SPICE MODEL of TPCA8057-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPCA8057-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID(A)
gfs (S)
%Error
Measurement Simulation
4 47.000 48.518 3.23
8 66.000 67.231 1.87
16 91.500 92.443 1.03
32 126.000 125.801 -0.16
48 152.000 149.741 -1.49
64 173.000 168.898 -2.37

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
16A
32A
48A
64A
80A
V1
0Vdc
V2
10
0
V3
0
U1
TPCA8057-H
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
ID(A)
VGS (V)
%Error
Measurement Simulation
2 2.430 2.469 1.58
4 2.500 2.517 0.66
8 2.600 2.586 -0.56
16 2.700 2.686 -0.54
32 2.830 2.832 0.06
48 2.920 2.948 0.95
64 3.000 3.048 1.60
80 3.080 3.138 1.90

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0
V3
0
VDS
0Vdc
V1
10
U1
TPCA8057-H
V_VDS
0V 10mV 20mV 30mV 40mV 50mV
I(V3)
0A
7A
14A
21A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=21 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 2.000 2.000 0.00

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Time*1mA
0 14n 28n 42n 56n 70n
V(W1:2)
0V
4V
8V
12V
VDD
24
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
42
0
Dmod
D1
0
U1
TPCA8057-H
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24 (V), ID=42 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
Qgs nc 13.000 12.973 -0.21
Qgd nc 7.700 7.692 -0.11
Qg nc 61.000 60.563 -0.72

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Capacitance Characteristics
Simulation result
Comparison table
VDS(V)
Cbd (pF)
%Error
Measurement Simulation
0.1 2170.000 2175.000 0.23
0.2 2060.000 2061.000 0.05
0.5 1810.000 1798.500 -0.64
1 1520.000 1513.100 -0.45
2 1200.000 1190.500 -0.79
5 800.000 795.200 -0.60
10 565.000 560.800 -0.74
20 390.000 387.200 -0.72
30 316.000 309.910 -1.93
Simulation
Measurement

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VDD
15.09Vdc
0
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
R2
4.7
R14.7L130nH
L2
50nH
U1
TPCA8057-H
RL
0.71
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:4) V(U1:5)/1.509
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=21 (A), VDD=15 (V), VGS=10/0 (V)
Parameter Unit Measurement Simulation %Error
ton ns 14.000 14.016 0.11

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V_V2
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
20A
40A
60A
80A
100A
V2
2
V1
0
V3
0Vdc
U1
TPCA8057-H
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.6V
2.8V
2.9V
3V
3.1V
3.2V
3.3V
3.4V4V
4.5V
5V
6V
8V
10V

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
1.0A
10A
100A
1.0KA
VDS
0
Vsense
0Vdc
VGS
0Vdc
U1
TPCA8057-H
FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR(A)
-VDS (V)
%Error
Measurement Simulation
1 0.6780 0.6746 -0.50
2 0.6900 0.6910 0.14
5 0.7130 0.7168 0.53
10 0.7400 0.7418 0.24
20 0.7750 0.7732 -0.23
50 0.8300 0.8280 -0.24
100 0.8870 0.8876 0.07
125 0.9120 0.9126 0.06

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Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
V1
TD = 75ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.35v
TR = 10ns
V2 = 10.7v
R1
50
0
U1
DTPCA8057-H_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 24.000 24.318 1.33
trb ns 96.000 95.768 -0.24
trr ns 120.000 120.086 0.07

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Reverse Recovery Characteristics Reference
Trj = 24.00 (ns)
Trb = 96.00 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement