This document presents a novel Field Effect Diode (FED) structure called Silicon On Raised Insulator FED (SORI-FED) that aims to improve the ION/IOFF ratio for nanoscale devices. It summarizes that for channel lengths less than 75nm, regular FED structures cannot be turned off effectively. While previous structures like Side contacted FED (S-FED) and Modified FED (M-FED) addressed this, band-to-band tunneling (BTBT) was found to increase OFF-state current. The proposed SORI-FED includes an oxide layer in the channel to suppress BTBT. Simulation results showed SORI-FED had an 8