This document provides a summary of simulation results and measurements for the MOSFET component TPCA8059-H. It includes 14 pages summarizing the MOSFET and body diode model parameters, as well as simulation versus measurement comparisons for characteristics including transconductance, Vgs-Id, Rds(on), gate charge, capacitance, switching time, output, forward current, and reverse recovery. The summaries include circuit diagrams, test conditions, parameters measured, and percent errors between simulation and measurement results.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCA8059-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 31.500 31.906 1.29
6 53.500 53.957 0.85
12 74.600 74.580 -0.03
24 103.000 102.200 -0.78
36 124.000 122.258 -1.40
48 142.000 138.457 -2.50

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4
V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
12A
24A
36A
48A
60A
V1
0Vdc
V2
10
0
V3
0
U1
TPCA8059-H
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
Comparison Graph
Simulation result
Comparison table
ID(A)
VGS (V)
%Error
Measurement Simulation
1 2.430 2.463 1.34
2 2.490 2.499 0.37
6 2.580 2.592 0.47
12 2.670 2.685 0.57
24 2.800 2.821 0.74
36 2.900 2.928 0.95
48 2.975 3.020 1.50
60 3.050 3.102 1.71

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6
0
V3
0
VDS
0Vdc
V1
10
U1
TPCA8059-H
V_VDS
0V 10mV 20mV 30mV 40mV 50mV
I(V3)
0A
4A
8A
12A
16A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=16 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 2.900 2.900 0.00

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7
Time*1mA
0 10n 20n 30n 40n 50n
V(W1:2)
0V
4V
8V
12V
VDD
24
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
32
0
Dmod
D1
0
U1
TPCA8059-H
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24 (V), ID=32 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
Qgs nc 8.500 8.515 0.18
Qgd nc 6.500 6.485 -0.22
Qg nc 41.000 35.292 -13.92

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8
Capacitance Characteristics
Simulation result
Comparison table
VDS(V)
Cbd (pF)
%Error
Measurement Simulation
0.1 1560.000 1562.000 0.13
0.2 1470.000 1468.000 -0.14
0.5 1260.000 1259.600 -0.03
1 1050.000 1045.300 -0.45
2 820.000 814.600 -0.66
5 545.000 543.330 -0.31
10 385.000 385.700 0.18
20 275.000 269.180 -2.12
30 220.000 217.105 -1.32
Simulation
Measurement

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9
VDD
15.09Vdc
0
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
R2
4.7
R14.7L130nH
L2
50nH
U1
TPCA8059-H
RL
0.94
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:4) V(U1:5)/1.509
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=16 (A), VDD=15 (V), VGS=10/0 (V)
Parameter Unit Measurement Simulation %Error
ton ns 11.000 11.014 0.13

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10
V_V2
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
10A
20A
30A
40A
50A
V2
2
V1
0
V3
0Vdc
U1
TPCA8059-H
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.7V
2.9V
3V
3.1V
3.2V3.3V
4V
4.5V
8V
10V
6V
5V

11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
100mA
1.0A
10A
100A
VDS
0
Vsense
0Vdc
VGS
0Vdc
U1
TPCA8059-H
FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12
Comparison Graph
Simulation result
Comparison table
IDR(A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.6200 0.6206 0.10
0.2 0.6400 0.6402 0.04
0.5 0.6670 0.6665 -0.08
1 0.6880 0.6867 -0.19
2 0.7080 0.7077 -0.04
5 0.7370 0.7381 0.15
10 0.7650 0.7653 0.03
20 0.8000 0.8000 0.00
40 0.8500 0.8496 -0.05
60 0.8900 0.8901 0.01

13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13
Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
V1
TD = 27ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.35v
TR = 10ns
V2 = 10.7v
R1
50
0
U1
TPCA8059-H
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 19.200 19.034 -0.86

14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
14
Reverse Recovery Characteristics Reference
Trj = 19.20 (ns)
Trb = 48.80 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement