Original Mosfet Driver AO4407A 4407A 4407 SOP-8 New Alpha&Omega https://authelectronic.com/original-mosfet-driver-ao4407a-4407a-4407-sop-8-new-alpha-omega

1. Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Parameter Symbol Typ Max
t ≤ 10s 32 40
Steady State 60 75
Steady State RθJL 17 24
Junction and Storage Temperature Range
TA=70°C
ID
Gate-Source Voltage
PD
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
Power Dissipation A
TA=25°C
Drain-Source Voltage
Pulsed Drain Current B
-30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain
Current A
UnitsParameter
TA=25°C
TA=70°C
Maximum Junction-to-Lead C
°C/W
Thermal Characteristics
Units
Maximum Junction-to-Ambient A
°C/W
Maximum Junction-to-Ambient A
°C/W
RθJA
A
mJ
V
V
2.0
°C-55 to 150
W
Maximum
-12
-10
3.1
±25
-60
-26
101
AO4407A
30V P-Channel MOSFET
Product Summary
VDS = -30V
ID = -12A (VGS = -20V)
RDS(ON) < 11m (VGS = -20V)
RDS(ON) < 13m (VGS = -10V)
RDS(ON) < 17m (VGS = -6V)
100% UIS Tested
100% Rg Tested
General Description
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

2. AO4407A
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ = 55°C -5
IGSS ±100 nA
VGS(th) -1.7 -2.3 -3 V
ID(ON) -60 A
8.5 11
TJ=125°C 11.5 15
10 13
12.7 17
gFS 21 S
VSD -0.7 -1 V
IS -3 A
Ciss 2060 2600 pF
Coss 370 pF
Crss 295 pF
Rg 2.4 3.6 Ω
Qg 30 39 nC
Qgs 4.6 nC
Qgd 10 nC
tD(on) 11 ns
tr 9.4 ns
tD(off) 24 ns
tf 12 ns
trr 30 40 ns
Qrr 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID = -250µA, VGS = 0V
VGS = -10V, VDS = -5V
VGS = -20V, ID = -12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS = VGS ID = -250µA
VDS = -30V, VGS = 0V
VDS = 0V, VGS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS = -6V, ID = -10A
IS = -1A,VGS = 0V
VDS = -5V, ID = -10A
VGS = -10V, ID = -12A
mΩ
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-12A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
A: The value of R θJA is measured with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev10: Nov 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

3. AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IF=-6.5A, dI/dt=100A/µs
0
20
40
60
80
0 1 2 3 4 5
-VDS (Volts)
Figure 1: On-Region Characteristics
-ID(A)
-5V
-6V-10V
-4.5V
-4V
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
25°C
125°C
VDS= -5V
0
5
10
15
20
0 4 8 12 16 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON)(mΩΩΩΩ)
VGS=-10V
VGS=-6V
VGS=-20V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS(A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
NormalizedOn-Resistance
5
10
15
20
25
30
3 4 5 6 7 8 9 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩΩΩΩ)
ID=-12A
25°C
125°C
VGS= -3.5V
VGS=-20V
ID=-12A
VGS=-10V
ID=-12A
VGS=-6V
ID=-10A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

4. AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS(Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance(pF)
Ciss
Coss
Crss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power(W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
ZθθθθJANormalizedTransient
ThermalResistance
0.01
0.1
1
10
100
0.1 1 10 100
-VDS (Volts)
-ID(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
100ms
10s
DC
RDS(ON) limited
TJ(Max)=150°C
TA=25°C
10µs
VDS=-15V
ID=-12A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

5. AO4407A
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
VddVgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LIARAR
BVDSS
I AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F-I
-I
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com