The document summarizes a complementary N-channel and P-channel 60V MOSFET device. Key specifications include: - N-channel: RDS(on) of 1.4Ω at 10V gate voltage and 500mA drain current. P-channel: RDS(on) of 4Ω at -10V gate voltage and -500mA drain current. - Maximum drain-source voltage of 60V for N-channel and -60V for P-channel. - Applications include replacing digital transistors, battery-operated systems, and power supply converters.

1. Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY FEATURES
VDS (V) RDS(on) () ID (mA) • Halogen-free According to IEC 61249-2-21
Definition
1.40 at VGS = 10 V 500
N-Channel 60 • TrenchFET® Power MOSFETs
3 at VGS = 4.5 V 200 • Very Small Footprint
4 at VGS = - 10 V - 500 • High-Side Switching
P-Channel - 60 • Low On-Resistance:
8 at VGS = - 4.5 V - 25
N-Channel, 1.40 
P-Channel, 4 
• Low Threshold: ± 2 V (typ.)
SC-89 • Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
S1
1 6 D1 • Compliant to RoHS Directive 2002/95/EC
Marking Code: H
G1 2 5 G2 BENEFITS
• Ease in Driving Switches
D2 3 4 S2 • Low Offset (Error) Voltage
• Low-Voltage Operation
Top View • High-Speed Circuits
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel P-Channel
Parameter Symbol 5s Steady State 5s Steady State Unit
Drain-Source Voltage VDS 60 - 60
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 320 305 - 200 - 190
Continuous Drain Current (TJ = 150 °C)a ID
TA = 85 °C 230 220 - 145 - 135
mA
Pulsed Drain Currentb IDM 650 - 650
Continuous Source Current (Diode Conduction)a IS 450 380 - 450 - 380
TA = 25 °C 280 250 280 250
Maximum Power Dissipationa PD mW
TA = 85 °C 145 130 145 130
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71435 www.vishay.com
S10-2432-Rev. C, 25-Oct-10 1

2. Si1029X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
VGS = 0 V, ID = 10 µA N-Ch 60
Drain-Source Breakdown Voltage VDS
VGS = 0 V, ID = - 10 µA P-Ch - 60
V
VDS = VGS, ID = 250 µA N-Ch 1 2.5
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = - 250 µA P-Ch -1 - 3.0
N-Ch ± 50
VDS = 0 V, VGS = ± 5 V
P-Ch ± 100
Gate-Body Leakage IGSS
N-Ch ± 150
VDS = 0 V, VGS = ± 10 V
P-Ch ± 200
nA
VDS = 50 V, VGS = 0 V N-Ch 10
VDS = - 50 V, VGS = 0 V P-Ch - 25
Zero Gate Voltage Drain Current IDSS
VDS = 50 V, VGS = 0 V, TJ = 85 °C N-Ch 100
VDS = - 50 V, VGS = 0 V, TJ = 85 °C P-Ch - 250
VDS = 10 V, VGS = 4.5 V N-Ch 500
VDS = - 10 V, VGS = - 4.5 V P-Ch - 50
On-State Drain Currenta ID(on) mA
VDS = 7.5 V, VGS = - 4.5 V N-Ch 800
VDS = - 10 V, VGS = - 10 V P-Ch - 600
VGS = 4.5 V, ID = 200 mA N-Ch 3
VGS = - 4.5 V, ID = - 25 mA P-Ch 8
Drain-Source On-State VGS = 10 V, ID = 500 mA N-Ch 1.40
RDS(on) 
Resistancea VGS = - 10 V, ID = - 500 mA P-Ch 4
VGS = 10 V, ID = 500 mA, TJ = 125 °C N-Ch 2.50
VGS = - 10 V, ID = - 500 mA, TJ = 125 °C P-Ch 6
VDS = 10 V, ID = 200 mA N-Ch 200
Forward Transconductancea gfs ms
VDS = - 10 V, ID = - 100 mA P-Ch 100
IS = 200 mA, VGS = 0 V N-Ch 1.4
Diode Forward Voltagea VSD V
IS = - 200 mA, VGS = 0 V P-Ch - 1.4
Dynamicb
N-Ch 750
Total Gate Charge Qg N-Channel P-Ch 1700
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
N-Ch 75
Gate-Source Charge Qgs pC
P-Channel P-Ch 260
VDS = - 30 V, VGS = - 15 V, ID = - 500 mA N-Ch 225
Gate-Drain Charge Qgd
P-Ch 460
N-Ch 30
Input Capacitance Ciss N-Channel P-Ch 23
VDS = 25 V, VGS = 0 V, f = 1 MHz
N-Ch 6
Output Capacitance Coss pF
P-Channel P-Ch 10
VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Ch 3
Reverse Transfer Capacitance Crss
P-Ch 5
N-Channel N-Ch 15
Turn-On Timec tON VDD = 30 V, RL = 150 
ID  200 mA, VGEN = 10 V, Rg = 10  P-Ch 20
ns
P-Channel N-Ch 20
Turn-Off Timec tOFF VDD = - 25 V, RL = 150 
ID  - 165 mA, VGEN = - 10 V, Rg = 10  P-Ch 35
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com Document Number: 71435
2 S10-2432-Rev. C, 25-Oct-10

3. Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0 1200
6V
VGS = 10 V thru 7 V TJ = - 55 °C
5V
0.8
900
I D - Drain Current (mA)
I D - Drain Current (A)
25 °C
0.6
125 °C
600
4V
0.4
300
0.2
3V
0.0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
4.0 50
VGS = 0 V
3.5
f = 1 MHz
40
R DS(on) - On-Resistance ( )
3.0
C - Capacitance (pF)
2.5
30
2.0 VGS = 4.5 V Ciss
20
1.5 VGS = 10 V
1.0 Coss
10
Crss
0.5
0.0 0
0 200 400 600 800 1000 0 5 10 15 20 25
I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 2.0
6 VDS = 10 V VGS = 10 V at 500 mA
VGS - Gate-to-Source Voltage (V)
ID = 250 mA
1.6
R DS(on) - On-Resistance
5
(Normalized)
1.2 VGS = 4.5 V
4
at 200 mA
3
0.8
2
0.4
1
0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 71435 www.vishay.com
S10-2432-Rev. C, 25-Oct-10 3

4. Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000 5
VGS = 0 V
4
R DS(on) - On-Resistance ( )
I S - Source Current (A)
100
3
TJ = 125 °C
2 ID = 500 mA
10 TJ = 25 °C
ID = 200 mA
1
TJ = - 55 °C
1 0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
ID = 250 µA
V GS(th) Variance (V)
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
www.vishay.com Document Number: 71435
4 S10-2432-Rev. C, 25-Oct-10

5. Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0 1200
VGS = 10 V
TJ = - 55 °C
7V
0.8 8V
900
I D - Drain Current (mA)
I D - Drain Current (A)
25 °C
0.6 6V
125 °C
600
0.4
5V
300
0.2
4V
0.0 0
0 1 2 3 4 5 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
20 40
VGS = 0 V
VGS = 4.5 V 32
16
R DS(on) - On-Resistance ( )
Ciss
C - Capacitance (pF)
12 24
VGS = 5 V
8 16
Coss
VGS = 10 V
4 8
Crss
0 0
0 200 400 600 800 1000 0 5 10 15 20 25
I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
15 1.8
ID = 500 mA
1.5
VGS - Gate-to-Source Voltage (V)
12
VDS = 30 V VGS = 10 V at 500 mA
R DS(on) - On-Resistance
VDS = 48 V 1.2
(Normalized)
9
VGS = 4.5 V at 25 mA
0.9
6
0.6
3
0.3
0 0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150
Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 71435 www.vishay.com
S10-2432-Rev. C, 25-Oct-10 5

6. Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000 10
VGS = 0 V
8 ID = 500 mA
R DS(on) - On-Resistance ( )
I S - Source Current (A)
100
6
TJ = 125 °C
4
10 ID = 200 mA
TJ = 25 °C
2
TJ = - 55 °C
1 0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
ID = 250 µA
0.3
VGS(th) Variance (V)
0.2
0.1
0.0
- 0.1
- 0.2
- 0.3
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
www.vishay.com Document Number: 71435
6 S10-2432-Rev. C, 25-Oct-10

7. Si1029X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
1
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71435.
Document Number: 71435 www.vishay.com
S10-2432-Rev. C, 25-Oct-10 7

8. Package Information
Vishay Siliconix
SC89: 6Ć LEADS (SOTĆ563F)
2 3
D aaa C
4
E1/2
e1 2X
A 4
B
ÎÎÎÎÎÎ
6
ÎÎÎÎÎÎ 5 4
D
ÎÎÎÎÎÎ ÎÎÎÎÎ SECTION B-B
E/2 ÎÎÎÎÎ C
6
2 3 E1 E
ÎÎÎÎÎ
2X
DETAIL “A”
aaa C
ÎÎÎÎÎÎ
1 2 3 2X
5
e
ÎÎÎÎÎÎ bbb C
B 6X b
4 ccc M C A–B D
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ A1
L
L1 ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
A
ÎÎÎÎÎÎ
A1 SEE DETAIL “A”
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ MILLIMETERS Tolerances
Of Form And
Dim Min Max Note Symbol Position
NOTES:
A 0.56 0.60 aaa 0.10
1. Dimensions in millimeters.
A1 0.00 0.10 bbb 0.10
2.
2 Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed b 0.15 0.30 ccc 0.10
0.15 mm per dimension E1 does not include interlead flash or c 0.10 0.18
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side. D 1.50 1.70 2, 3
3.
3 Dimensions D and E1 are determined at the outmost extremes E 1.55 1.70
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
E1 1.20 BSC 2, 3
the top and the bottom of the plastic body. e 0.50 BSC
4.
4 Datums A, B and D to be determined 0.10 mm from the lead tip. e1 1.00 BSC
L 0.35 BSC
5.
5 Terminal numbers are shown for reference only.
L1 0.20 BSC
6.
6 These dimensions apply to the flat section of the lead between ECN: E-00499—Rev. B, 02-Jul-01
0.08 mm and 0.15 mm from the lead tip. DWG: 5880
Document Number: 71612 www.vishay.com
25-Jun-01 1

9. Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
(0.478)
0.019
(0.798)
(1.753)
0.031
0.069
0.012 0.020
(0.300) (0.500)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605 www.vishay.com
Revision: 21-Jan-08 21

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www.vishay.com
Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12 1 Document Number: 91000