SPICE MODEL of 2SK3658 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK3658
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
0.5 1.46 1.426 -2.33
1 1.96 1.935 -1.28
2 2.56 2.581 0.82
4 3.33 3.369 1.17
VDS=10V

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V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
G
VGS
0
VDS
10V
U1
2SK3658
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
0.1 2.000 2.015 0.75
0.2 2.140 2.138 -0.09
0.5 2.400 2.391 -0.37
1 2.700 2.688 -0.44
2 3.120 3.129 0.29
5 4.120 4.082 -0.92
VDS=10V

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G
VGS
10V
0
VDS
U1
2SK3658
V_VDS
0V 48mV 96mV 144mV 192mV 230mV
-I(VDS)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(A), ID=1(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 230 230.140 0.06

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V_VDS
0V 2V 4V 6V 8V 10V
-I(VDS)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
G
VGS
0
VDS
U1
2SK3658
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.5V
3.0
3.5
3.75
4
10, 8
6
5

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 150 150 0.00
0.5 120 118.8 -1.00
1 98 100 2.04
5 60 59 -1.67
10 48 45.82 -4.54
50 24 24.8 3.33
Simulation
Measurement

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Time*1m
0s 0.5ns 1.5ns 2.5ns 3.5ns 4.5ns
V(W1:3)
0V
2V
4V
6V
8V
10V
12V
U1
2SK3658
0
D1
DMod
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
ID
2A
VDD
48V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=48(V), VGS=10(V), ID=2(A)
Parameter Unit Measurement Simulation %Error
Qgs nc 0.98 0.978 -0.20
Qgd nc 1.4 1.399 -0.07
Qg nc 5 4.99 -0.20

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Time
1.90us 2.10us 2.30us 2.50us 2.70us
V(G) V(D)/3
0V
5V
10V
15V
20V
D
U1
2SK3658
V1TD = 2u
TF = 20n
PW = 5u
PER = 500u
V1 = 0
TR = 20n
V2 = 20 VCC
30
0
RL
30
L2
50nH
12
L1
30nH
12
R2
50
G
R1
50
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=0/10(V), ID=1(A)
Parameter Unit Measurement Simulation %Error
ton ns 210 210.217 0.10

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V_VDS
0V -0.4V -0.8V -1.2V -1.6V -2.0V -2.4V
I(VDS)
100mA
1.0A
10A
VDS
0
U1
2SK3658
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.667 0.670 0.45
0.2 0.720 0.718 -0.28
0.5 0.800 0.795 -0.63
1 0.867 0.876 1.04
2 1.000 0.997 -0.30
5 1.293 1.294 0.08

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Time
8.4us 9.2us 10.0us 10.8us 11.6us 12.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 100ns
TF = 15ns
PW = 10us
PER = 1ms
V1 = -9.2V
TR = 15ns
V2 = 10.7V
R1
50
U1
D2SK2658_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 18 17.846 -0.86
trb ns 272 271.646 -0.13
trr ns 290 289.492 -0.18

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Reverse Recovery Characteristics Reference
Trj = 18(ns)
Trb = 272(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
U1
2SK3658
R1
1G
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

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Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ = 24.75(V) at IZ=1mA
Measurement