The document is a detailed device modeling report for a power MOSFET (part number 2SK2563) by Shindengen, outlining its electrical parameters, simulation results, and characteristics. It includes data on various model parameters, transconductance results, gate charge characteristics, and switching times, alongside measurement comparisons to demonstrate the accuracy of simulations. The report highlights essential performance metrics, including current characteristics, capacitance measurements, and reverse recovery attributes relevant for circuit design and analysis.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK2563
MANUFACTURER: Shindengen
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.200 0.850 0.860 1.176
0.500 1.380 1.360 -1.449
1.000 1.950 1.910 -2.051
2.000 2.700 2.680 -0.741
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 3.400 3.431 0.918
0.200 3.600 3.568 -0.892
0.500 3.850 3.839 -0.291
1.000 4.100 4.145 1.107
2.000 4.600 4.582 -0.391
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
2.0A
1.0A
0A
0V 2.5V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
Simulation Result
ID=2A, VGS=10V Measurement Simulation Error (%)
R DS (on) 1.800  1.800  0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u U5 I2
TF = 10n W1 2SK2563S 4Adc
TR = 10n +
TD = 0
I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 200Vdc
0
Simulation Result
VDD=200V Measurement Simulation Error (%)
,ID=4A
Qgs 3.000 nC 3.018 nC 0.600
Qgd 7.500 nC 7.556 nC 0.747
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
2.000 145.000 144.000 -0.690
5.000 100.000 101.400 1.400
10.000 75.000 75.180 0.240
20.000 56.000 55.400 -1.071
50.000 37.000 37.600 1.622
100.000 28.000 27.400 -2.143
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =153 (V)
VGS = 10V
8V
4V
0V
4.98us 5.00us 5.02us 5.04us 5.06us 5.08us 5.10us
V(2) V(3)/15.3
Time
Evaluation circuit
3
V3 L1
0Vdc
30nH
R1 L2 RL
2
75
50 30nH
V1 = 0 U3
V1 2SK2563S
V2 = 20 VDD
TD = 5u R2
TR = 6n
TF = 7n 50 153
PW = 10u
PER = 1000u
0 0 0 0
Simulation Result
ID=2A, VDD=153V
Measurement Simulation Error(%)
VGS=0/10V
ton 40.00[max.] ns 39.88 ns -0.30
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
4.0A
5.0V
2.0A
4.5V
4.0V
VGS=3.5V
0A
0V 25V 50V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V1 V2
10Vdc 25Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
2.0A
1.0A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.010 0.558 0.561 0.538
0.020 0.586 0.586 -0.004
0.050 0.622 0.620 -0.322
0.100 0.652 0.647 -0.767
0.200 0.678 0.677 -0.086
0.500 0.726 0.729 0.413
1.000 0.784 0.787 0.383
2.000 0.882 0.880 -0.227
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
8us 10us 12us 14us 16us 18us 20us 22us 24us 26us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0.576u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.520 us 1.521 us 0.066
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic Reference
Trj=1.52(us)
Trb=0.88(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005