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This paper presents a detailed conceptual analysis of IR Drop effect in deep submicron technologies and its reduction techniques. The IR Drop effect in power/ground network increases rapidly with technology scaling. This affects the timing of the design and hence the desired speed. It is shown that in present day designs, using well known reduction techniques such as wire sizing and decoupling capacitor insertion, may not be sufficient to limit the voltage fluctuations and hence, two more important methods such as selective glitch reduction technique and IR Drop reduction through combinational circuit partitioning are discussed and the issues related to all the techniques are revised.
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Multi-carrier modulation is an attractive technique for fourth generation .OFDM is based on
multicarrier modulation technique. In OFDM system the bit stream is divided into many different sub
channels. An efficient and distortionless scheme for peak power reduction in OFDM is proposed. In this
paper, a set of mapping where the actual transmit signal is selected. From this set of signal reduced
PAPR. Simulation results are shown. The lowest PAPR is compared with conventional work. It is also
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E2020 General TDR Training from AEA Technology, Inc. For further assistance, visit our dedicated help desk at http://help.aeatech.com or send an email to techsupport@aeatechnology.com. You can also visit us online at http://aeatechnology.com.
DEVELOPMENT OF A SOFTWARE TOOL FOR PLANNING MICROWAVE SYSTEMS AT ABOVE 10 GHz, ESTIMATING CO-CHANNEL INTERFERENCE AND RAIN ATTENUAITON, USING ITU-MODEL ON MATLAB AND TO VALIDATE THE SOFTWARE AGAINST AN INDUSTRY STANDARD (CONNECT) TOOL”
Performance and Analysis of OFDM Signal Using Matlab SimulinkIJMER
Multi-carrier modulation is an attractive technique for fourth generation .OFDM is based on
multicarrier modulation technique. In OFDM system the bit stream is divided into many different sub
channels. An efficient and distortionless scheme for peak power reduction in OFDM is proposed. In this
paper, a set of mapping where the actual transmit signal is selected. From this set of signal reduced
PAPR. Simulation results are shown. The lowest PAPR is compared with conventional work. It is also
compared BER to SNR and best result is achieved.
E2020 General TDR Training from AEA Technology, Inc. For further assistance, visit our dedicated help desk at http://help.aeatech.com or send an email to techsupport@aeatechnology.com. You can also visit us online at http://aeatechnology.com.
The USB 2.0 standard is widely deployed in both computer and embedded systems. Compliance testing for this standard includes signal integrity as well as a number of low-level protocol tests.
This presentation provides an overview of the test requirements for USB 2.0 compliance and provide background on each test case. Details of fixtures and signal integrity requirements are highlighted in detail.
For more information visit http://rohde-schwarz-scopes.com or call (888) 837-8772 to speak to a local Rohde & Schwarz expert.
The challenges facing in pharmaceutical maintenanceMANUEL PACINI
Maintenance strategies for the pharmaceutical industry.
Maintenance and service-related items are often the second-largest budget element in a laboratory after salaries and benefits
Access the video from this presentation for free from
http://www.rohde-schwarz-usa.com/DebuggingEMISS_On-Demand.html
Overview:
Electromagnetic interference is increasingly becoming a problem in complex systems that must interoperate in both digital and RF domains. When failures due to EMI occur it is often difficult to track down the sources of such failures using standard test receivers and spectrum analyzers. The unique ability of real-time spectrum analysis and synchronous time domain signal acquisition to capture transient events can quickly reveals details about the sources of EMI.
What You Will Learn:
How to isolate and analyze sources of EMI using an oscilloscope
Measurement considerations for correlating time and frequency domains
Near field probing basics
Presented By:
Dave Rishavy, Product Manager Oscilloscopes, Rohde & Schwarz
Dave Rishavy has a BS in Electrical Engineering from Florida State University and an MBA from the University of Colorado. Prior to joining Rohde and Schwarz, Mr. Rishavy gained over 15 years of experience in the test and measurement field at Agilent Technologies. This included positions in a wide range of technical marketing areas such as application engineering, product marketing, marketing management and strategic product planning. While at Agilent, Dave led the marketing and industry segment teams for the Infiniium line of oscilloscopes as well as high end logic analysis.
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Signal Basics
Analog / Digital Signals
Real vs Complex
Periodic vs. Aperiodic
Bounded vs. Unbounded
Causal vs. Noncausal
Even vs. Odd
Power vs. Energy
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parameters, computed starting from a piecewise-linear fitting
of their step response (PWLFIT). Such step response is directly
available from time-domain reflectometer measurements
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formulation of computational efficiency of the SFC with respect to
the standard time-domain convolution is given. Two application
examples are used to verify the PWLFIT performance and to
perform a comparison with macromodeling methods defined in
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Index Terms—Digital wave models, time-domain macromodeling,
S-parameters, step response.
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See how to accelerate model training and optimize model performance with active learning
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2. Digital signal Problems
Single net Multiple net
• Reflection
• EMC radiation
• Stub ringing
• Jitter
• Losses
• Crosstalk
• SSN
• Power supply distribution
noise
• Clock tree skew
• EMC radiation
4. When to Worry About SI
• Tr > Tpd
• Multi-pin connectors
• Wide buses
• Heavily loaded lines
• Loads concentrated
• Buses cannot be terminated
• New, unproven devices
• Critical timing
5. Analysis Tool
Be careful : you can spend 2 days or 2 months for the
analysis
• Analyze and understand criteria and analysis tools
• Identify the potential problem areas
• Measure new phenomena / technologies
(Oscilloscope, TDR, Network analyzer)
Domains: Time domain and Frequency Domain
6. This definition apply at any interconnection level:
• Within chips (Leadframes)
• Between components (PCB traces)
• Between boards (Connectors)
• Between subsystems (Cables)
Transmission Line
7. Resistance per
Unit Length Inductance per
Unit Length
Capacitance
per Unit
Length
Conductance per
Unit Length
Lossless case: R = 0, G = 0
Transmission Line
10. Voltage and Current Waves
V(x,t) = Vi + Vr
I(x,t) = Ii + Ir
1) For the first waveform, the transmission line shows its line impedance
2) The incident wave travels down the line. After Tpd time, the waveform hits
the load, and a portion of the wave is reflected.
3) The reflected wave travels down the line. After Tpd time, the waveform hits
the source, and a portion of the wave is reflected.
ZsZ
Z
VsVi
0
0
14. Crosstalk is coupling of unwanted energy (signal) onto a victim line
• Coupling among TL (coupled lines in PCBs/leadframes/cables)
• Impedance of common current returns paths (Ground bounce)
• Coupling in connectors
• Indirect electromagnetic coupling (EMC)
In this document crosstalk will refer to the direct coupling mechanism
only (coupled lines in PCB/leadframe/cables and connectors)
For each signal there is a “noise budged” allowed. All
previous phenomena contribute to this budged
What-is Crosstalk
15. • Clock signals
• Long address / data buses
• Analog signals in digital circuits
• Asynchronous Signals (reset, etc)
The configurations could be very complex where more
signals can contribute to total crosstalk noise. For example:
Ground signalAnalog signal
(victim)
Clock signal
(aggressor)
Reset signal
(victim)
Read/Write signal
(aggressor)
Data signal(aggressor)
Sensitive Signal Lines
16. A single line presents a very simple
electromagnetic field configuration
In general: a multi-conductor system of n conductors (excluding the
reference conductor) shows n propagation modes.
Two coupled lines show a more complex electromagnetic field configuration.
There are two propagation modes and two propagation speeds.
Electrical (green) and
magnetic (blue) fields
Electrical fields for even (left) and odd (right) for conductor A (magnetic field is omitted for simplicity)
A B
Parallel Trace Crosstalk
17. Parallel Trace Crosstalk
Ic - Il
Rt
cm lm
Rt
Rt
Rtx
Ic + Il
Far-end crosstalk
Near-end crosstalk
To
2To
Tr+2 T
Tr
Tr+ T
reflection
Case study: two-line symmetrical:
• two propagation MODEs (odd and
even)
• homogeneous material ->
Far-end crosstalk = 0
Rt = termination resistor
Tr = rise time of the incident wave
To = propagation delay of the odd mode
Te = propagation delay of the even mode
T = difference between even and odd
propagation delays
Note: Rt is calculated in order to
match the impedance of the coupled
structure to reduce reflections
BA
C D
A
B
C
D
18. Far-End Crosstalk
Rt
cm lm
Rt
Rt
Rt
x
BA
C D
Far-end crosstalkTo
Tr
Tr+ T
A
B
C
D
The amplitude is a function of the coupling coefficient, but could be is “clamped” if
the rise time is larger than the difference between the propagation delays of the two
modes. At least, the amplitude can be 0 if the two modes propagates at same speed
(case homogeneous material)
Far-end crosstalk between two
lines with an input signal of 200ps
versus DT
DT=0p
Rise time=200p
DT=50p
DT=100p
DT=150p
DT=200p
DT=250p
DT=300p
19. Rt
cm lm
Rt
Rt
Rt
x
BA
C D
Near-end crosstalk
2To
Tr+2 T
Tr
A
B
C
D
Amplitude is only a function of the coupling coefficient.
Near-end crosstalk between two
lines with an input signal of 200ps
versus DT (50ps step)
DT
0 300ps
Near-End Crosstalk
20. Incident and Transmitted Pulses
Rt
cm lm
Rt
Rt
Rt
x
BA
C D
Tr
A
B
C
D
The transmitted pulse shows first an amplitude reduction due to loss of energy
coupled to line CD.
The incident waveform shows some reflections of the far-end crosstalk due to
the different velocity of the propagation modes
Reflection
21. When the total length of the interconnection is long
enough to be transmissive. With the actual
technologies, length could be very short
LS 70 cm
A, ALS 25 cm
FAST, FACT, ACT, AC, AS, BCT, LV 15 cm
ECLinPS 3 cm
When Use Termination
22. Matched Termination is possible if:
• Single path, no branches, no loads (Not practical)
• Matched source
• Matched load
Reflections are eliminated at the far end of the signal
paths BUT:
• Signal level is cut down by half (only point to point)
• High driver/return current and power dissipation
Matched Termination
23. The effective line impedance is defined by a
combination of:
• The unloaded line impedance
• The effect of stubs (Zeff decrease)
• The effect of loads (Zeff decrease), usually capacitive.
Starting from a unloaded line of about 100 ohms it is
normal to obtain an effective impedance of 25-60ohm
Effective Line Impedance
24. Eye diagrams are obtained by superimposing all the time frames
of a bit-sequence. This function is very useful to check the quality
of a data transmission channel. Usually, this function requires the
definition of stimulus signals with long bit-sequences
Eye openingJitter
Eye-diagram
25. Data detection is synchronized by the clock signal, that defines
the bit-width.
clock
data
Bit width
Eye-diagram
26. Consider a waveform at receiver for a
single edge signal
Z0, Td
tsetup
Inter-symbol interference occurs when: bit_width < tsetup
tsetup is the settling time required to extinguish the transient.
Example: settling time tsetup = 11 ns
1) 200Mb/s bit-rate 5ns bit-width 3 bits (11/5) of inter-symbol interference
2) 500mb/s bit-rate 2ns bit-width 6 bits (11/2) of inter-symbol interference
Note: previous bits could be 0 or 1. There are a lot of possible
combinations pseudo-random bit sequences
Inter-symbol interference
27. Eye-diagrams examples (1)
This eye-diagram shows
a bounce in the middle
of the bit-time due to a
mismatch of impedance
that produce a noise
margin reduction on
signal levels in a critical
point.
The rise
waveform
shows a sliced
edge due to
the inter-
symbolic
interference
This eye-diagram shows
a strong jitter mainly due
to the asymmetry
between the “1” logic and
the “0” logic bit widths
28. Eye-diagrams examples (2)
Both eye-diagrams show a defect due to the rise and fall edges. The
one on left shows a slow edge compared to the data transmission speed
and the one on the rights shows non-monotone rising/falling edges.
29. Eye-diagram measurements are performed by oscilloscopes.
Data Trigger
in in
DSO
Signal
under test
Clock
signal
Common functions available
on DSO:
• persistence
• jitter statistical distribution
Bit-sequence: the actual bit-sequence of the system
(in laboratory: a pseudo-random bit-sequence)
Measuring Eye-diagrams
30. Simulated eye-diagram are obtained starting from simulations with
long bit-sequences
But:
• Which sequence? (PRBS, exhaustive?)
• How many bits generate significant inter-symbol interference?
(strong impact on simulation time)
• Long simulation time
Example: if the interconnection causes significant inter-symbol interference
for 6 bits, an exhaustive analysis requires a bit-sequence containing 26
combinations (000000, 000001, 000010, … , 111111). The total sequence will
be 64 x 6 = 384 bits long. If each bit is 10ns (100Mbit/s), the total simulation
time will be about 4us.
Simulating Eye-diagrams
31.
32. TDR/TDT Basics
• TDR: Time Domain Reflectometry
• TDT: Time Domain Transmission
– A voltage step is propagated down the transmission line under
investigation, and the incident and reflected voltage waves are
monitored by the oscilloscope at a particular point on the line
Step-wave
generator
Oscilloscope
DUT
Launch cable (Z0)
TDT
TDR
33. TDR: Resolution
• two discontinuities become indistinguishable when
separated by a time (and related distance) that is less than
half of the risetime
Example of two
discontinuities 2mm
apart. They can be
distinguished only
with a 10ps risetime
34. Multiple discontinuities
r1 % error in r2
0.01 < .25%
.05 ~ 2%
.10 ~ 6%
The first discontinuity has a
maximum reflection
coefficient of r1 and the
second of r2. The table
shows that the percent error
in r2 due to r1 could be
very high also for small
value of r1.
• The first discontinuity causes a degradation of rise time
and loss of accuracy on the second discontinuity
36. TDR Amplitude
Normally 250-400mV
Some characterizations require smaller voltage steps:
– reduce the step amplitude on the instrument
– use attenuators
Note: always utilizes the initialization procedure to set 0r
reference level. It is also suggested to store the
waveforms in open or short conditions to use as
reference level.
37. TDR Applications
• TL & cable loss
• TL discontinuities (vias, bend)
• RLC parasitic measurements
• Packages
• Connectors impedance & crosstalk
• Common mode filters parasitic
• Dynamic impedance at inputs/outputs
• Dynamic impedance at clamping diodes
40. Balanced Interconnection Model
For symmetrical structures it is possible to define:
Zeven: impedance of single conductor versus the
ground
Zodd: impedance of single conductor versus the
symmetry plane of the two conductors
There is a Sprint primitive (bimodal adapter) that can be used
to create models based on two TL with Zeven and Zodd
impedance
Zeven, TD
Zodd, TD
Bimodal
adapter
Bimodal
adapter
42. Common Mode Impedance
• Both TDR steps are positive
• TDR steps must be aligned during setup
• DUT must be connected to TDR through two cables of the same length
0.75r
TDR
50ohm
50ohm1
2
5pF
3
4
S11even=(S111com + S112com) / 2 at 50ohm reference impedance
From a practical point of view the measure is done using
two TDR heads:
S21even=(S213com + S214com) / 2 at 50ohm reference impedance
0.25r
0.0r
0.5r
1r
S111com
S112com
S213com
S214com
Start PWL
End PWL
43. Differential mode Impedance
TDR steps must have opposite direction
TDR steps must be aligned during setup
DUT must be connected to TDR through two cables of the same length
TDR
50ohm
50ohm1
2
5pF
3
4
S11odd=(S111dif - S112dif) / 2 at 50ohm reference impedance
S21odd=(S213dif - S214dif) / 2 at 50ohm reference impedance
-0.5r
-1.0r
0r
0.5r
1.0r
S111dif
S112dif
S214dif
S213difStart PWL
End PWL
45. Changing Reference Impedance in S-params
0.0r
0.5r
1r
S11a
S21a
1r
0.0r
0.5r
S11b
S21b
TDR/TDT responses of lossy TL
(Z0=90ohm) measured with a 50ohm TDR
S11a,S21a
90ohm
TDR
90ohm
90ohm
S21bS11b
The model is simulated
with a TDR configuration
having 90ohm reference
impedance
B50ohm 1 0 2 0 S11=PWL( <S11a> ) Z0=50 TD=0
+ S21=PWL( < S21a>) Z0=50 TD=delay
B90ohm 1 0 2 0 S11=PWL( <S11b> ) Z0=90 TD=0
+ S21=PWL( <S21b> ) Z0=90 TD=delay
A new model is obtained at
90ohm reference impedance
46. • R, L, C with parasitic
• lumped equivalent circuits
• TDR models
• Common mode filters
• lumped equivalent circuits
• TDR models
“Pure” TDR models can be developed for components
with a maximum of four ports under the hypothesis
of linear devices. Non linear devices must be modeled
through mixed models.
Note: a common mode choke can be modeled under the hypothesis
of constant inductive behavior (no saturation effects)
RLC parasitic
47. Ground plane
Ground pin
connection
50ohm semi-rigid
coaxial cable (to
TDR)
DUT
connection
Cable shield
connection to
ground plane
t
+1 rho
-1 rho
t
+1 rho
-1 rho
t
+1 rho
-1 rho
The TDR characterization is performed with one of
the two pins connected to ground. The model
obtained can be used “as it is” for component
utilized in the same configuration. For “series”
connections, a “serial adapter” must be used (see
SPRINT user’s manual)
R
L
C
TDR on 2-pin R, L and C
48. IC Packages and input capacitance
measurement setup
Ground plane
Ground pin
connection
50ohm semi-rigid
coaxial cable (to
TDR)
Power
rail
SMD
capacitor Power pin
connection
DUT
connection
Cable shield
connection to
ground plane
To power
supply
50. IC Package BTM models
0
-1
+1
Rho
BTM block
BTM block
BTM block
Integrated model
Divided model
51. IC Package Integrated model
Two ways to describe the scattering parameter:
• by file
• by PWL (Piece-Wise Linear approximation)
By file:
1) store a .g file of the measure
2) complete the file with Z0 and
TD parameters
3) create a Bxxxx statement
Bin 1 0 S11=FILE(filename)
By PWL:
1) capture the measure in Sights
2) activate the command PWL extract
3) save the PWL approximation on file
4) create a Bxxxx statement by including
the PWL approximation
Bin 1 0 S11=PWL(0n 0 100ps 0.1
200ps 0.1 250ps -.05 400ps .4 800ps .9
1.2ns 1) Z0=50 TD=0
53. Connector models
• LC
– 3D L,C descriptions with mutual inductors
• S-parameter
– single pin: 2-port scattering parameters
• discontinuity
– two pins: 4-port scattering parameters
• discontinuity
• crosstalk
• TL
– n-pins: based on unbalanced and balanced TL
• discontinuity
• crosstalk
TL based models require recursive model optimization
54. TDR Analysis on Connector
• The TDR is connected to one of
the pin (pin under test)
• All pins surrounding the TDR
injection point are connected to
50ohm terminations (reference
impedance)
• TDR and TDT are measured for
the pin under test
• Near-end and Far-end crosstalk
is measured for the surrounding
pins
Only the crosstalk
between adjacent pins is
taken into account
55. Measurement configurations
The characterization must be repeted for all different pin
configurations. For example, for a regular pin matrix
(homogeneous density in row and column directions):
50ohm termination
TDR head
DSO (near-end crosstalk)
unconnected pins
TDR on central pin
Xtalk on nearest pin
TDR on central pin
Xtalk on diagonal pin
TDR on lateral pin
Xtalk on nearest pin
TDR on lateral pin
Xtalk on diagonal pin
TDR on corner pin
Xtalk on nearest pin
TDR on corner pin
Xtalk on diagonal pin
Note: the connections on the other side of the
connector are not reported in the figure
1 2 3 4
5 6
56. Connector TDR measurement setup
• A common ground reference plane
must be defined around connector
pins
• TDR/TDT connections with 50 cable
• 50 ohm termination for surrounding
pins
• As short as possible connections
connector
Copper foil (GND)
57. SPRINT simulator
• Spice-like syntax
• DSP based
• Allows TDR* modeling
Simulation time grows with complexity linearly**
* Time Domain Reflectometry
** Spice-based simulators grows exponentially
58. Primitives
• Linear R,L,C
• Non linear resistors
• Time controlled resistor
• Voltage controlled resistors
• Independent sources
• Voltage/current controlled sources
• Time-domain scattering parameters
• ...
59. Resistors, Capacitors and Inductors
I
V
R
dt
dI
LV
dt
dV
CI
Resistor: an active power load (positive
sign) or generator (negative sign)
Inductor: a reactive power “storage”
Capacitor: a reactive power storage
60. Non-Linear Resistors
Linear resistor
V
I
V/I = R (constant)
Non-linear resistor
V
I
V/I =
V I
v1 i1
v2 i2
v3 i3
… ...
Non-linear resistors can show a non-monotone shape and a no-crossing zero
behaviour
Non-linear resistors are widely used to describe clamping diode or
driver’s pull-up/pull-down transistors
Pxxxx 1 2 -5V -10mA -3V -1mA -0.5V -0.1mA 0V 0A 1V 10mA 2V 100mA
Z0=value
C= value
L=value
61. Independent Sources
• Voltage sources (Thevenin)
• Current sources (Norton)
v
I
N+
N-
N+
N-
R
R
User-defined voltage or current sources
with a linear internal resistor
The voltage/current values can be fixed or variable
62. Independent Sources: functions
DC function
Pulse function
Sinusoidal function
PWL* function
File Function
others ….
* Piece-Wise Linear
Fixed values (power supplies,
voltage references)t
t
t
t
t
Ascii file
Digital signals with linear
rise/fall times
Sinusoidal signals (fixed or variable
frequency and amplitude)
Digital signals with non-linear
rise/fall times
Arbitrary user-defined signals
63. Controlled Voltage/Currents Sources (1)
Example 1: simple 5V voltage source controlled by a 3.3V input (with linear
30ohm output impedance)
Exxxx 20 0 10 0 s(t)=PWL(0 0 1ns 1v 1.5ns 1.2v 2ns .9v 3ns 1) THR(1.5 0 5) 3N 30
The control chain must be applied starting from the end:
1) Delay, 2) static transfer function, 3) dynamic transfer function in this case:
Vout
Vin t
s(t)
1
3N
Vth
DELAY
Static Transfer Function Dynamic Transfer Function
t
Vin
3.3
t
Vin
3.3
3n t
5
3n t
5
3n
64. Controlled Voltage/Currents Sources(2)
Static and dynamic characteristics order is very important: a complete
different result is obtained if the order is reversed:
Vxxxx 10 0 20 0 THR(1.5 0 5) s(t)=PWL(0 0 1ns 1v 1.5ns 1.2v 2ns .9v 3ns 1) 3N 30
The control chain must be applied starting from the end:
1) Delay, 2) dynamic transfer function, 3) static transfer function in this case:
3N
Vout
VinVth
DELAY
Static Transfer Function
t
s(t)
1
Dynamic Transfer Function
t
Vin
3.3
t
Vin
3.3
3n t
3.3
3n t
5
3n
65. Controlled Voltage/Currents Sources(3)
Application: Starting from a “0-1 logic level” bit sequence create a “5V”
signal with a jitter that is a function of the intersymbol interference
Vstim 1 0 PULSE(0 1 0 100P 100P 10N 10N) PSEQ(01001011101000001001111101110001100111111011110011000010010)
Einterference 2 0 1 0 THR(0.5 0 1) s(t)=PWL(0 0 1N 0.4.4 10N 0.8 25N 0.95 60N 1)
Eout 3 0 2 0 s(t)=PWL(0 0 0.4N 0.15 1.5N 0.9 2N 1.2 2.5N 1.3 3N 0.8 4N 1.1 5N 1) 5
Rout 3 4 20
Cout 4 0 10P
Node 1 (input pattern) Node 4 (output pattern)
68. Voltage/Current Controlled Resistors(3)
Rsw1
Rsw2
Gnd Vcc
Moving up and down the
characteristics modify
the unloaded output
rise/fall times
The PWL shapes modify
the trajectories on the
V/I output graph
The speed (and shape) of
the Vgs transitions have
influence on the
unloaded output rise/fall
times
Vgs
The central section of the
characteristics influences
the feed-through current