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Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-1 
LECTURE 360 – CHARACTERIZATION OF ADCS AND SAMPLE 
AND HOLD CIRCUITS 
LECTURE ORGANIZATION 
Outline 
• Introduction to ADCs 
• Static characterization of ADCs 
• Dynamic characteristics of ADCs 
• Sample and hold circuits 
• Design of a sample and hold 
• Summary 
CMOS Analog Circuit Design, 2nd Edition Reference 
Pages 652-665 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-2 
INTRODUCTION 
General Block Diagram of an Analog-Digital Converter 
Digital 
Processor 
x(t) y(kTN) 
Prefilter Sample/Hold Quantizer Encoder 
Fig.10.5-1 
• Prefilter - Avoids the aliasing of high frequency signals back into the baseband of the 
ADC 
• Sample-and-hold - Maintains the input analog signal constant during conversion 
• Quantizer - Finds the subrange that corresponds to the sampled analog input 
• Encoder - Encoding of the digital bits corresponding to the subrange 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-3 
Nyquist Frequency Analog-Digital Converters 
The sampled nature of the ADC places a practical limit on the bandwidth of the input 
signal. If the sampling frequency is fS, and fB is the bandwidth of the input signal, then 
fB < 0.5fS 
which is simply the Nyquist 
relationship which states that 
to avoid aliasing, the 
sampling frequency must be 
greater than twice the 
highest signal frequency. 
Continuous time frequency response of the analog input signal. 
-fB 0 fB f 
Sampled data equivalent frequency response where fB < 0.5fS. 
fS2 
fS 
-fB 0 fB fS-fB fS fS+fB 2fS-fB 2fS 2fS+fB 
f 
Case where fB > 0.5fS causing aliasing. 
fS 
2 
-fB 0 fS 2fS 
f 
Use of an antialiasing filter to avoid aliasing. 
Antialiasing 
Filter 
-fB 0 fB 
f 
fS 
2 
fS 
Fig. 10.5- 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-4 
Classification of Analog-Digital Converters 
Analog-digital converters can be classified by the relationship of fB and 0.5fS and by their 
conversion rate. 
• Nyquist ADCs - ADCs that have fB as close to 0.5fS as possible. 
• Oversampling ADCs - ADCs that have fB much less than 0.5fS. 
Classification of Analog-to-Digital Converter Architectures 
Conversion 
Rate Nyquist ADCs Oversampled ADCs 
Slow Integrating (Serial) Very high resolution <14-16 bits 
Successive 
Medium 
Approximation1-bit 
Pipeline Algorithmic 
Moderate resolution <10-12 bits 
Fast 
Flash Multiple-bit 
Pipeline Folding and 
interpolating 
Low resolution < 6-8 bits 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-5 
STATIC CHARACTERIZATION OF ANALOG-TO-DIGITAL CONVERTERS 
Digital Output Codes 
Digital Output Codes used for ADCs 
Decimal Binary Thermometer Gray Two’s 
Complement 
0 000 0000000 000 000 
1 001 0000001 001 111 
2 010 0000011 011 110 
3 011 0000111 010 101 
4 100 0001111 110 100 
5 101 0011111 111 011 
6 110 0111111 101 010 
7 111 1111111 100 001 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-6 
Input-Output Characteristics 
Ideal input-output characteristics of a 3-bit ADC 
Infinite Resolution 
Characteristic 
Ideal 3-bit 
Characteristic 
1 LSB 
28 
1 LSB 
38 
48 
58 
68 
Analog Input Value Normalized to VREF 
111 
110 
101 
100 
011 
010 
001 
000 
Digital Output Code 
18 
08 
78 
1.0 
0.5 
Quantization 
Noise LSBs 
0.0 
-0.5 
Figure 10.5-3 Ideal input-output characteristics of a 3-bit ADC. 
vin 
VREF 
88 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-7 
Definitions 
• The dynamic range, signal-to-noise ratio (SNR), and the effective number of bits 
(ENOB) of the ADC are the same as for the DAC 
• Resolution of the ADC is the smallest analog change that distinguishable by an ADC. 
• Quantization Noise is the ±0.5LSB uncertainty between the infinite resolution 
characteristic and the actual characteristic. 
• Offset Error is the difference between the ideal finite resolution characteristic and 
actual finite resolution characteristic 
• Gain Error is the 
difference between 
the ideal finite 
resolution charact-eristic 
and actual 
finite resolution 
characteristic 
measured at full-scale 
input. This 
difference is 
proportional to the 
analog input 
voltage. 
111 
110 
101 
100 
011 
010 
001 
000 
Digital Output Code 
vin 
VREF 
Digital Output Code 
Offset = 1.5 LSBs 
111 
110 
101 
100 
011 
010 
001 
000 
08 
Characteristic 
18 
Ideal 
28 
38 
48 
58 
68 
78 
88 
vin 
VREF 
Gain Error = 1.5LSBs 
Ideal 
Characteristic 
08 
18 
28 
38 
48 
(a.) (b.) 
Characteristic 
58 
Actual 
68 
78 
88 
Figure 10.5-4 - (a.) Example of offset error for a 3-bit ADC. (b.) Example of gain 
error for a 3-bit ADC. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-8 
Integral and Differential Nonlinearity 
The integral and differential nonlinearity of the ADC are referenced to the vertical 
(digital) axis of the transfer characteristic. 
• Integral Nonlinearity (INL) is the maximum difference between the actual finite 
resolution characteristic and the ideal finite resolution characteristic measured vertically 
(% or LSB) 
• Differential Nonlinearity (DNL) is a measure of the separation between adjacent levels 
measured at each vertical step (% or LSB). 
DNL = (Dcx - 1) LSBs 
where Dcx is the size of the actual vertical step in LSBs. 
Note that INL and DNL of an analog-digital converter will be in terms of integers in 
contrast to the INL and DNL of the digital-analog converter. As the resolution of the 
ADC increases, this restriction becomes insignificant. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-9 
Example of INL and DNL 
111 
110 
101 
100 
011 
010 
001 
000 
08 
INL = 
-1LSB 
18 
28 
Characteristic 
INL = 
+1LSB 
38 
Ideal 
DNL = 
0 LSB 
48 
DNL = 
+1LSB 
58 
Characteristic 
68 
Actual 
78 
88 
vin 
VREF 
Digital Output Code 
Example of INL and DNL for a 3-bit ADC.) Fig.10.5-5 
Note that the DNL and INL errors can be specified over some range of the analog input. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-10 
Monotonicity 
A monotonic ADC has all vertical jumps positive. Note that monotonicity can only be 
detected by DNL. 
Example of a nonmonotonic ADC: 
111 
110 
101 
100 
011 
010 
001 
000 
08 
Characteristic 
18 
Actual 
28 
38 
Characteristic 
48 
Ideal 
58 
DNL = 
-2 LSB 
68 
78 
88 
vin 
VREF 
Digital Output Code 
Fig. 10.5-6L 
If a vertical jump is 2LSB or greater, missing output codes may result. 
If a vertical jump is -1LSB or less, the ADC is not monotonic. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-11 
Example 360-1 - INL and DNL of a 3-bit ADC 
Find the INL and DNL for the 3-bit ADC shown on the previous slide. 
Solution 
With respect to the digital axis: 
1.) The largest value of INL for this 3-bit ADC occurs between 3/16 to 5/16 or 7/16 to 
9/16 and is 1LSB. 
2.) The smallest value of INL occurs 
between 11/16 to 12/16 and is 
-2LSB. 
3.) The largest value of DNL occurs at 
3/16 or 6/8 and is +1LSB. 
4.) The smallest value of DNL occurs 
at 9/16 and is -2LSB which is 
where the converter becomes 
nonmonotonic. 
111 
110 
101 
100 
011 
010 
001 
000 
08 
Characteristic 
INL = 
+1LSB 
18 
Actual 
DNL = 
+1 LSB 
28 
38 
Characteristic 
48 
Ideal 
58 
INL = 
-2LSB 
DNL = 
-2 LSB 
68 
78 88 vin 
VREF 
Digital Output Code 
Fig. 10.5-6DL 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-12 
DYNAMIC CHARACTERISTICS OF ADCs 
What are the Important Dynamic Characteristics for ADCs? 
The dynamic characteristics of ADCs are influenced by: 
• Comparators 
- Linear response 
- Slew response 
• Sample-hold circuits 
• Circuit parasitics 
• Logic propagation delay 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-13 
Comparator 
The comparator is the quantizing unit of ADCs. 
Open-loop model: 
+ 
- 
V Av(s)Vi i 
VOS 
Ri 
Ro 
Vo 
V1 
V2 Comparator Fig.10.5-7 
Nonideal aspects: 
• Input offset voltage, VOS (a static characteristic) 
• Propagation time delay 
- Bandwidth (linear) 
Av(s) = 
Av(0) 
s 
c+1 
= 
Av(0) 
sc+1 
- Slew rate (nonlinear) 
T = 
C·V 
I (I constant) = 
V 
SlewRate 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-14 
SAMPLE AND HOLD CIRCUITS 
Requirements of a Sample and Hold Circuit 
The objective of the sample and hold circuit is to sample the unknown analog signal and 
hold that sample while the ADC decodes the digital equivalent output. 
The sample and hold circuit must: 
1.) Have the accuracy required for the ADC resolution, i.e. accuracy = 
100% 
2N 
2.) The sample and hold circuit must be fast enough to work in a two-phase clock. For an 
ADC with a 100 Megasample/second sample rate, this means that the sample and hold 
must perform its function within 5 nanoseconds. 
3.) Precisely sample the analog signal at the same time for each clock. An advantage of 
the sample and hold circuit is that it removes the precise timing requirements from the 
ADC itself. 
4.) The power dissipation of the sample and hold circuit must be small. Unfortunately, 
the above requirements for accuracy and speed will mean that the power must be 
increased as the bits are increased and/or the clock period reduced. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-15 
Sample-and-Hold Circuit 
Waveforms of a sample-and-hold 
circuit: 
Definitions: 
• Acquisition time (ta) = time required 
to acquire the analog voltage 
• Settling time (ts) = time required to 
settle to the final held voltage to within 
an accuracy tolerance 
Hold Sample Hold 
ta ts 
S/H Command 
vin*(t) 
Output of S/H 
valid for ADC 
conversion 
vin*(t) 
vin(t) 
vin(t) 
Time 
Amplitude 
 Tsample = ta + ts  Maximum sample rate = fsample(max) = 
1 
Fig.10.5-9 
Tsample 
Other consideratons: 
• Aperture time= the time required for the sampling switch to open after the S/H 
command is initiated 
• Aperture jitter = variation in the aperture time due to clock variations and noise 
Types of S/H circuits: 
• No feedback - faster, less accurate 
• Feedback - slower, more accurate 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-16 
Open-Loop, Buffered S/H Circuit 
Circuit: 
+ - 
vin(t) φ 
vout(t) 
CH 
vin(t), vout(t) 
Switch 
Closed 
(sample) 
vout(t) 
vin(t) 
Switch 
Open 
(hold) 
vin(t), vout(t) 
Switch 
Closed 
(sample) 
Time 
Amplitude 
Fig.10.5-10 
Attributes: 
• Fast, open-loop 
• Requires current from the input to charge CH 
• DC voltage offset of the op amp and the charge feedthrough of the switch will create dc 
errors 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-17 
Settling Time 
Assume the op amp has a dominant pole at -a and a second pole at -GB. 
The unity-gain response can be approximated as, A(s)  
GB2 
s2+GB·s+GB2 
The resulting step response is, vout(t) = 1 - 		 
e-0.5GB·t sin		 


 
43 


 
34 
GB·t+ 
Defining the error as the difference between the final normalized value and vout(t), gives, 
Error(t) =  = 1 - vout(t) = 
43 
e-0.5GB·t 
In most ADCs, the error is equal to ±0.5LSB. Since the voltage is normalized, 
1 
2N+1 = 
43 
e-0.5GB·ts  e-0.5GB·ts = 
4 
3 2N 
Solving for the time, ts, required to settle with ±0.5LSB from the above equation gives 
ts = 
2 
GB ln 
		 
4 
32N = 


 
1 
GB [1.3863N + 1.6740] 
Thus as the resolution of the ADC increases, the settling time for any unity-gain buffer 
amplifiers will increase. For example, if we are using the open-loop, buffered S/H circuit 
in a 10 bit ADC, the amount of time required for the unity-gain buffer with a GB of 1MHz 
to settle to within 10 bit accuracy is 2.473μs. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-18 
Open-Loop, Switched-Capacitor S/H Circuit 
Circuit: 
C 
vin(t) vout (t) 
+- 
φ1d 
φ2 φ1 
+- 
φ1d 
C 
φ2 φ1 
+ 
+ 
vin(t) vout (t) 
+ - 
φ2 φ1 
C 
φ1d 
- 
- 
Switched capacitor S/H circuit. Differential switched-capacitor S/H 
Fig.10.5-11 
• Delayed clock used to remove input dependent feedthrough. 
• Differential version has lower PSRR, cancellation of even harmonics, and reduction of 
charge injection and clock feedthrough 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-19 
Open-Loop, Diode Bridge S/H Circuit 
Diode bridge S/H circuit: 
VDD 
Clock IB 
D1 D2 
vIN(t) vOUT(t) 
D3 D4 
Clock IB 
060927-01 
CH 
rd rd 
Blowthru Capacitor 
vIN(t) vOUT(t) 
CH 
rd rd 
RON = rd 
Sample phase - diodes 
forward biased. 
vIN(t) vOUT(t) 
CH 
ROFF = ∞ 
Hold phase - diodes 
reversed biased. 
MOS diode bridge S/H circuit: 
VDD 
Clock IB 
vIN(t) vOUT(t) 
M1 M2 
M3 M4 
Clock IB 
060927-02 
CH 
1 
gm 
1 
gm 
Blowthru Capacitor 
vIN(t) vOUT(t) 
CH 
1 
gm 
RON = 1/gm 
1 
gm 
Sample phase - MOS 
diodes forward biased. 
vIN(t) vOUT(t) 
CH 
ROFF = ∞ 
Hold phase - MOS 
diodes reversed biased. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-20 
Practical Implementation of the Diode Bridge S/H Circuit 
vout(t) 
060927-03 
VDD 
IB IB 
D5 
D1 D2 
D3 D4 + 
IB 
2 
IB 
2 
M1 M2 
Hold Sample 
VSS 
CH 
vout(t) 
vin(t) 
- 
2IB 
D6 
Practical implementation of the diode bridge 
sample and hold (sample mode). 
VDD 
IB IB 
D5 
IB 
D1 D2 
D3 2IB 
D4 + 
M1 M2 
IB 
Hold Sample 
VSS 
CH 
vin(t) 
- 
2IB 
D6 
Hold mode. 
During the hold mode, the diodes D5 and D6 become forward biased and clamp the upper 
and lower nodes of the sampling bridge to the sampled voltage. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-21 
Closed-Loop S/H Circuit 
Circuit: 
+ - 
+ - 
φ1 
φ1 
φ2 
CH 
vout(t) 
vin(t) 
+- 
CH 
vin(t) vout(t) 
+ - 
φ1 
φ2 
An improved version. 
Fig.10.5-13 
Closed-loop S/H circuit. φ1 is the sample 
phase and φ2 is the hold phase. 
Attributes: 
• Accurate 
• First circuit has signal-dependent feedthrough 
• Slower because of the op amp feedback loop 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-22 
Closed-Loop, Switched Capacitor S/H Circuits 
Circuit: 
φ1 
φ2 
vin(t) φ1d vout(t) 
- 
+ 
CH 
Old charge (φ2) 
φ1 φ2d φ1d 
New charge (φ2) 
+ 
+ 
vin(t) vout(t) 
+ - 
φ2 
φ2 
CH 
φ1 
φ2d 
φ1d φ2 
CH 
CH 
Old charge (φ2) 
CH 
- + 
φ2 φ1d 
φ1d 
φ2d 
φ1 
CH 
CH 
- 
- 
φ1 φ2d 
070616-02 
Switched capacitor S/H circuit 
which autozeroes the op amp 
input offset voltage. 
New charge (φ2) 
A differential version that avoids 
large changes at the op amp output 
Attributes: 
• Accurate 
• Signal-dependent feedthrough eliminated by a delayed clock 
• Differential circuit keeps the output of the op amps constant during the 1 phase 
avoiding slew rate limits 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-23 
Current-Mode S/H Circuit 
Circuit: 
VDD 
IB 
iin iout 
φ1 
CH 
φ1 
φ2 
Fig.10.5-15 
Attributes: 
• Fast 
• Requires current in and out 
• Good for low voltage implementations 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-24 
Aperature Jitter in S/H Circuits 
Illustration: 
If we assume that vin(t) = 
Vpsint, then the 
maximum slope is equal to 
Vp. 
Therefore, the value of V 
is given as 
V =  
Analog 
Input 
dvin 
dt t = Vpt . 
 
vin(to) 
to 
Figure10.5-14 - Illustration of aperature jitter in an ADC. 
The rms value of this noise is given as 
V(rms) =  
dvin 
dt t = 
 
Clock 
Analog-Digital 
Converter 
Vpt 
 2 . 
vin 
Digital 
Output ΔV 
Aperature Jitter = Δt 
The aperature jitter can lead to a limitation in the desired dynamic range of an ADC. For 
example, if the aperature jitter of the clock is 100ps, and the input signal is a full scale 
peak-to-peak sinusoid at 1MHz, the rms value of noise due to this aperature jitter is 
111μV(rms) if the value of VREF = 1V. 
t 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-25 
DESIGN OF A SAMPLE AND HOLD AMPLIFIER 
Specifications 
Accuracy = 10 bits 
Clock frequency is 10 MHz 
Power dissipation  1mW 
Signal level is from 0 to 1V 
Slew rate  100V/μs with CL = 1pF 
Use 0.25μm CMOS 
Technology Parameters (Cox = 60.6x10-4 F/m2): 
Parameter Parameter Description 
Typical Parameter Value 
Symbol 
N-Channel P-Channel 
Units 
VT0 
Threshold Voltage 
(VBS = 0) 
0.5± 0.15 -0.5 ± 0.15 V 
K' Transconductance Para-meter (in 
saturation) 
120.0 ± 10% 25.0 ± 10% μA/V2 
 Bulk threshold 
parameter 
0.4 0.6 (V)1/2 
 Channel length 
modulation parameter 
0.32 (L=Lmin) 
0.06 (L 2Lmin) 
0.56 (L=Lmin) 
0.08 (L 2Lmin) 
(V)-1 
2|F| Surface potential at strong inversion 0.7 0.8 V 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-26 
Op Amp Design 
Gain: 
Gain error = 
1 
1+LoopGain  0.5 LSB = 
1 
211 
Therefore, the op amp gain  211 = 2048 V/V 
Choose the op amp gain as  5000 V/V 
Gainbandwidth: 
For a dominant pole op amp with unity-gain feedback, the relationship between the 
gain-bandwidth (GB), accuracy (N) and speed (ts) is 
ts =  
N+1 
GB ln(2) = 0.693  
 
N+1 
GB 
 
Therefore, if ts  0.5 Tclock = 50 ns (choose ts = 10 ns). For N = 10, the gain-bandwidth 
is 
GB = 0.762x109 = 120 MHz 
Dominant pole is 24 kHz and with an output capacitance of 1pF this means the output 
resistance of the op amp must be  6.6 M. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-27 
Op Amp Design – Continued 
The previous specifications suggest a 
self-compensated op amp. The gain and 
output resistance should be easy to achieve 
with a cascaded output. A folded-cascode 
op amp is proposed for the design. In 
order to have the 0-1V signal range, a p-channel, 
differential input is selected. This 
will give the input 0-1V range. The output 
will effectively be 0-1V with the unity gain 
feedback around the op amp. 
M10 M11 
VPB1 
M3 
I3 
− vIN vOUT 
CL 
061021-01 
VDD = 2.5V 
VPB2 
M8 M9 
I7 
VNB2 
M6 M7 
I4 VNB1 
I5 
I6 
M4 M5 
+ 
M1 M2 
I1 I2 
Bias Currents: 
The 100V/μs slew rate requires I3 = 100μA. Setting I4 = I5 = 125μA gives a power 
dissipation of 0.875mW with VDD = 2.5V. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-28 
Op Amp Design – Continued 
Transistor sizes: 
Design M4-M7 to give a saturation voltage of 0.1V with 125μA. 
 
W4 
L4 = 
W5 
L5 = 
W6 
L6 = 
W7 
L7 = 
2ID 
Kn'·VDS(sat)2 = 
2·125 
120·0.01  200 
Since the upper swing is not as important, choose a saturation voltage of 0.25 for M8 – 
M11. 
 
W8 
L8 = 
W9 
L9 = 
W10 
L10 = 
W11 
L11 = 
2ID 
Kp'·VDS(sat)2 = 
2·125 
25·0.0625 = 160 
To get the GB of 120 MHz, this implies the gm of M1 and M2 is 
gm = GB·CL = (120x106·2)(10-12) = 762 μS 
 
W1 
L1 = 
W2 
L2 = 
gm 
2 
2IDKp' = 
762·762 
2·25·50 = 232 
Let the upper input common mode voltage be 1.5V which gives the W/L of M3 as, 
1V = VSG1 + VSD3 = 0.631 + VSD3  VSD3 = 0.369V  
W3 
L3  60 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-29 
Op Amp Design – Continued 
We now need to check the output resistance and the gain to make sure the specifications 
are satisfied. Let us choose twice minimum channel length to keep the capacitive 
parasitics minimized and not have the output resistance too small. Therefore at quiescent 
conditions, 
rds5 = 133k, rds7 = 222k, gm7 = 1.935mS and rds2 = 250k 
 Routdown  (rds5||rds2)gm7rds7 = 37.29M 
rds9 =rds11 = 167k, and gm11 = 1.697mS 
 Routup  rds11gm9rds9 = 47.33M 
 Rout  20.86M 
The low frequency gain is, 
Av  gm1Rout 
= 762μS·20.86M = 15,886 V/V 
The frequency response will be as shown: 
24kHz 120MHz 
log10f 
061023-02 
Gain 
15,886 
5,000 
7.55kHz 
1 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-30 
Op Amp Bias Voltages 
We also need to design the bias voltages VNB1, VNB2, VPB1 and VPB2. This can be done 
using the following circuit: 
Note, the W/L of M3, M4 and M7 will be 6 so that 
a current of 10μA gives 100μA in M3 of the op 
amp. Also, W/L of M1 and M5 will be 16 so a 
current of 10μA gives 125μA in M4 and M5 of the 
op amp. 
If M2 is 4 times larger than M1, which gives a W/L 
of 64 for M2. Under these conditions, 
I2 = I1 = 
1 
2ß1R2  R = 
106 
2·120·16·10 
= 5.1k 
The extra 40A brings the power dissipation to 
0.975mW which is still in specification. 
The W/L of M6 and M8 are designed as follows: 
VGS8 = VT + 2VON  VGS8 - VT = 0.2V = 
M3 M4 
10μA 10μA 
M1 M2 
2·10 
VDD 
10μA 
M6 
M5 
R 
120·(W8/L8)  
VPB1 
VPB2 
VNB2 
VNB1 
M8 
061021-02 
M7 
10μA 
W8 
L8 = 4.167 
VSG6 = |VT| + 2VON  VSG6 - |VT| = 0.5V = 
2·10 
25·(W6/L6)  
W6 
L6 = 3.20 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-31 
Switch and Hold Capacitor Design 
Switch: 
Since the signal amplitude is from 0 to 1V, a single NMOS switch should be 
satisfactory. The resistance of a minimum size NMOS switch is, 
RON(worst case)  
1 
Kn'(W/L)(VGS-VT) = 
106 
120(1)(1.5-0.5) = 8.33k 
For a CH = 1pf, the time constant is 8 ns. This is too close to the 50 ns so let us increase 
the switch size to 0.5μm/0.25μm which gives a time constant of 4ns. 
Therefore, the W/L ratio of the NMOS switch is 0.5μm/0.25μm and the hold capacitor is 
1pf. 
Check the error due to channel injection and clock feedthrough- 
If we assume the clock that rises and falls in 1ns, then a 0.5μm/0.25μm switch works in 
the fast transition region. The channel/clock error can be calculated as: 
Verror = - 
 
Cchannel 
W·CGDO+ 
2 
CL  
 
VHT- 
V 
3 
HT 
6U·CL - 
W·CGDO 
CL (VS+2VT -VL) 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-32 
Switch and Hold Capacitor Design – Continued 
Assuming CGDO is 200x10-12 F/m we can calculate VHT as 0.8131V. Thus, 
Verror = 
- 
1x10-12  
 
100x10-18+0.5(7.57x10-16) 
0.105x10-3 
15x10-3 - 
 
0.8131- 
100x10-18 
1x10-12 (1+1-0) = -0.586mV 
For a 1volt signal with 10 bit accuracy, the error must be less than 1LSB which is 
0.967mV. The channel/clock error is close to this value and one may have to consider 
using a CMOS switch or a dummy switch to reduce the error. 
CMOS Analog Circuit Design © P.E. Allen - 2010
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-33 
Design Summary 
At this point, the analog designer understands the weaknesses and strengths of the 
design. The next steps will not be done but are listed below: 
1.) Simulation to confirm and explore the hand-calculated performance 
2.) Layout of the op amp, hold capacitor and switch. 
3.) Verification of the layout 
4.) Extraction of the parasitics from the layout 
5.) Resimulation of the design. 
6.) Check for sensitivity to ESD and latchup. 
7.) Select package and include package parasitics in simulation. 
CMOS Analog Circuit Design © P.E. Allen - 2010 
Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-34 
SUMMARY 
• An ADC is by nature a sampled data circuit (cannot continuously convert analog into 
digital) 
• Two basic types of ADCs are: 
- Nyquist – analog bandwidth is as close to the Nyquist frequency as possible 
- Oversampled – analog bandwidth is much smaller than the Nyquist frequency 
• The active components in an ADC are the comparator and the sample and hold circuit 
• A sample and hold circuit must have at least the accuracy of 100%/2N 
• Sample and hold circuits are divided into two types: 
- Open loop which are fast but not as accurate 
- Close loop which are slower but more accurate 
• An example of designing a sample and hold amplifier was given to illustrate the 
electrical design process for CMOS analog circuits 
CMOS Analog Circuit Design © P.E. Allen - 2010

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Lect2 up360 (100329)

  • 1. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-1 LECTURE 360 – CHARACTERIZATION OF ADCS AND SAMPLE AND HOLD CIRCUITS LECTURE ORGANIZATION Outline • Introduction to ADCs • Static characterization of ADCs • Dynamic characteristics of ADCs • Sample and hold circuits • Design of a sample and hold • Summary CMOS Analog Circuit Design, 2nd Edition Reference Pages 652-665 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-2 INTRODUCTION General Block Diagram of an Analog-Digital Converter Digital Processor x(t) y(kTN) Prefilter Sample/Hold Quantizer Encoder Fig.10.5-1 • Prefilter - Avoids the aliasing of high frequency signals back into the baseband of the ADC • Sample-and-hold - Maintains the input analog signal constant during conversion • Quantizer - Finds the subrange that corresponds to the sampled analog input • Encoder - Encoding of the digital bits corresponding to the subrange CMOS Analog Circuit Design © P.E. Allen - 2010
  • 2. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-3 Nyquist Frequency Analog-Digital Converters The sampled nature of the ADC places a practical limit on the bandwidth of the input signal. If the sampling frequency is fS, and fB is the bandwidth of the input signal, then fB < 0.5fS which is simply the Nyquist relationship which states that to avoid aliasing, the sampling frequency must be greater than twice the highest signal frequency. Continuous time frequency response of the analog input signal. -fB 0 fB f Sampled data equivalent frequency response where fB < 0.5fS. fS2 fS -fB 0 fB fS-fB fS fS+fB 2fS-fB 2fS 2fS+fB f Case where fB > 0.5fS causing aliasing. fS 2 -fB 0 fS 2fS f Use of an antialiasing filter to avoid aliasing. Antialiasing Filter -fB 0 fB f fS 2 fS Fig. 10.5- CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-4 Classification of Analog-Digital Converters Analog-digital converters can be classified by the relationship of fB and 0.5fS and by their conversion rate. • Nyquist ADCs - ADCs that have fB as close to 0.5fS as possible. • Oversampling ADCs - ADCs that have fB much less than 0.5fS. Classification of Analog-to-Digital Converter Architectures Conversion Rate Nyquist ADCs Oversampled ADCs Slow Integrating (Serial) Very high resolution <14-16 bits Successive Medium Approximation1-bit Pipeline Algorithmic Moderate resolution <10-12 bits Fast Flash Multiple-bit Pipeline Folding and interpolating Low resolution < 6-8 bits CMOS Analog Circuit Design © P.E. Allen - 2010
  • 3. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-5 STATIC CHARACTERIZATION OF ANALOG-TO-DIGITAL CONVERTERS Digital Output Codes Digital Output Codes used for ADCs Decimal Binary Thermometer Gray Two’s Complement 0 000 0000000 000 000 1 001 0000001 001 111 2 010 0000011 011 110 3 011 0000111 010 101 4 100 0001111 110 100 5 101 0011111 111 011 6 110 0111111 101 010 7 111 1111111 100 001 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-6 Input-Output Characteristics Ideal input-output characteristics of a 3-bit ADC Infinite Resolution Characteristic Ideal 3-bit Characteristic 1 LSB 28 1 LSB 38 48 58 68 Analog Input Value Normalized to VREF 111 110 101 100 011 010 001 000 Digital Output Code 18 08 78 1.0 0.5 Quantization Noise LSBs 0.0 -0.5 Figure 10.5-3 Ideal input-output characteristics of a 3-bit ADC. vin VREF 88 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 4. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-7 Definitions • The dynamic range, signal-to-noise ratio (SNR), and the effective number of bits (ENOB) of the ADC are the same as for the DAC • Resolution of the ADC is the smallest analog change that distinguishable by an ADC. • Quantization Noise is the ±0.5LSB uncertainty between the infinite resolution characteristic and the actual characteristic. • Offset Error is the difference between the ideal finite resolution characteristic and actual finite resolution characteristic • Gain Error is the difference between the ideal finite resolution charact-eristic and actual finite resolution characteristic measured at full-scale input. This difference is proportional to the analog input voltage. 111 110 101 100 011 010 001 000 Digital Output Code vin VREF Digital Output Code Offset = 1.5 LSBs 111 110 101 100 011 010 001 000 08 Characteristic 18 Ideal 28 38 48 58 68 78 88 vin VREF Gain Error = 1.5LSBs Ideal Characteristic 08 18 28 38 48 (a.) (b.) Characteristic 58 Actual 68 78 88 Figure 10.5-4 - (a.) Example of offset error for a 3-bit ADC. (b.) Example of gain error for a 3-bit ADC. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-8 Integral and Differential Nonlinearity The integral and differential nonlinearity of the ADC are referenced to the vertical (digital) axis of the transfer characteristic. • Integral Nonlinearity (INL) is the maximum difference between the actual finite resolution characteristic and the ideal finite resolution characteristic measured vertically (% or LSB) • Differential Nonlinearity (DNL) is a measure of the separation between adjacent levels measured at each vertical step (% or LSB). DNL = (Dcx - 1) LSBs where Dcx is the size of the actual vertical step in LSBs. Note that INL and DNL of an analog-digital converter will be in terms of integers in contrast to the INL and DNL of the digital-analog converter. As the resolution of the ADC increases, this restriction becomes insignificant. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 5. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-9 Example of INL and DNL 111 110 101 100 011 010 001 000 08 INL = -1LSB 18 28 Characteristic INL = +1LSB 38 Ideal DNL = 0 LSB 48 DNL = +1LSB 58 Characteristic 68 Actual 78 88 vin VREF Digital Output Code Example of INL and DNL for a 3-bit ADC.) Fig.10.5-5 Note that the DNL and INL errors can be specified over some range of the analog input. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-10 Monotonicity A monotonic ADC has all vertical jumps positive. Note that monotonicity can only be detected by DNL. Example of a nonmonotonic ADC: 111 110 101 100 011 010 001 000 08 Characteristic 18 Actual 28 38 Characteristic 48 Ideal 58 DNL = -2 LSB 68 78 88 vin VREF Digital Output Code Fig. 10.5-6L If a vertical jump is 2LSB or greater, missing output codes may result. If a vertical jump is -1LSB or less, the ADC is not monotonic. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 6. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-11 Example 360-1 - INL and DNL of a 3-bit ADC Find the INL and DNL for the 3-bit ADC shown on the previous slide. Solution With respect to the digital axis: 1.) The largest value of INL for this 3-bit ADC occurs between 3/16 to 5/16 or 7/16 to 9/16 and is 1LSB. 2.) The smallest value of INL occurs between 11/16 to 12/16 and is -2LSB. 3.) The largest value of DNL occurs at 3/16 or 6/8 and is +1LSB. 4.) The smallest value of DNL occurs at 9/16 and is -2LSB which is where the converter becomes nonmonotonic. 111 110 101 100 011 010 001 000 08 Characteristic INL = +1LSB 18 Actual DNL = +1 LSB 28 38 Characteristic 48 Ideal 58 INL = -2LSB DNL = -2 LSB 68 78 88 vin VREF Digital Output Code Fig. 10.5-6DL CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-12 DYNAMIC CHARACTERISTICS OF ADCs What are the Important Dynamic Characteristics for ADCs? The dynamic characteristics of ADCs are influenced by: • Comparators - Linear response - Slew response • Sample-hold circuits • Circuit parasitics • Logic propagation delay CMOS Analog Circuit Design © P.E. Allen - 2010
  • 7. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-13 Comparator The comparator is the quantizing unit of ADCs. Open-loop model: + - V Av(s)Vi i VOS Ri Ro Vo V1 V2 Comparator Fig.10.5-7 Nonideal aspects: • Input offset voltage, VOS (a static characteristic) • Propagation time delay - Bandwidth (linear) Av(s) = Av(0) s c+1 = Av(0) sc+1 - Slew rate (nonlinear) T = C·V I (I constant) = V SlewRate CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-14 SAMPLE AND HOLD CIRCUITS Requirements of a Sample and Hold Circuit The objective of the sample and hold circuit is to sample the unknown analog signal and hold that sample while the ADC decodes the digital equivalent output. The sample and hold circuit must: 1.) Have the accuracy required for the ADC resolution, i.e. accuracy = 100% 2N 2.) The sample and hold circuit must be fast enough to work in a two-phase clock. For an ADC with a 100 Megasample/second sample rate, this means that the sample and hold must perform its function within 5 nanoseconds. 3.) Precisely sample the analog signal at the same time for each clock. An advantage of the sample and hold circuit is that it removes the precise timing requirements from the ADC itself. 4.) The power dissipation of the sample and hold circuit must be small. Unfortunately, the above requirements for accuracy and speed will mean that the power must be increased as the bits are increased and/or the clock period reduced. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 8. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-15 Sample-and-Hold Circuit Waveforms of a sample-and-hold circuit: Definitions: • Acquisition time (ta) = time required to acquire the analog voltage • Settling time (ts) = time required to settle to the final held voltage to within an accuracy tolerance Hold Sample Hold ta ts S/H Command vin*(t) Output of S/H valid for ADC conversion vin*(t) vin(t) vin(t) Time Amplitude Tsample = ta + ts Maximum sample rate = fsample(max) = 1 Fig.10.5-9 Tsample Other consideratons: • Aperture time= the time required for the sampling switch to open after the S/H command is initiated • Aperture jitter = variation in the aperture time due to clock variations and noise Types of S/H circuits: • No feedback - faster, less accurate • Feedback - slower, more accurate CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-16 Open-Loop, Buffered S/H Circuit Circuit: + - vin(t) φ vout(t) CH vin(t), vout(t) Switch Closed (sample) vout(t) vin(t) Switch Open (hold) vin(t), vout(t) Switch Closed (sample) Time Amplitude Fig.10.5-10 Attributes: • Fast, open-loop • Requires current from the input to charge CH • DC voltage offset of the op amp and the charge feedthrough of the switch will create dc errors CMOS Analog Circuit Design © P.E. Allen - 2010
  • 9. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-17 Settling Time Assume the op amp has a dominant pole at -a and a second pole at -GB. The unity-gain response can be approximated as, A(s) GB2 s2+GB·s+GB2 The resulting step response is, vout(t) = 1 - e-0.5GB·t sin 43 34 GB·t+ Defining the error as the difference between the final normalized value and vout(t), gives, Error(t) = = 1 - vout(t) = 43 e-0.5GB·t In most ADCs, the error is equal to ±0.5LSB. Since the voltage is normalized, 1 2N+1 = 43 e-0.5GB·ts e-0.5GB·ts = 4 3 2N Solving for the time, ts, required to settle with ±0.5LSB from the above equation gives ts = 2 GB ln 4 32N = 1 GB [1.3863N + 1.6740] Thus as the resolution of the ADC increases, the settling time for any unity-gain buffer amplifiers will increase. For example, if we are using the open-loop, buffered S/H circuit in a 10 bit ADC, the amount of time required for the unity-gain buffer with a GB of 1MHz to settle to within 10 bit accuracy is 2.473μs. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-18 Open-Loop, Switched-Capacitor S/H Circuit Circuit: C vin(t) vout (t) +- φ1d φ2 φ1 +- φ1d C φ2 φ1 + + vin(t) vout (t) + - φ2 φ1 C φ1d - - Switched capacitor S/H circuit. Differential switched-capacitor S/H Fig.10.5-11 • Delayed clock used to remove input dependent feedthrough. • Differential version has lower PSRR, cancellation of even harmonics, and reduction of charge injection and clock feedthrough CMOS Analog Circuit Design © P.E. Allen - 2010
  • 10. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-19 Open-Loop, Diode Bridge S/H Circuit Diode bridge S/H circuit: VDD Clock IB D1 D2 vIN(t) vOUT(t) D3 D4 Clock IB 060927-01 CH rd rd Blowthru Capacitor vIN(t) vOUT(t) CH rd rd RON = rd Sample phase - diodes forward biased. vIN(t) vOUT(t) CH ROFF = ∞ Hold phase - diodes reversed biased. MOS diode bridge S/H circuit: VDD Clock IB vIN(t) vOUT(t) M1 M2 M3 M4 Clock IB 060927-02 CH 1 gm 1 gm Blowthru Capacitor vIN(t) vOUT(t) CH 1 gm RON = 1/gm 1 gm Sample phase - MOS diodes forward biased. vIN(t) vOUT(t) CH ROFF = ∞ Hold phase - MOS diodes reversed biased. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-20 Practical Implementation of the Diode Bridge S/H Circuit vout(t) 060927-03 VDD IB IB D5 D1 D2 D3 D4 + IB 2 IB 2 M1 M2 Hold Sample VSS CH vout(t) vin(t) - 2IB D6 Practical implementation of the diode bridge sample and hold (sample mode). VDD IB IB D5 IB D1 D2 D3 2IB D4 + M1 M2 IB Hold Sample VSS CH vin(t) - 2IB D6 Hold mode. During the hold mode, the diodes D5 and D6 become forward biased and clamp the upper and lower nodes of the sampling bridge to the sampled voltage. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 11. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-21 Closed-Loop S/H Circuit Circuit: + - + - φ1 φ1 φ2 CH vout(t) vin(t) +- CH vin(t) vout(t) + - φ1 φ2 An improved version. Fig.10.5-13 Closed-loop S/H circuit. φ1 is the sample phase and φ2 is the hold phase. Attributes: • Accurate • First circuit has signal-dependent feedthrough • Slower because of the op amp feedback loop CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-22 Closed-Loop, Switched Capacitor S/H Circuits Circuit: φ1 φ2 vin(t) φ1d vout(t) - + CH Old charge (φ2) φ1 φ2d φ1d New charge (φ2) + + vin(t) vout(t) + - φ2 φ2 CH φ1 φ2d φ1d φ2 CH CH Old charge (φ2) CH - + φ2 φ1d φ1d φ2d φ1 CH CH - - φ1 φ2d 070616-02 Switched capacitor S/H circuit which autozeroes the op amp input offset voltage. New charge (φ2) A differential version that avoids large changes at the op amp output Attributes: • Accurate • Signal-dependent feedthrough eliminated by a delayed clock • Differential circuit keeps the output of the op amps constant during the 1 phase avoiding slew rate limits CMOS Analog Circuit Design © P.E. Allen - 2010
  • 12. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-23 Current-Mode S/H Circuit Circuit: VDD IB iin iout φ1 CH φ1 φ2 Fig.10.5-15 Attributes: • Fast • Requires current in and out • Good for low voltage implementations CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-24 Aperature Jitter in S/H Circuits Illustration: If we assume that vin(t) = Vpsint, then the maximum slope is equal to Vp. Therefore, the value of V is given as V = Analog Input dvin dt t = Vpt . vin(to) to Figure10.5-14 - Illustration of aperature jitter in an ADC. The rms value of this noise is given as V(rms) = dvin dt t = Clock Analog-Digital Converter Vpt 2 . vin Digital Output ΔV Aperature Jitter = Δt The aperature jitter can lead to a limitation in the desired dynamic range of an ADC. For example, if the aperature jitter of the clock is 100ps, and the input signal is a full scale peak-to-peak sinusoid at 1MHz, the rms value of noise due to this aperature jitter is 111μV(rms) if the value of VREF = 1V. t CMOS Analog Circuit Design © P.E. Allen - 2010
  • 13. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-25 DESIGN OF A SAMPLE AND HOLD AMPLIFIER Specifications Accuracy = 10 bits Clock frequency is 10 MHz Power dissipation 1mW Signal level is from 0 to 1V Slew rate 100V/μs with CL = 1pF Use 0.25μm CMOS Technology Parameters (Cox = 60.6x10-4 F/m2): Parameter Parameter Description Typical Parameter Value Symbol N-Channel P-Channel Units VT0 Threshold Voltage (VBS = 0) 0.5± 0.15 -0.5 ± 0.15 V K' Transconductance Para-meter (in saturation) 120.0 ± 10% 25.0 ± 10% μA/V2 Bulk threshold parameter 0.4 0.6 (V)1/2 Channel length modulation parameter 0.32 (L=Lmin) 0.06 (L 2Lmin) 0.56 (L=Lmin) 0.08 (L 2Lmin) (V)-1 2|F| Surface potential at strong inversion 0.7 0.8 V CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-26 Op Amp Design Gain: Gain error = 1 1+LoopGain 0.5 LSB = 1 211 Therefore, the op amp gain 211 = 2048 V/V Choose the op amp gain as 5000 V/V Gainbandwidth: For a dominant pole op amp with unity-gain feedback, the relationship between the gain-bandwidth (GB), accuracy (N) and speed (ts) is ts = N+1 GB ln(2) = 0.693 N+1 GB Therefore, if ts 0.5 Tclock = 50 ns (choose ts = 10 ns). For N = 10, the gain-bandwidth is GB = 0.762x109 = 120 MHz Dominant pole is 24 kHz and with an output capacitance of 1pF this means the output resistance of the op amp must be 6.6 M. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 14. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-27 Op Amp Design – Continued The previous specifications suggest a self-compensated op amp. The gain and output resistance should be easy to achieve with a cascaded output. A folded-cascode op amp is proposed for the design. In order to have the 0-1V signal range, a p-channel, differential input is selected. This will give the input 0-1V range. The output will effectively be 0-1V with the unity gain feedback around the op amp. M10 M11 VPB1 M3 I3 − vIN vOUT CL 061021-01 VDD = 2.5V VPB2 M8 M9 I7 VNB2 M6 M7 I4 VNB1 I5 I6 M4 M5 + M1 M2 I1 I2 Bias Currents: The 100V/μs slew rate requires I3 = 100μA. Setting I4 = I5 = 125μA gives a power dissipation of 0.875mW with VDD = 2.5V. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-28 Op Amp Design – Continued Transistor sizes: Design M4-M7 to give a saturation voltage of 0.1V with 125μA. W4 L4 = W5 L5 = W6 L6 = W7 L7 = 2ID Kn'·VDS(sat)2 = 2·125 120·0.01 200 Since the upper swing is not as important, choose a saturation voltage of 0.25 for M8 – M11. W8 L8 = W9 L9 = W10 L10 = W11 L11 = 2ID Kp'·VDS(sat)2 = 2·125 25·0.0625 = 160 To get the GB of 120 MHz, this implies the gm of M1 and M2 is gm = GB·CL = (120x106·2)(10-12) = 762 μS W1 L1 = W2 L2 = gm 2 2IDKp' = 762·762 2·25·50 = 232 Let the upper input common mode voltage be 1.5V which gives the W/L of M3 as, 1V = VSG1 + VSD3 = 0.631 + VSD3 VSD3 = 0.369V W3 L3 60 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 15. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-29 Op Amp Design – Continued We now need to check the output resistance and the gain to make sure the specifications are satisfied. Let us choose twice minimum channel length to keep the capacitive parasitics minimized and not have the output resistance too small. Therefore at quiescent conditions, rds5 = 133k, rds7 = 222k, gm7 = 1.935mS and rds2 = 250k Routdown (rds5||rds2)gm7rds7 = 37.29M rds9 =rds11 = 167k, and gm11 = 1.697mS Routup rds11gm9rds9 = 47.33M Rout 20.86M The low frequency gain is, Av gm1Rout = 762μS·20.86M = 15,886 V/V The frequency response will be as shown: 24kHz 120MHz log10f 061023-02 Gain 15,886 5,000 7.55kHz 1 CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-30 Op Amp Bias Voltages We also need to design the bias voltages VNB1, VNB2, VPB1 and VPB2. This can be done using the following circuit: Note, the W/L of M3, M4 and M7 will be 6 so that a current of 10μA gives 100μA in M3 of the op amp. Also, W/L of M1 and M5 will be 16 so a current of 10μA gives 125μA in M4 and M5 of the op amp. If M2 is 4 times larger than M1, which gives a W/L of 64 for M2. Under these conditions, I2 = I1 = 1 2ß1R2 R = 106 2·120·16·10 = 5.1k The extra 40A brings the power dissipation to 0.975mW which is still in specification. The W/L of M6 and M8 are designed as follows: VGS8 = VT + 2VON VGS8 - VT = 0.2V = M3 M4 10μA 10μA M1 M2 2·10 VDD 10μA M6 M5 R 120·(W8/L8) VPB1 VPB2 VNB2 VNB1 M8 061021-02 M7 10μA W8 L8 = 4.167 VSG6 = |VT| + 2VON VSG6 - |VT| = 0.5V = 2·10 25·(W6/L6) W6 L6 = 3.20 CMOS Analog Circuit Design © P.E. Allen - 2010
  • 16. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-31 Switch and Hold Capacitor Design Switch: Since the signal amplitude is from 0 to 1V, a single NMOS switch should be satisfactory. The resistance of a minimum size NMOS switch is, RON(worst case) 1 Kn'(W/L)(VGS-VT) = 106 120(1)(1.5-0.5) = 8.33k For a CH = 1pf, the time constant is 8 ns. This is too close to the 50 ns so let us increase the switch size to 0.5μm/0.25μm which gives a time constant of 4ns. Therefore, the W/L ratio of the NMOS switch is 0.5μm/0.25μm and the hold capacitor is 1pf. Check the error due to channel injection and clock feedthrough- If we assume the clock that rises and falls in 1ns, then a 0.5μm/0.25μm switch works in the fast transition region. The channel/clock error can be calculated as: Verror = - Cchannel W·CGDO+ 2 CL VHT- V 3 HT 6U·CL - W·CGDO CL (VS+2VT -VL) CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-32 Switch and Hold Capacitor Design – Continued Assuming CGDO is 200x10-12 F/m we can calculate VHT as 0.8131V. Thus, Verror = - 1x10-12 100x10-18+0.5(7.57x10-16) 0.105x10-3 15x10-3 - 0.8131- 100x10-18 1x10-12 (1+1-0) = -0.586mV For a 1volt signal with 10 bit accuracy, the error must be less than 1LSB which is 0.967mV. The channel/clock error is close to this value and one may have to consider using a CMOS switch or a dummy switch to reduce the error. CMOS Analog Circuit Design © P.E. Allen - 2010
  • 17. Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-33 Design Summary At this point, the analog designer understands the weaknesses and strengths of the design. The next steps will not be done but are listed below: 1.) Simulation to confirm and explore the hand-calculated performance 2.) Layout of the op amp, hold capacitor and switch. 3.) Verification of the layout 4.) Extraction of the parasitics from the layout 5.) Resimulation of the design. 6.) Check for sensitivity to ESD and latchup. 7.) Select package and include package parasitics in simulation. CMOS Analog Circuit Design © P.E. Allen - 2010 Lecture 360 – Characterization of ADCs and Sample and Hold Circuits (3/29/10) Page 360-34 SUMMARY • An ADC is by nature a sampled data circuit (cannot continuously convert analog into digital) • Two basic types of ADCs are: - Nyquist – analog bandwidth is as close to the Nyquist frequency as possible - Oversampled – analog bandwidth is much smaller than the Nyquist frequency • The active components in an ADC are the comparator and the sample and hold circuit • A sample and hold circuit must have at least the accuracy of 100%/2N • Sample and hold circuits are divided into two types: - Open loop which are fast but not as accurate - Close loop which are slower but more accurate • An example of designing a sample and hold amplifier was given to illustrate the electrical design process for CMOS analog circuits CMOS Analog Circuit Design © P.E. Allen - 2010