SPICE MODEL of 2SK4002 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK4002 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK4002 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK4002 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 5 Measurement Simulation 4 3 gfs 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID : Drain Current A Comparison table Id(A) gfs Error(%) Measurement Simulation 0.001 0.0100 0.0096 -4.0000 0.002 0.0190 0.0191 0.5263 0.005 0.0490 0.0480 -2.0408 0.010 0.0950 0.0953 0.3158 0.020 0.1900 0.1903 0.1579 0.050 0.3000 0.2990 -0.3333 0.100 0.4200 0.4250 1.1905 0.200 0.6000 0.5994 -0.1000 0.500 0.9500 0.9450 -0.5263 1.000 1.3400 1.3300 -0.7463 2.000 1.8700 1.8713 0.0695 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.6A 1.2A 0.8A 0.4A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 2SK4002 Vv ariable 10Vdc 20Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 2.000 Measurement Simulation 1.600 ID : Drain Current A 1.200 0.800 0.400 0.000 0.00 2.00 4.00 6.00 8.00 10.00 VGS : Gate to Source Voltage V Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 0.001 3.400 3.425 0.735 0.002 3.428 3.438 0.292 0.005 3.457 3.464 0.202 0.010 3.492 3.505 0.372 0.020 3.500 3.552 1.486 0.050 3.620 3.655 0.967 0.100 3.730 3.767 0.992 0.200 3.890 3.927 0.951 0.500 4.250 4.246 -0.094 1.000 4.600 4.614 0.304 2.000 5.200 5.132 -1.308 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 2.0A 1.6A 1.2A 0.8A 0.4A 0A 0V 2V 4V 6V 8V 10V I(V3) V_VDS Evaluation circuit V3 0Vdc U1 2SK4002 VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=1A, VGS=10V Measurement Simulation Error (%) R DS (on) () 4.200 4.199 -0.024 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 4n 8n 12n 16n 20n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 2SK4002 PER = 1000u Dbreak PW = 600u W1 TF = 10n + D1 TR = 10n I2 - TD = 0 2Adc I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 480Vdc 0 Simulation Result VDD=480V,ID=2A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 2.000 2.017 0.850 Qgd(nc) 4.400 4.387 -0.295 Qg(nc) 9.000 9.193 2.144 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 10.000 55.000 56.000 1.818 20.000 37.500 37.670 0.453 50.000 23.000 22.000 -4.348 100.000 15.200 14.500 -4.605 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 1.80us 1.85us 1.90us 1.95us 2.00us 2.05us 2.10us 2.15us V(2) V(3)/20.25 Time Evaluation circuit 3 L2 10uH RL R1 L1 2 U1 200 2SK4002 V1 = 0 50 30nH V2 = 20 V2 VDD TD = 2u R2 TR = 5n TF = 5n 50 200Vdc PW = 1u PER = 10u 0 Simulation Result ID=1A, VDD=200V Measurement Simulation Error(%) VGS=10V Ton(ns) 25.000 25.067 0.268 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 2.0A 1.6A 5V 1.2A 4.75V 0.8A 4.5V 4.25V 0.4A 4V VGS=3.75V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 2SK4002 Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK4002 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Source: Drain voltage VSD(V) Simulation Result IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.010 0.560 0.563 0.536 0.020 0.595 0.596 0.168 0.050 0.640 0.638 -0.313 0.100 0.675 0.672 -0.444 0.200 0.710 0.708 -0.282 0.500 0.765 0.768 0.392 1.000 0.825 0.829 0.485 2.000 0.925 0.923 -0.216 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 19us 20us 21us 22us 23us 24us 25us 26us 27us 28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5v V1 V2 = 10.7v U1 TD = 0.8u 2SK4002 TR = 10ns TF = 19ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(us) 3.200 3.204 0.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=0.9(us) Trb=2.3(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10uA 8uA 6uA 4uA 2uA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 R2 2SK4002 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007