Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: TPCF8102MANUFACTURER: TOSHIBABody Diode (Mode...
Circuit ConfigurationTP CF8 10 2MOSFET MODELPspice model                                          Model description Parame...
Transconductance CharacteristicCircuit Simulation ResultComparison table                                          gfs     ...
Vgs-Id CharacteristicCircuit Simulation result        -10A          -8A          -6A          -4A          -2A           0...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)       ID(A)       ...
Rds(on) CharacteristicCircuit Simulation result        -3.0A        -2.0A        -1.0A        -0.1A                0V    -...
Gate Charge CharacteristicCircuit Simulation result         -20V         -16V         -12V           -8V           -4V    ...
Capacitance Characteristic                                                              Measurement                       ...
Switching Time CharacteristicCircuit Simulation result           -12V                                 VDD =-10V           ...
Output CharacteristicCircuit Simulation result          -10A                                -2.0V           -8A           ...
BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result     -20A    -1.0A            0V            0...
Comparison GraphCircuit Simulation ResultSimulation Result                          VDS (V)                   VDS (V)     ...
Reverse Recovery CharacteristicCircuit Simulation Result            400mA                 0A           -400mA             ...
Reverse Recovery Characteristic                                        ReferenceTrj=8.8(ns)Trb=31.2(ns)Conditions:Ifwd=lre...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result     10mA      9mA      8mA      7mA ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
Upcoming SlideShare
Loading in …5
×

SPICE MODEL of TPCF8102 (Standard+BDS Model) in SPICE PARK

382 views

Published on

SPICE MODEL of TPCF8102 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
382
On SlideShare
0
From Embeds
0
Number of Embeds
19
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of TPCF8102 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: TPCF8102MANUFACTURER: TOSHIBABody Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. Circuit ConfigurationTP CF8 10 2MOSFET MODELPspice model Model description Parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation -0.500 6.097 6.250 2.509 -1.000 8.333 8.621 3.452 -2.000 11.765 11.765 -0.002 -5.000 17.240 17.422 1.053 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -10A -8A -6A -4A -2A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V I(V3) V_V1Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -1.225 -1.242 1.412 -0.500 -1.290 -1.302 0.922 -1.000 -1.370 -1.371 0.044 -2.000 -1.460 -1.471 0.740 -5.000 -1.655 -1.680 1.498 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Rds(on) CharacteristicCircuit Simulation result -3.0A -2.0A -1.0A -0.1A 0V -20mV -50mV -80mV -110mV -140mV -170mV I(V3) V_V2Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0Simulation Result ID=-3.0A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 24.000 m 24.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Gate Charge CharacteristicCircuit Simulation result -20V -16V -12V -8V -4V 0V 0 8n 16n 24n 32n 40n V(W1:2) Time*1msEvaluation circuit V2 0Vdc ION = 0uA TPCF8102 IOFF = 1m W D1 - I1 = 0 + I2 I1 Dbreak I2 = 1m W1 TD = 0 -6Adc TR = 10n TF = 10n PW = 600u V1 PER = 1000u -16Vdc 0Simulation Result VDD=-16V,ID=-6.0A Measurement Simulation Error (%) ,VGS=-5V Qgs 4.000 nC 4.000 nC 0.000 Qgd 5.000 nC 5.000 nC 0.000 Qg 19.000 nC 16.956 nC -10.758 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.200 200.000 198.000 -1.000 0.500 160.700 159.000 -1.058 1.000 127.000 125.000 -1.575 2.000 93.000 91.000 -2.151 5.000 55.000 54.450 -1.000 10.000 37.000 36.000 -2.703 20.000 23.000 22.700 -1.304 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Switching Time CharacteristicCircuit Simulation result -12V VDD =-10V Vg = 0/-5.0V -8V -4V 0V 4.940us 4.980us 5.020us 5.060us 5.094us V(2)*2 V(3) TimeEvaluation circuit R1 L2 V3 2 3 4.7 30nH 0Vdc V1 = 0 L1 TPCF8102 V1 V2 = -10 TD = 5u R2 50nH TR = 6n TF = 6n 4.7 PW = 5u PER = 10u RL 0 0 3.33 VDD -10.05 0 0Simulation Result ID=-3.0A, VDD=-10V Measurement Simulation Error(%) VGS=0/-5V ton 13.000 ns 13.576 ns 4.431 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Output CharacteristicCircuit Simulation result -10A -2.0V -8A -1.9V -1.8V -6A -1.7V -4A -16V -1.5V -2A VGS=-1.4V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result -20A -1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(V2) V_V3Evaluation Circuit R1 0.01m TPCF8102 V2 0Vdc 0Vdc V3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result VDS (V) VDS (V) IDR (A) Measurement Simulation %Error -1.000 0.690 0.697 1.014 -2.000 0.730 0.740 1.370 -5.000 0.810 0.813 0.370 -10.000 0.890 0.894 0.449 -20.000 1.010 1.019 0.891 -1.000 0.690 0.697 1.014 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 14.88us 14.96us 15.04us 15.12us 15.20us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9.7} V2 = {10.6} TD = 24.546n V1 TR = 10n TF = 10n PW = 15u TPCF8102 PER = 100u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 8.800 ns 8.808 ns 0.091 trb 31.200 ns 45.098 ns 44.545 trr 40.000 ns 53.906 ns 34.765 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery Characteristic ReferenceTrj=8.8(ns)Trb=31.2(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(R1) V_V1Evaluation Circuit R1 0.01m OPEN OPEN OPEN V1 OPEN TPCF8102 0Vdc R2 1MEG 0 OPEN OPEN OPEN 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

×