SPICE MODEL of 2SK3728-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3728-01MR (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3728-01MR
MANUFACTURER: Fuji Electric Co., Ltd.
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.200 0.900 0.940 4.444
0.500 1.480 1.478 -0.135
1.000 2.070 2.077 0.338
2.000 2.900 2.912 0.414
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Vgs-Id Characteristic
Circuit Simulation result
5.0A
1.0A
100mA
50mA
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 4.815 4.845 0.623
0.200 4.980 4.972 -0.159
0.500 5.240 5.222 -0.351
1.000 5.490 5.495 0.087
2.000 5.900 5.904 0.066
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
12us 14us 16us 18us 20us 22us 24us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0.4u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.750 us 1.755 ns 0.286
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
16. Reverse Recovery Characteristic Reference
Trj=1.75(us)
Trb=4.25(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005