SPICE MODEL of TPCA8064-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCA8064-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 21.000 21.395 1.88
4 29.700 29.967 0.90
8 42.000 41.812 -0.45
16 58.500 58.031 -0.80
24 71.000 70.073 -1.31
32 81.500 79.963 -1.89

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
8A
16A
24A
32A
40A
V1
0Vdc
V2
10
0
V3
0
U1
TPCA8064-H
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
ID(A)
VGS (V)
%Error
Measurement Simulation
1 2.470 2.485 0.60
2 2.530 2.539 0.37
4 2.600 2.617 0.66
8 2.720 2.728 0.31
16 2.870 2.889 0.64
24 2.990 3.013 0.78
32 3.100 3.120 0.64
40 3.200 3.215 0.46

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0
V3
0
VDS
0Vdc
V1
10
U1
TPCA8064-H
V_VDS
0V 20mV 40mV 60mV
I(V3)
0A
2A
4A
6A
8A
10A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=10 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 5.800 5.800 0.00

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Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:2)
0V
4V
8V
12V
VDD
24
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
20
0
Dmod
D1
0
U1
TPCA8064-H
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24 (V), ID=20 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
Qgs nc 5.100 5.115 0.29
Qgd nc 2.500 2.518 0.70
Qg nc 23.000 19.380 -15.74

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Capacitance Characteristics
Simulation result
Comparison table
VDS(V)
Cbd (pF)
%Error
Measurement Simulation
0.1 860.000 859.000 -0.12
0.2 800.000 799.000 -0.13
0.5 675.000 675.400 0.06
1 555.000 556.800 0.32
2 440.000 435.900 -0.93
5 296.000 298.130 0.72
10 222.000 218.000 -1.80
20 160.000 157.738 -1.41
30 133.000 130.116 -2.17
Simulation
Measurement

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VDD
15.05Vdc
U1
TPCA8064-H
0
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
R2
4.7
R14.7L130nH
L2
50nH
RL
1.5
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:4) V(U1:5)/1.505
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=10 (A), VDD=15 (V), VGS=10/0 (V)
Parameter Unit Measurement Simulation %Error
ton ns 9.200 9.219 0.20

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V_V2
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
10A
20A
30A
40A
50A
V2
2
V1
0
V3
0Vdc
U1
TPCA8064-H
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.8V
V
3V
3.2V
3.4V
3.6V4V
4.5V
5V
6V
8V
10V

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
100mA
1.0A
10A
100A
VDS
0
U1
TPCA8064-H
Vsense
0Vdc
VGS
0Vdc
FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Comparison Graph
Simulation result
Comparison table
IDR(A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.6350 0.6338 -0.19
0.2 0.6550 0.6553 0.05
0.5 0.6830 0.6841 0.16
1 0.7050 0.7064 0.19
2 0.7300 0.7296 -0.06
5 0.7650 0.7633 -0.22
10 0.7950 0.7938 -0.15
20 0.8300 0.8331 0.37
40 0.8900 0.8878 -0.25
60 0.9300 0.9307 0.08

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Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
V1
TD = 30ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.35v
TR = 10ns
V2 = 10.7v
R1
50
0
U1
TPCA8064-H
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 15.200 15.339 0.91

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Reverse Recovery Characteristics Reference
Trj =15.20 (ns)
Trb = 27.20 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement