This document is a detailed device modeling report for the TPCA8065-H MOSFET by Bee Technologies, including extensive electrical characterization data such as transconductance, gate charge, and capacitance under various conditions. It provides simulation results alongside measurement data, indicating a range of % errors and characterizing the performance of the component. Overall, the report serves as a comprehensive resource for understanding the behavior and specifications of the MOSFET in circuit applications.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPCA8065-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
5 25 24.384 -2.46
10 35 34.432 -1.62
20 49 48.580 -0.86
30 59 59.389 0.66
VDS=10V

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V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
10A
20A
30A
VGS
0
VDS
10VU1
TPCA8065-H
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 2.500 2.427 -2.92
2 2.580 2.502 -3.02
5 2.720 2.653 -2.46
10 2.860 2.823 -1.29
20 3.050 3.064 0.46
30 3.230 3.249 0.59
VDS=10V

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VGS
10V
0
VDS
U1
TPCA8065-H
V_VDS
0V 20mV 40mV 60mV 80mV
-I(VDS)
0A
4.0A
8.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=8(A), VGS =10(V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 9.4 9.4 0

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Time*1m
0s 4ns 8ns 12ns 16ns 20ns 24ns
V(W1:3)
0V
4V
8V
12V
0
D1
DMod
-
+
W1
ION = 0
IOFF = 1mA
W
IGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
ID
16A
VDD
24V
U1
TPCA8065-H
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24(V), ID=16(A), VGS=10(V)
Parameter Unit Measurement Simulation %Error
Qgs nc 4.4 4.48 1.82
Qgd nc 2.1 2.176 3.62
Qg nc 20 19.174 -4.13

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 775 772 -0.39
0.5 580 600 3.45
1.0 515 491 -4.66
5.0 250 259 3.60
10.0 182 188 3.30
30.0 116 111 -4.31
Simulation
Measurement

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Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(G) V(D)/1.5
0V
5V
10V
15V
20V
D
U1
TPCA8065-H
V1TD = 2u
TF = 20n
PW = 5u
PER = 500u
V1 = 0
TR = 20n
V2 = 20 VCC
15
0
RL
1.88
L2
50nH
12
L1
30nH
12
R2
4.7
G
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=8(A), VDD=15(V), VGS=10/0(V)
Parameter Unit Measurement Simulation %Error
ton ns 8.2 8.129 -0.87

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V_VDS
0V 0.4V 0.8V 1.2V 1.6V 2.0V
-I(VDS)
0A
4A
8A
12A
16A
20A
VGS
0
VDS
U1
TPCA8065-H
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.6V
2.8
2.9
3.0
3.1
3.2
3.3
10, 8, 6, 5
4.5
3.4
4

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VDS)
100mA
1.0A
10A
100A
VDS
0
U1
TPCA8065-H
FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.651 0.651 0.00
0.2 0.671 0.671 0.00
0.5 0.697 0.698 0.14
1 0.721 0.720 -0.14
2 0.749 0.745 -0.53
5 0.789 0.789 0.00
10 0.839 0.840 0.12
20 0.918 0.922 0.44
30 1.000 0.997 -0.30

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Time
9.88us 9.96us 10.04us 10.12us 10.20us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 10us
PER = 1ms
V1 = -9.2V
TR = 10ns
V2 = 10.7V
R1
50
U1
DTPCA8065-H_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 14.4 14.384 -0.11
trb ns 24.8 24.817 0.07
trr ns 39.2 39.201 0.00

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Reverse Recovery Characteristics Reference
Trj = 14.4(ns)
Trb = 24.8(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement