SPICE MODEL of C2D10120D (Professional Model) in SPICE PARK
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SPICE MODEL of C2D10120D (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of C2D10120D (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C2D10120D MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. Circuit Configuration PIN1 PIN2 CASE PIN3 U1 C2D10120D_P PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 C2D10120D_P 0Vdc 0 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result 10 Measurement 9 Simulation 8 FORWARD CURRENT: IF(A) 7 6 5 4 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.5 1.0000 1.0074 0.74 1.0 1.0900 1.0815 -0.78 2.0 1.2200 1.2119 -0.66 4.0 1.4500 1.4546 0.32 6.0 1.6800 1.6899 0.59 8.0 1.9200 1.9222 0.11 10.0 2.1600 2.1528 -0.33 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result 400p 350p 300p 250p 200p 150p 100p 50p 0 1.0V 10V 100V 1.0KV I(V2)/(400V/500n) V(N36015) Evaluation Circuit V2 0Vdc V2 = 400 V1 V1 = 0 TD = 0 U1 TR = 500ns C2D10120D_P TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 400 Measurement Simulation 350 300 CAPACITANCE: C(pF) 250 200 150 100 50 0 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 1 343.000 347.409 1.29 2 295.000 295.714 0.24 5 219.000 220.865 0.85 10 168.000 169.089 0.65 20 128.000 126.476 -1.19 50 85.000 84.427 -0.67 100 61.000 61.615 1.01 200 45.000 44.889 -0.25 400 33.000 32.620 -1.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Characteristic Circuit Simulation Result 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA 20uA 0A 0V 0.5KV 1.0KV 1.5KV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 C2D10120D_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Comparison Graph Circuit Simulation Result 200 Measurement 180 Simulation 160 REVERSE CURRENT:IR(uA ) 140 120 100 80 60 40 20 0 0 500 1000 1500 REVERSE VOLTAGE：VR(V) Simulation Result IR(uA) VR(V) Error (%) Measurement Simulation 300 0.0110 0.0114 3.35 500 0.0500 0.0512 2.32 700 0.2900 0.2842 -1.99 900 1.5000 1.5120 0.80 1000 3.5000 3.4902 -0.28 1100 8.0000 8.0263 0.33 1200 19.0000 18.5080 -2.59 1300 41.0000 42.6780 4.09 1400 97.0000 98.4300 1.47 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010