SPICE MODEL of SSM3K116TU (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of SSM3K116TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3K116TU (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: SSM3K116TU MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation 8 6 gfs 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID : Drain Current A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.010 0.350 0.340 -2.857 0.020 0.700 0.686 -2.000 0.050 1.100 1.130 2.727 0.100 1.580 1.598 1.139 0.200 2.200 2.240 1.818 0.500 3.500 3.480 -0.571 1.000 4.880 4.850 -0.615 2.000 6.700 6.730 0.448 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 10mA 0V 2.0V 3.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3K116TU Vv ariable 10Vdc 3Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 10.000 Measurement Simulation 1.000 ID : Drain Current A 0.100 0.010 0.00 1.00 2.00 3.00 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.010 0.968 0.976 0.826 0.020 1.008 0.995 -1.290 0.050 1.066 1.034 -3.002 0.100 1.120 1.078 -3.750 0.200 1.180 1.138 -3.559 0.500 1.290 1.267 -1.783 1.000 1.415 1.410 -0.353 2.000 1.600 1.612 0.750 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 1.0A 0.8A 0.6A 0.4A 0.2A 0A 0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 SSM3K116TU VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=0.5A, VGS=4.5V Measurement Simulation Error (%) R DS (on) (m) 75.000 75.095 0.127 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 SSM3K116TU Dbreak D1 PER = 1000u I2 PW = 600u W1 2Adc TF = 10n + TR = 10n - TD = 0 I2 = 1m W I1 IOFF = 0.1mA V1 I1 = 0 ION = 0uA 20Vdc 0 Simulation Result VDD=20V,ID=2A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 0.400 0.401 0.250 Qgd(nc) 1.800 1.808 0.444 Qg(nc) 7.000 4.730 -32.429 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 34.000 34.005 0.015 0.200 33.300 33.250 -0.150 0.500 31.200 31.160 -0.128 1.000 27.900 28.060 0.573 2.000 23.200 23.080 -0.517 5.000 14.000 13.995 -0.036 10.000 7.300 7.350 0.685 20.000 3.000 2.998 -0.067 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 20.0V 17.5V 15.0V 12.5V 10.0V 7.5V 5.0V 2.5V 0V 1.92us 1.96us 2.00us 2.04us 2.08us 2.12us V(2)*4 V(3) Time Evaluation circuit 3 L2 50nH U1 SSM3K116TU RL R1 L1 2 40 V1 = 0 4.7 30nH V2 = 5 V2 VDD TD = 2u R2 10Vdc TR = 6n TF = 7n 4.7 PW = 1u PER = 10u 0 Simulation Result ID=0.25A, VDD=10V Measurement Simulation Error(%) VGS=2.5V Ton(ns) 9.000 9.032 0.356 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 5.0A 10V 4.0A 4.5V 2.5V 3.0A 1.8V 2.0A 1.6V 1.0A 1.4V 0A VGS=1.2V 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 SSM3K116TU Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc SSM3K116TU 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 Source: Drain voltage VSD(V) Simulation Result VSD(V) VSD(V) IDR(A) %Error Measurement Simulation 0.010 0.480 0.481 0.208 0.020 0.510 0.509 -0.196 0.050 0.550 0.549 -0.182 0.100 0.580 0.585 0.862 0.200 0.630 0.629 -0.159 0.500 0.700 0.695 -0.714 1.000 0.750 0.754 0.533 2.000 0.820 0.821 0.122 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 10.06us 10.08us 10.10us 10.12us 10.14us 10.16us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5v V1 V2 = 10.5v U1 TD = 98n SSM3K116TU TR = 0.1ns TF = 0.1ns PW = 10us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 10.600 11.090 4.623 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristic Reference Trj=4.2(ns) Trb=6.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA 1uA 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc SSM3K116TU R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008