SPICE MODEL of IDV02S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDV02S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc IDV02S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph
Circuit Simulation Result
3
Measurement
Simulation
FORWARD CURRENT: IF(A)
2
1
0
0 1 2 3 4
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.1 0.910 0.920 1.11
0.2 0.980 0.990 1.05
0.5 1.150 1.141 -0.80
1 1.360 1.349 -0.85
2 1.740 1.728 -0.70
3 2.080 2.094 0.66
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
60p
55p
50p
45p
40p
35p
30p
25p
20p
15p
10p
5p
0
1.0V 10V 100V 600V
I(V2)/(600V/500n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1 U1
V1 = 0 IDV02S60C
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
60
Measurement
Simulation
45
CAPACITANCE: C(pF)
30
15
0
1 10 100 1000
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
1 59.980 59.833 -0.25
2 53.200 53.460 0.49
5 41.100 41.266 0.40
10 31.000 31.057 0.18
20 22.400 22.333 -0.30
50 14.900 14.812 -0.59
100 11.600 11.680 0.69
200 9.890 9.965 0.76
600 8.800 8.746 -0.61
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Characteristic
Circuit Simulation Result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(R1)
V_V1
Evaluation Circuit
R1
100m
V1 U1
0Vdc IDV02S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Comparison Graph
Circuit Simulation Result
1.E-05
Measurement
Simulation
1.E-06
REVERSE CURRENT:IR(A)
1.E-07
1.E-08
1.E-09
1.E-10
100 200 300 400 500 600
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(A)
VR(V) Error (%)
Measurement Simulation
100 1.44E-09 1.50E-09 4.40
200 2.90E-09 3.00E-09 3.29
300 6.20E-09 6.34E-09 2.20
400 1.85E-08 1.84E-08 -0.51
500 6.25E-08 6.28E-08 0.54
600 2.30E-07 2.31E-07 0.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010