Datasheet of 2SJ374, SHINDENGEN,Power MOSFET

1. SHINDENGEN
60V Series Power MOSFET P-Channel Enhancement type
2SJ374 OUTLINE DIMENSIONS
Case : FTO-220
( F20F6P ) (Unit : mm)
-60V -20A
FEATURES
•œ GS= 4V drive
V
•œ
Built-in ZD for Gate Protection
•œ
Avalanche resistance guaranteed
APPLICATION
•œDC/DC converters
•œ
Non-Isolated DC-DC Converter
•œ
Power management
•œ
Motor & Solenoid Drive of
Office Equipment
•œ
Mobile Gear
RATINGS
•œAbsolute Maximum Ratings • = 25•Ž•j
Tc
i
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55•`150 •Ž
Channel Temperature Tch 150
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGSS •}20
Continuous Drain Current•DC•j
i ID -20
Continuous Drain Current•Peak)
i IDP Pulse width•…10ƒÊs, Duty cycle•…1/100
-80 A
Continuous Source Current•DC•j
i IS -20
Total Power Dissipation PT 50 W
Single Avalanche Current IAS T ch= 25•Ž -20 A
Dielectric Strength Vdis Terminals to case,• AC 1 minute
@ 2 kV
Mounting Torque TOR •i
Recommended torque • N¥m •j
F0.3 0.5 N¥m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2. 60V Series Power MOSFET 2SJ374 ( F20F6P )
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = -1mA, VGS = 0V -60 V
Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -100 μA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±10
Forward Tranｓconductance gfs ID = -10A, VDS = -10V 10 14 S
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = -10A, VGS = -10V 0.05 0.07 Ω
Gate Threshold Voltage VTH ID = -1mA, VDS = -10V -1.0 -1.5 -2.0 V
Source-Drain Diode Forward Voltage VSD IS = -10A, VGS = 0V -1.5
Thermal Resistance θjc junction to case 2.50 ℃/Ｗ
Total Gate Charge Qg VDD = -48V, VGS = -10V, ID = -20A -87 nC
Input Capacitance Ciss 2050
Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0V, f = 1MHZ 520 pF
Output Capacitance Coss 1050
Turn-On Time ton ID = -10A, RL = 3Ω, VGS = -10V 160 320 ns
Turn-Off Time toff 700 1400
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

3. 2SJ374 Transfer Characteristics
-40
-35 Tc = −55°C
25°C
-30 100°C
150°C
Drain Current ID [A]
-25
-20
-15
-10
-5 VDS = −5V
pulse test
TYP
0
0 -2 -4 -6 -8 -10
Gate-Source Voltage VGS [V]

4. 2SJ374 Static Drain-Source On-state Resistance
1000
Static Drain-Source On-state Resistance RDS(ON) [mΩ]
100
ID = −10A
VGS = −10V
pulse test
TYP
10
-50 0 50 100 150
Case Temperature Tc [°C]

5. 2SJ374 Gate Threshold Voltage
-2.5
-2
Gate Threshold Voltage VTH [V]
-1.5
-1
-0.5
VDS = −10V
ID = −1mA
TYP
0
-50 0 50 100 150
Case Temperature Tc [°C]

6. 2SJ374 Safe Operating Area
-100
10µs
100µs
200µs
R DS(ON)
limit
-10
Drain Current ID [A]
1ms
10ms
-1
DC
Tc = 25°C
Single Pulse
-0.1
-1 -10 -100
Drain-Source Voltage VDS [V]

7. 2SJ374 Transient Thermal Impedance
100
10
1
0.1
Transient Thermal Impedance θjc(t) [°C/W]
0.01
10-5 10-4 10-3 10-2 10-1 100 101 102
Time t [s]

8. 2SJ374 Capacitance
10000
Ciss
Capacitance Ciss Coss Crss [pF]
1000 Coss
Crss
100
Tc=25°C
TYP
10
0 -10 -20 -30 -40 -50
Drain-Source Voltage VDS [V]

9. 2SJ374 Power Derating
100
80
Power Derating [%]
60
40
20
0
0 50 100 150
Case Temperature Tc [°C]

10. 2SJ374 Gate Charge Characteristics
-50 -20
VDS
-40
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]
-15
VDD = −48V
-30 −24V
−12V
-10
-20
VGS
-5
-10
ID = −20A
0 0
0 -20 -40 -60 -80 -100 -120 -140
Gate Charge Qg [nC]