in field Beff in equilibrium:
Brillouin function:
33. Thus one has to solve the mean-field equation for σ :
σ
S BS
0
1
σ
Non-trivial solutions appear if LHS
and RHS have same derivative at 0:
This is the condition for the critical temperature (Curie temperature if Q=0)
Coming from high T, magnetic order first sets in for maximal J(Q)
(at lower T first-order transitions to other Q are possible)
35. Susceptibility (paramagnetic phase, T > Tc): hhSiii = hhSii = χ B
(enhancement/suppression by homogeneous component of Beff for any Q)
For small field (linear response!)
results in
For a density n of magnetic ions:
Curie-Weiß law
T0: “paramagnetic Curie temperature”
36. Ferromagnet:
(critical temperature,
Curie temperature)
χ diverges at Tc like (T–Tc)–1
Τ
1/χ
0 Τ0
General helical magnet:
χ grows for T ! Tc but does
not diverge
(divergence at T0 preempted
by magnetic ordering)
Τ
1/χ
0 Τc
possible T0
(can be negative!)
Mean-field theory can also treat much more complicated cases, e.g.,
with magnetic anisotropy, in strong magnetic field etc.