DDR31
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The presentation covers techniques for designing DDR memory interfaces including an overview of DDR2 and DDR3 bus topologies and functional requirements. Specific topics discussed include interconnect topologies like daisy chain routing, placement techniques, design rules, generating extended nets (X-NETs) to apply electrical rules across passive components, and length matching of differential pin pairs.
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DDR3 is an evolution of DDR2 RAM that provides faster speeds, lower power consumption, and other improvements. Key features of DDR3 include higher clock frequencies up to 1600MHz, lower voltage of 1.5V, 8-bit prefetch, on-die termination for better signal quality, and fly-by topology. DDR3 also has read/write leveling to calibrate timing, lower signaling standards for reduced power/noise, and improved routing guidelines.
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This document summarizes the key aspects of a DDR2 SDRAM controller, including:
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2) It provides a block diagram of the main components and I/O signals of a DDR2 SDRAM controller.
3) It explains the basic functionality of a DDR2 SDRAM controller, including initialization, refresh operations, and read and write operations.
DDR3 SDRAM : Notes
Highlighted notes while studying Concurrent Data Structures:
DDR3 SDRAM
Source: Wikipedia
Double Data Rate 3 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR3 SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Wikipedia is a free online encyclopedia, created and edited by volunteers around the world and hosted by the Wikimedia Foundation.
Memory map selection of real time sdram controller using verilog full project...
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DDR3 SDRAM : Notes
Highlighted notes while studying Concurrent Data Structures:
DDR3 SDRAM
Source: Wikipedia
Double Data Rate 3 Synchronous Dynamic Random-Access Memory, officially abbreviated as DDR3 SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Wikipedia is a free online encyclopedia, created and edited by volunteers around the world and hosted by the Wikimedia Foundation.
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Implementation of High Reliable 6T SRAM Cell Design
Memory can be formed with the integration of large number of basic storing element called cells.
SRAM cell is one of the basic storing unit of volatile semiconductor memory that stores binary logic '1' or '0' bit.
Modified read and write circuits were proposed in this paper to address incorrect read and write operations in
conventional 6T SRAM cell design available in open literature. Design of a new highly reliable 6T SRAM cell
design is proposed with reliable read, write operations and negative bit line voltage (NBLV). Simulations are
carried out using MENTOR GRAPHICS
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memory blocks. Static Random Access Memories (SRAMs)’s focusing on optimizing dynamic power concept of
virtual source transistors is used for removing direct connection between VDD and GND.
Also stacking effect can be reduced by switching off the stacktransistors when the memory is ideal and the
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power consumption, The whole circuit verification is done on the Tanner tool, Schematic of the
SRAM cell is designed on the S-Edit and net list simulation done by using T-spice and waveforms are analyzed
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The problem with this parallel processing of the interleaver is that it requires random access to the memory locations storing the interleaved addresses. However, achieving random access to multiple memory locations in parallel is difficult and inefficient in hardware implementations. It is better to generate the interleaved addresses sequentially rather than requiring parallel random access.
sirishamadishetty
The document describes several digital and analog layout projects completed using Cadence tools including Virtuoso Layout Editor and Assura Verification. For digital projects, standard cells like inverters and logic gates were designed using a 130nm TSMC process. Analog projects included a level shifter, operational amplifier, band gap reference, DAC, and PLL. Challenges involved routing with tight metal pitches, transistor matching, reducing parasitics, and separating analog and digital blocks to prevent noise transfer.
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
E.E. Essential Knowledge Sereies
My Online Courses: https://www.byparams.com/courses
Multi-mode and Multi-band Transceivers
Batch 25(a)
This document provides an overview of RS232 and E1 communication standards. It discusses the classification of communication, RS232 data format including baud rate, transfer modes, cabling and pinouts. It then describes the E1 frame structure including timeslots and frame alignment. The document includes block diagrams of an RS232 to E1 converter.
AN5097.pdf
This document provides guidelines for hardware engineers implementing a DDR4 memory subsystem. It recommends using simulation to optimize the design for signal integrity and timing and provides a checklist of key design considerations. These include routing the data and command/address signals in separate groups, using fly-by routing topologies, matching trace lengths, and properly terminating the various signal groups. Guidelines are given for impedance values and trace spacings for the different signal types.
3G Systems
The document discusses 3G systems and technologies including IMT-2000 performance requirements, WCDMA, CDMA2000, UMTS, and network architectures. Key points include minimum data rates of 144-384 kbps for IMT-2000, WCDMA uses CDMA with a 5 MHz bandwidth and supports data rates up to 2 Mbps, and UMTS network consists of the UE, UTRAN, and core network domains.
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This 24-port Ethernet switch provides high-speed connectivity for users and devices on a local area network. It supports both 10 Mbps and 100 Mbps connections through its RJ-45 ports and includes features such as auto-negotiation, store-and-forward switching, and 8K MAC address support to optimize network performance. The switch can be installed on a desktop, shelf or in an equipment rack using its included mounting brackets.
prepaid energy meter using smartcard
This document describes a smart card prepaid energy meter system using GSM. The system includes an ARM microcontroller that takes readings from an energy meter and displays it on an LCD. It also sends the reading to the user's phone via text message through a GSM modem. The hardware requirements include components like the microcontroller, GSM modem, LCD, LEDs, resistors, capacitors, transformer, regulator, relay, energy meter and lamp. The software used is the KEIL compiler and embedded C. It allows reducing manual efforts to read energy meters and provides a cost effective solution with reduced manpower.
PhD presentation Stepan Sutula
The document discusses the design of low-power, high-resolution delta-sigma analog-to-digital converters (ADCs) using switched-capacitor circuits in CMOS technology. It aims to demonstrate that calibration-free ADCs with resolutions over 16 bits can be achieved in a standard 0.18-micron CMOS process using low-current design techniques. The document outlines delta-sigma modulator architectures, describes sources of non-idealities in switched-capacitor circuits, and presents the design of a demonstrator ADC to verify the hypotheses.
Rs 232 interface
In telecommunications, RS-232 is a standard for serial communication transmission of data. It formally defines the signals connecting between a DTE (data terminal equipment) such as a computer terminal, and a DCE (data circuit-terminating equipment, originally defined as data communication equipment[1]), such as a modem. The RS-232 standard is commonly used in computer serial ports. The standard defines the electrical characteristics and timing of signals, the meaning of signals, and the physical size and pinout of connectors. The current version of the standard is TIA-232-F Interface Between Data Terminal Equipment and Data Circuit-Terminating Equipment Employing Serial Binary Data Interchange, issued in 1997.
ComNet FDX70EAM1 Data Sheet
Buy the ComNet FDX70EAM1 at JMAC Supply.
http://www.jmac.com/ComNet_FDX70EAM1_p/comnet-fdx70eam1.htm?=slideshare
Cdma system
CDMA systems use code division multiple access (CDMA) to allow multiple users to access the network simultaneously using the same frequency band. CDMA uses spreading codes to distinguish between users, allowing signals to overlap in both time and frequency. Key aspects of CDMA include soft handoff which provides better call quality during handoffs, rake receivers which mitigate multipath interference, and intelligent vocoders which provide high quality voice compression. CDMA networks also use power control and simple network planning to provide better coverage than comparable systems while using less infrastructure. The cdma2000 1x standard provided increased data speeds and backward compatibility with earlier CDMA networks.
5378086.ppt
This document discusses techniques for reducing power consumption in integrated circuits and systems. It begins by providing background on technology trends that increase power needs such as rising transistor counts. It then discusses sources of power dissipation in CMOS circuits and how power is affected by voltage, frequency, capacitance, and switching activity. The document outlines a design flow for analyzing power at different levels of abstraction. It presents techniques for reducing dynamic, short-circuit, and leakage power through voltage scaling, transistor sizing, clock gating, and other methods. Architecture-level, circuit-level, and logic-level power optimization techniques are also summarized.
ComNet FDX72M1SHR Data Sheet
Buy the ComNet FDX72M1SHR at JMAC Supply.
http://www.jmac.com/ComNet_FDX72M1SHR_p/comnet-fdx72m1shr.htm?=slideshare
under grund fault ppt (1).pptx
The document describes a system to identify the location of faults in underground electrical cables using an Internet of Things (IoT) platform. The system uses resistors to represent the underground cable and detects changes in voltage across the resistors to determine the location of short circuits. When a short circuit occurs, the voltage data is sent to a microcontroller and IoT module to display the fault location. The system allows utilities to locate cable faults without disconnecting the cable from the grid.
Physical layer interface & standards
A complete ppt for network connectors and interface standards. Modems with types and version are also added in it. utility of cable modem alongwith null modem are described in it. a useful presentation for persons looking for networking devices at physical layer.
RobertPresentation.ppt
This document summarizes the evolution of low power DRAM designs from the 1970s to today. It discusses how DRAM power dissipation has been reduced through techniques like partial word line activation, divided bit lines, lower operating voltages, and refresh charge reduction. Future challenges include reducing subthreshold leakage as threshold voltages scale lower. The document proposes a project to design and optimize an address decoder for low power DRAM applications.
Similar to DDR31 (20)
Lecture summary: architectures for baseband signal processing of wireless com...
Lecture summary: architectures for baseband signal processing of wireless com...
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
Multiband Transceivers - [Chapter 6] Multi-mode and Multi-band Transceivers
DDR31
- 2. Agenda:- DDRx Memory Interfaces Overview Interconnect Topologies Placement and Pre-Route Techniques DDRx Design Rules XNET Generation Electrical Constraint Management Length Matching
- 3. •DDRx Memory Interfaces Overview Functional Group to Route Group Mapping
- 4. DDRx Memory Interfaces Overview General Design Requirements • Typical DDR2 and DDR3 Data Bus Structure: BYTELANE0 DQ[7:0], DM0, DQS_P0, DQS_N0 BYTELANE1 DQ[15:8], DM1, DQS_P1, DQS_N1 BYTELANE2 DQ[23:16], DM2, DQS_P2, DQS_N2 BYTELANE3 DQ[31:24], DM3, DQS_P3, DQS_N3 BYTELANEn DQ[<8bits>], DMn, DQS_Pn, DQS_Nn • Data Bytelane members should be routed on the same layer. – In some DDR2 memory applications the Data Strobe line may single ended. • Address / Command / Control / Differential Clocks should be routed on the same layer but if space issues arise they could route on different layers. – Adjacent layers or layers referencing the same plane layer is preferred. • Address / Command / Control / Differential Clocks route topology differences – DDR2 Interfaces: Routed using a Symmetrical Tree route topology. – Routed to a central t-point with balanced routed legs to each of the Memory IC’s – DDR3 Interfaces: Routed using a Daisy Chain (Fly-by) topology. Route from controller starting with Chip 0 thru Chip n routing in order by Bytelane numbers – Chip 0 is the lower data bit (Bytelane0) / Chip n is the upper data bit (Bytelane3).
- 5. •DDRx Memory Interfaces Overview DDR2 Bus Topologies – On Board SDRAM
- 6. •DDRx Memory Interfaces Overview DDR3 Bus Topologies – On Board SDRAM •Data Bus Termination – Series resistor termination could be used when the point to point connection is in the 2” to 2.5” range. – Resistors located at the center of the transmission line. – DRAM Termination with direct connect using On-Die termination (ODT) – Better signal quality and lower cost compared to using series resistor termination. • Clock Termination – 100ohm Differential terminator at last DDR3 device in the chain.
- 7. DDR2 Electrical Constraint Targets: • Relative Propagation Delay – Data Bytelane Ø 200mils between all members inside of Bytelane(For single ended) – Address / Command / Control 200 – 300mils between Controller(For single ended 25 – 50mils between memory ICs • Propagation Delay – Normally not constraint controlled as it is driven by placement of the memory ICs, which should be placed as close to the Controller as possible, normally between 750 – 1000mils between Memory ICs. Package type is also a driving factor, ICs vs. DIMM Connector. • Differential Phase Tolerance – 25mils for all Data Strobe and Clock Differential Pairs
- 8. Impedance / Design Stack-up:- • Impedance Requirements – Single Ended Target = 50 – 60 Ohms – Differential Pair Target = 100 – 120 Ohms • Design Stack-up considerations
- 9. Interconnect Topologies – Daisy Chain Routing:- DDR3 Address / Control / Command Routing Idle analysis.
- 10. Interconnect Topologies – Daisy Chain Routing:- DDR3 Address / Control / Command Routing Actual analysis
- 11. Placement Techniques:- Component Placement Careful planning of Memory chips or DIMM connectors placement to allow the best possible path for routing. Reserve space for pin escape (fanout), termination resistors as well as termination power supplies. For DDR3 interfaces: – Locate Memory chips to allow Address / Command / Control / Differential Clock Daisy Chain (Fly-by) routing starting at the Controller then connecting to the lowest data bit chip first (Bytelane0) progressing up the Bytelane numbers and ending at the highest data bit chip.
- 12. Placement Techniques:- Electrical Options – DRC Unrouted (Setup > Constraints > Modes) Enabling these options will provide DRC feedback when placing components that do not meet the delay requirements. Rules will be checked using Manhattan distances of Ratsnest connections.
- 13. Design Rules:- Electrical Options – Z Axis Delay (Setup > Constraints > Modes) As tolerances get tighter you can include Package and Z-Axis Delays in the DRC calculations to ensure rules are being met. These settings should be considered when planning out the electrical rules on any high speed interfaces
- 14. Design Rules:- Electrical Options – Z Axis Delay (Setup > Constraints > Modes) Design Stack-up must be defined with all the appropriate thicknesses based on a Fabricator approved stack-up for this additional Z-Axis check to be accurate. Depth (distance) the signal travels down the via or pin holes will be added to the delay calculations.
- 15. X-NET What is X-Net? eXtended Net through passive devices such as a resistor or capacitor which allows electrical design rules to be applied from IC Pin to IC Pin. How to generate X-Net:- AnalyzeSI/EMI SIMModel Assignment
- 16. How to generate X-Net:-
- 17. How to generate X-Net:- Select the component that you want to generate X-Net Click on Create Model
- 18. How to generate X-Net:-
- 19. How to generate X-Net:- If it is a Resistor/Capacitor Network……?
- 20. Length Matching:- How to Length Matching: Two methods for length matching: X-net Pin Pair
- 21. Length Matching:- How to Length Matching: Then you need to go create a Match group and make all the pinpairs to the match group.
- 22. Any Queries