Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SK3906MANUFACTURER: TOSHIBABody Diode (Model...
Circuit ConfigurationMOSFET MODELPspice model                                        Model description parameter  LEVEL   ...
Transconductance CharacteristicCircuit Simulation Result               20                            Measurement          ...
Vgs-Id CharacteristicCircuit Simulation result        40A        30A        20A        10A         0A           0V        ...
Comparison GraphCircuit Simulation Result                               40.000                                            ...
Rds(on) CharacteristicCircuit Simulation result        20A        18A        16A        14A        12A        10A         ...
Gate Charge CharacteristicCircuit Simulation result              20V              16V              12V               8V   ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result           20V           16V           12V            8V            ...
Output CharacteristicCircuit Simulation result        30A                                   10.0V                         ...
BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result          100A           10A          1.0A   ...
Comparison GraphCircuit Simulation Result                                      100.00                                     ...
Reverse Recovery CharacteristicCircuit Simulation Result        400mA           0A       -400mA           20.8us         2...
Reverse Recovery Characteristic                                         ReferenceTrj=0.248(us)Trb=0.544(us)Conditions:Ifwd...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result         10mA          9mA          8...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
Upcoming SlideShare
Loading in …5
×

SPICE MODEL of 2SK3906 (Standard+BDS Model) in SPICE PARK

271 views

Published on

SPICE MODEL of 2SK3906 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology, Business
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
271
On SlideShare
0
From Embeds
0
Number of Embeds
22
Actions
Shares
0
Downloads
1
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of 2SK3906 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SK3906MANUFACTURER: TOSHIBABody Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  2. 2. Circuit ConfigurationMOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  3. 3. Transconductance CharacteristicCircuit Simulation Result 20 Measurement 18 Simulation 16 14 12 gfs 10 8 6 4 2 0 0 2.5 5 7.5 10 12.5 15 ID : Drain Current AComparison table gfs Id(A) Error(%) Measurement Simulation 0.100 0.750 0.769 2.533 0.200 1.510 1.538 1.854 0.500 3.534 3.571 1.047 1.000 5.138 5.240 1.985 2.000 7.029 7.143 1.622 5.000 8.879 8.772 -1.205 10.000 12.035 11.905 -1.080 15.000 15.646 15.464 -1.163 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  4. 4. Vgs-Id CharacteristicCircuit Simulation result 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2Evaluation circuit V3 0Vdc U1 2SK3906 Vv ariable 10Vdc 20Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  5. 5. Comparison GraphCircuit Simulation Result 40.000 Measurement Simulation 30.000 ID : Drain Current A 20.000 10.000 0.000 0.00 2.00 4.00 6.00 8.00 10.00 VGS : Gate to Source Voltage VSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 4.600 4.635 0.761 0.200 4.670 4.703 0.707 0.500 4.810 4.827 0.353 1.000 4.930 4.966 0.730 2.000 5.150 5.172 0.427 5.000 5.600 5.576 -0.429 10.000 6.150 6.054 2.485 20.000 6.800 6.759 -0.603 40.000 7.650 7.811 2.105 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  6. 6. Rds(on) CharacteristicCircuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_VDSEvaluation circuit V3 0Vdc U1 2SK3906 VDS 10Vdc 0Vdc VGS 0Simulation Result ID=10A, VGS=10V Measurement Simulation Error (%) R DS (on) () 0.270 0.269 -0.370 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  7. 7. Gate Charge CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mSEvaluation circuit V2 0Vdc PER = 1000u U1 Dbreak PW = 600u W1 2SK3906 TF = 10n + D1 TR = 10n I2 - TD = 0 20Adc I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 400Vdc 0Simulation Result VDD=400V,ID=20A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 28.000 28.000 0.000 Qgd(nc) 11.000 11.035 0.318 Qg(nc) 57.000 53.931 -5.384 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 5.210 5.150 -1.152 1.000 3.430 3.500 2.041 10.000 0.960 1.005 4.687 100.000 0.185 0.178 -3.784 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  9. 9. Switching Time CharacteristicCircuit Simulation result 20V 16V 12V 8V 4V 0V 1.80us 1.88us 1.96us 2.04us 2.12us 2.20us V(2) V(3)/20 TimeEvaluation circuit 3 L2 50nH RL U1 R1 L1 2 2SK3906 20 V1 = 0 4.7 30nH V2 = 20 V2 VDD TD = 2u R2 TR = 5n TF = 5n 4.7 200Vdc PW = 1u PER = 10u 0Simulation Result ID=10A, VDD=200V Measurement Simulation Error(%) VGS=10V Ton(ns) 45.000 45.066 0.147 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  10. 10. Output CharacteristicCircuit Simulation result 30A 10.0V 8.0V 7.0V 20A 6.5V 10A 6.0V VGS=5.5V 0A 0V 4V 8V 12V 16V 20V I(Vdsense) V_VvariableEvaluation circuit Vdsense 0Vdc U1 2SK3906 Vv ariable 5.5Vdc 20Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(R1) V_V1Evaluation Circuit R1 0.01m V1 U1 2SK3906 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  12. 12. Comparison GraphCircuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.10 0 0.4 0.8 1.2 1.6 Source-Drain voltage VSD(V)Simulation Result VSD(V) VSD(V) IDR(A) %Error Measurement Simulation 0.100 0.525 0.529 0.762 0.200 0.565 0.563 -0.354 0.500 0.615 0.609 -0.976 1.000 0.650 0.647 -0.462 2.000 0.690 0.689 -0.145 5.000 0.750 0.762 1.600 10.000 0.845 0.841 -0.473 20.000 0.960 0.957 -0.313 40.000 1.130 1.132 0.177 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 20.8us 21.6us 22.4us 23.2us 24.0us 24.8us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5v V1 V2 = 10.7v TD = 2u U1 TR = 10ns 2SK3906 TF = 10ns PW = 20us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(us) 0.248 0.249 0.403 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  14. 14. Reverse Recovery Characteristic ReferenceTrj=0.248(us)Trb=0.544(us)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1Evaluation Circuit R1 0.01m U1 2SK3906 V1 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

×