Datasheet of 2SK2287,Power MOSFET by SHINDENGEN

1. SHINDENGEN
60V Series Power MOSFET N-Channel Enhancement type
2SK2287 OUTLINE DIMENSIONS
Case : FTO-220
(Unit : mm)
( F20F6N )
60V 20A
FEATURES
•œ GS= 4V drive
V
•œ
Built-in ZD for Gate Protection
•œ
Avalanche resistance guaranteed
APPLICATION
•œDC/DC converters
•œ
Non-Isolated DC-DC Converter
•œ
Power management
•œ
Motor & Solenoid Drive of
Office Equipment
•œ
Mobile Gear
RATINGS
•œAbsolute Maximum Ratings • = 25•Ž•j
Tc
i
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55•`150 •Ž
Channel Temperature Tch 150
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS •}20
Continuous Drain Current•DC•j
i ID 20
Continuous Drain Current•Peak)
i IDP Pulse width•…10ƒÊs, Duty cycle•…1/100
80 A
Continuous Source Current•DC•j
i IS 20
Total Power Dissipation PT 40 W
Single Avalanche Current IAS T ch= 25•Ž 20 A
Dielectric Strength Vdis Terminals to case,• AC 1 minute
@ 2 kV
Mounting Torque TOR •i
Recommended torque • N¥m •j
F0.3 0.5 N¥m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2. 60V Series Power MOSFET 2SK2287 ( F20F6N )
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 60 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 100 μA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±10
Forward Tranｓconductance gfs ID = 10A, VDS = 10V 10 15 S
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 10A, VGS = 10V 0.035 0.045 Ω
Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 1.0 1.5 2.0 V
Source-Drain Diode Forward Voltage VSD IS = 10A, VGS = 0V 1.5
Thermal Resistance θjc junction to case 3.12 ℃/Ｗ
Total Gate Charge Qg VDD = 48V, VGS = 10V, ID = 20A 56 nC
Input Capacitance Ciss 1500
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 280 pF
Output Capacitance Coss 670
Turn-On Time ton ID = 10A, RL = 3Ω, VGS = 10V 110 230 ns
Turn-Off Time toff 430 900
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

3. 2SK2287 Transfer Characteristics
40
Tc = −55°C
35 25°C
100°C
30 150°C
Drain Current ID [A]
25
20
15
10
5 VDS = 5V
pulse test
TYP
0
0 2 4 6 8 10
Gate-Source Voltage VGS [V]

4. 2SK2287 Static Drain-Source On-state Resistance
100
Static Drain-Source On-state Resistance RDS(ON) [mΩ]
ID = 10A
10
VGS = 10V
pulse test
TYP
1
-50 0 50 100 150
Case Temperature Tc [°C]

5. 2SK2287 Gate Threshold Voltage
2.5
2
Gate Threshold Voltage VTH [V]
1.5
1
0.5
VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150
Case Temperature Tc [°C]

6. 2SK2287 Safe Operating Area
100
10µs
R DS(ON)
limit
100µs
200µs
10
Drain Current ID [A]
1ms
10ms
1
DC
Tc = 25°C
Single Pulse
0.1
1 10 100
Drain-Source Voltage VDS [V]

7. 2SK2287 Transient Thermal Impedance
100
10
1
0.1
Transient Thermal Impedance θjc(t) [°C/W]
0.01
10-5 10-4 10-3 10-2 10-1 100 101 102
Time t [s]

8. 2SK2287 Capacitance
10000
Ciss
Capacitance Ciss Coss Crss [pF]
1000
Coss
Crss
100
Tc=25°C
TYP
10
0 10 20 30 40 50
Drain-Source Voltage VDS [V]

9. 2SK2287 Power Derating
100
80
Power Derating [%]
60
40
20
0
0 50 100 150
Case Temperature Tc [°C]

10. 2SK2287 Gate Charge Characteristics
50 20
40
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]
15
VDD = 48V
24V
30
12V
VDS
10
20 VGS
5
10
ID = 20A
0 0
0 20 40 60 80 100
Gate Charge Qg [nC]