SPICE MODEL of XBS203V17R (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS203V17R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS203V17R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Forward Current:IF (A)
1
0.1
0.01
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.165 0.164 -0.518
0.02 0.185 0.182 -1.476
0.05 0.205 0.207 0.785
0.1 0.225 0.226 0.280
0.2 0.245 0.246 0.304
0.5 0.275 0.276 0.369
1 0.305 0.305 -0.036
2 0.345 0.345 -0.083
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
1.0n
0.8n
0.6n
0.4n
0.2n
0
1V 10V 20V 30V
I(V2)/(30V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 30 V1 U1
V1 = 0 XBS203V17R_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
800
600
400
200
0
1 11 21
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 280.000 276.785 -1.15
5 169.000 171.769 1.64
10 120.000 121.741 1.45
15 96.000 96.370 0.39
20 82.000 80.781 -1.49
25 71.000 70.077 -1.30
30 63.000 62.270 -1.16
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.0us 1.4us 1.8us 2.2us 2.6us 3.0us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.16V
V1 = -0.85V
TD = 0ns V1 U1
TR = 1ns XBS203V17R_P
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 70.000 71.151 1.64
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
0V 10V 20V 30V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS203V17R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Reverse Current:IR (mA)
1.00
0.10
0.01
0 10 20 30
Reverse Voltage:VR (V)
Simulation Result
IR (mA)
VR (V) %Error
Measurement Simulation
1 0.0300 0.0306 1.96
5 0.0540 0.0533 -1.29
10 0.0780 0.0769 -1.43
15 0.1000 0.1011 1.08
20 0.1300 0.1323 1.74
25 0.1800 0.1768 -1.77
30 0.2400 0.2411 0.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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