This document provides product information for a 3rd Generation thinQ! Silicon Carbide Schottky Diode. Some key details: 1) It uses revolutionary Silicon Carbide semiconductor material, providing switching behavior benchmarks, no reverse/forward recovery, and temperature independent switching. 2) It has a breakdown voltage of 600V, forward current of 10A, and capacitive charge of 16nC. 3) It is optimized for fast switching applications like power supplies, motor drives, solar, and UPS systems.

1. IDH10SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features Product Summary
• Revolutionary semiconductor material - Silicon Carbide
V DC 600 V
• Switching behavior benchmark
QC 16 nC
• No reverse recovery / No forward recovery
• Temperature independent switching behavior I F; T C< 130 °C 10 A
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type Package Marking Pin 1 Pin 2
IDH10SG60C PG-TO220-2 D10G60C C A
Maximum ratings
Parameter Symbol Conditions Value Unit
Continuous forward current IF T C<130 °C 10 A
Surge non-repetitive forward current, I F,SM T C=25 °C, t p=10 ms 51
sine halfwave T C=150 °C, t p=10 ms 44
Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 410
∫i 2dt T C=25 °C, t p=10 ms 13 A2s
i ²t value
T C=150 °C, t p=10 ms 10
Repetitive peak reverse voltage V RRM T j=25 °C 600 V
Diode dv/dt ruggedness dv/ dt VR= 0….480 V 50 V/ns
Power dissipation P tot T C=25 °C 120 W
Operating and storage temperature T j, T stg -55 ... 175 °C
Soldering temperature, 1.6mm (0.063 in.) from
T sold 260
wavesoldering only allowed at leads case for 10s
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 2.3 page 1 2009-08-04

2. IDH10SG60C
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R thJC - - 1.25 K/W
Thermal resistance,
Thermal resistance,
R thJA junction- ambient, - - 62
junction - ambient
leaded
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage V DC I R=0.05 mA, T j=25 °C 600 - - V
Diode forward voltage VF I F=10 A, T j=25 °C - 1.8 2.1
I F=10 A, T j=150 °C - 2.2 -
Reverse current IR V R=600 V, T j=25 °C - 0.8 90 µA
V R=600 V, T j=150 °C - 3.3 860
AC characteristics
Total capacitive charge Qc V R=400 V,I F≤I F,max, - 16 - nC
di F/dt =200 A/µs,
Switching time3) tc T j=150 °C - - <10 ns
Total capacitance C V R=1 V, f =1 MHz - 290 - pF
V R=300 V, f =1 MHz - 40 -
V R=600 V, f =1 MHz - 40 -
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Under worst case Zth conditions.
5)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.3 page 2 2009-08-04

3. IDH10SG60C
1 Power dissipation 2 Diode forward current
P tot=f(T C); parameter: RthJC(max) I F=f(T C)4); T j≤175 °C; parameter: D = t p/T
120 80
70 0.1
100
60
80
50
P tot [W]
I F [A]
60 0.3
40
30 0.5
40
0.7
20 1
20
10
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C [°C] T C [°C]
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
mode
I F=f(VF); t p=400 µs; parameter:T j I F=f(VF); t p=400 µs; parameter: T j
20 80
-55 °C
25 °C
100 °C
15 60
150 °C
-55 °C
I F [A]
I F [A]
10 40
175 °C 25 °C
100 °C
5 20 150 °C
175 °C
0 0
0 1 2 3 4 0 2 4 6 8
V F[V] V F [V]
Rev. 2.3 page 3 2009-08-04

4. IDH10SG60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
5)
Q C=f(di F/dt ) ; I F≤I F,max I R=f(VR); parameter: T j
20 101
100
15
10-1
Q c [nC]
I R [µA]
10
175 °C
10-2
150 °C
100 °C
5 25 °C
10-3 -55 °C
0 10-4
100 400 700 1000 100 200 300 400 500 600
di F/dt [A/µs] V R [V]
7 Typ. transient thermal impedance 8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p); parameter: D = t P/T C =f(V R); T C=25 °C, f =1 MHz
101 350
300
250
100
0.5
ZthJC [K/W]
200
C [pF]
0.2
150
0.1
10-1
100
0.05
0.02
50
0.01
0
10-2 0
10-6 10-5 10-4 10-3 10-2 10-1 10-1 100 101 102 103
tp [s] V R [V]
Rev. 2.3 page 4 2009-08-04

5. IDH10SG60C
9 Typ. C stored energy
E C=f(V R)
10
8
6
E c [µJ]
4
2
0
0 100 200 300 400 500 600
V R [V]
Rev. 2.3 page 5 2009-08-04

6. IDH10SG60C
PG-TO220-2: Outline
Dimensions in mm/inches
Rev. 2.3 page 6 2009-08-04

7. IDH10SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
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Rev. 2.3 page 7 2009-08-04