SPICE MODEL of 2SK3681-01 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3681-01
MANUFACTURER: Fuji Electric Co., Ltd.
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.50 6.00 5.91 -1.50
1.00 8.00 8.20 2.50
2.00 11.50 11.30 -1.74
5.00 17.00 16.80 -1.18
10.00 22.00 22.20 0.91
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5. Vgs-Id Characteristic
Circuit Simulation result
50A
10A
1.0A
100mA
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.500 4.980 4.980 0.006
1.000 5.030 5.051 0.412
2.000 5.165 5.154 -0.221
5.000 5.390 5.367 -0.423
10.000 5.600 5.621 0.366
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
25.0A
22.5A
20.0A
17.5A
15.0A
12.5A
10.0A
7.5A
5.0A
2.5A
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
V_V2
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 25Vdc
0
Simulation Result
ID=26, VGS=10V Measurement Simulation Error (%)
R DS (on) 120.00 m 120.01 m 0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0 20n 40n 60n 80n 100n 120n 140n 160n 180n
V(W1:2)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u U11 I2
TF = 10n W1 2SK3681-01S
TR = 10n + 43Adc
TD = 0
-
I2 = 10m
I1 W
I1 = 0 IOFF = 10mA V1
ION = 0uA 300Vdc
0
Simulation Result
VDD=300V Measurement Simulation Error (%)
,ID=43A
Qgs 34.00 nC 34.15 nC 0.44
Qgd 40.00 nC 40.16 nC 0.40
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
1.000 6.900 6.860 -0.580
2.000 4.600 4.523 -1.674
5.000 2.500 2.389 -4.440
10.000 1.500 1.460 -2.667
20.000 0.850 0.870 2.353
50.000 0.470 0.440 -6.383
100.000 0.320 0.297 -7.188
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =300 (V)
VGS = 10V
8V
4V
0V
4.9us 5.0us 5.2us 5.4us 5.6us
V(2) V(3)/30
Time
Evaluation circuit
3
L1
50nH
V3
0Vdc
RL
13.8
R1 L2
2
V1 = 0
V1 10 30nH VDD
V2 = 10
TD = 5u
TR = 6n 300
TF = 7n
PW = 10u
PER = 1000u
0
0 0
Simulation Result
ID=21.5A, VDD=300V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 80.00 ns 80.14 ns 0.18
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
5.6V
5.4V
5A
5.2V
VGS=5.0V
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
V_V2
Evaluation circuit
V2
0V dc
V3
V1
25 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristic Reference
5.6V
5.4V
5.2V
VGS=5.0V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
50A
10A
1.0A
100mA
0.5V 0.6V 0.8V 1.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.578 0.582 0.692
0.200 0.610 0.608 -0.328
0.500 0.646 0.643 -0.542
1.000 0.670 0.670 -0.052
2.000 0.694 0.695 0.072
5.000 0.726 0.729 0.413
10.000 0.756 0.755 -0.106
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
10us 12us 14us 16us 18us 20us 22us 24us 26us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0.4u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 2.930 us 2.925 ns -0.171
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16. Reverse Recovery Characteristic Reference
Trj=2.93(us)
Trb=1.59(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005