SPICE MODEL of TPCP8205-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPCP8205-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
8
16
24
32
40
0.0 4.0 8.0 12.0 16.0 20.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
1 10.700 10.327 -3.49
2 14.500 13.990 -3.52
5 21.000 20.405 -2.83
10 27.500 26.535 -3.51
20 34.500 33.690 -2.35

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4
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
10
0
U1
TPCP8205-H
V3
0Vdc

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5
0.00
4.00
8.00
12.00
16.00
20.00
0.0 1.0 2.0 3.0 4.0 5.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
1 2.750 2.787 1.36
2 2.870 2.869 -0.02
5 3.030 3.043 0.41
10 3.200 3.254 1.70
20 3.500 3.584 2.41

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TPCP8205-H
V_VDS
0V 20mV 40mV 60mV 80mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
3.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 3.3A, VGS = 10V Measurement Simulation %Error
RDS (on) m 20.00 20.00 0.00

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VDD
24
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6.5
0
D2
Dbreak
U1
TPCP8205-H
Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:3)
0V
3V
6V
9V
12V
15V
18V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=24V, ID=6.5A,
VGS=10V
Unit Measurement Simulation %Error
Qgs nC 3.000 3.021 0.69
Qgd nC 2.300 2.292 -0.36
Qg nC 13.800 13.611 -1.37

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Capacitance Characteristic
Simulation Result
VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.100 395.000 396.810 0.46
0.200 380.000 377.960 -0.54
0.500 335.000 334.180 -0.24
1.000 285.000 286.000 0.35
2.000 230.000 230.500 0.22
5.000 160.000 160.400 0.25
10.000 118.000 117.270 -0.62
20.000 86.000 84.130 -2.17
30.000 67.000 68.920 2.87
Simulation
Measurement

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9
0
VDD
15VdcV2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
U1
TPCP8205-H
RL
4.5
Time
0.94us 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
V(U1:2) V(U1:7)/1.5
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3.3A, VDD=15V
VGS=0/10V
Unit Measurement Simulation %Error
ton ns 11.000 10.785 -1.95

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V2
5V1
0
0
V3
0Vdc
U1
TPCP8205-H
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=3V
3.3
3.2
3.5
3.4
3.6
3.1
3.73.8
4
4.5
10

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VSD
0
Vsense
0Vdc
U1
TPCP8205-H
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR (A)
VSD (V)
%Error
Measurement Simulation
0.1 0.6500 0.6505 0.08
0.2 0.6750 0.6746 -0.07
0.5 0.7100 0.7093 -0.10
1 0.7400 0.7405 0.07
2 0.7800 0.7804 0.06
5 0.8600 0.8605 0.06
10 0.9600 0.9595 -0.05
20 1.1200 1.1205 0.04

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Time
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 14.400 14.244 -1.08
trb ns 20.000 20.193 0.97
trr ns 34.400 34.437 0.11
V1
TD = 35ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
R1
50
0
U1
DTPCP8205-H_P

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Reverse Recovery Characteristic Reference
Trj=14.40(ns)
Trb=20.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement