SPICE MODEL of 2SJ464 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of 2SJ464 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SJ464 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: 2SJ464MANUFACTURER: TOSHIBAREMARK: P Channel ModelBody Diode (Standard) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Transconductance CharacteristicCircuit Simulation ResultComparison table gfs Id(A) Error(%) Measurement Simulation -1.000 6.000 5.750 -4.167 -2.000 8.000 7.850 -1.875 -5.000 12.000 11.700 -2.500 -10.000 16.000 15.800 -1.250 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -20A -16A -12A -8A -4A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1Evaluation circuit V3 0Vdc U8 2SJ464 V1 V2 0 10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -1.000 -2.100 -2.125 1.190 -2.000 -2.300 -2.272 -1.217 -5.000 -2.600 -2.582 -0.692 -10.000 -2.950 -2.949 -0.034 -20.000 -3.500 -3.494 -0.171 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Rds(on) CharacteristicCircuit Simulation result -10A -5A 0A 0V -0.5V -1.0V I(V2) V_VDSEvaluation circuit V2 0Vdc U8 2SJ464 VDS 0Vdc VGS -10Vdc 0Simulation Result ID=-9A, VGS=-10V Measurement Simulation Error (%) R DS (on) 64.000 m 64.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Gate Charge CharacteristicCircuit Simulation result 16V 12V 8V 4V 0V 0 40n 80n 120n 160n 200n -V(W1:4) Time*1mAEvaluation circuit ION = 0uA IOFF = 1mA W I2 - D2 + U11 Dbreak 18 2SJ464 I1 = 0 W1 I1 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u 80 0Simulation Result VDD=-80V,ID=-18A Measurement Simulation Error (%) ,VGS=-10V Qgs 5.000 nC 6.084 nC 21.680 Qgd 50.000 nC 50.792 nC 1.584 Qg 140.000 nC 70.582 nC -49.584 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 2.050 2.056 0.293 0.200 1.900 1.895 -0.263 0.500 1.550 1.551 0.065 1.000 1.250 1.252 0.160 2.000 1.000 0.997 -0.300 5.000 0.710 0.704 -0.845 10.000 0.500 0.503 0.600 20.000 0.390 0.388 -0.513 50.000 0.240 0.245 2.083 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Switching Time CharacteristicCircuit Simulation result -13V -10V -5V 0V 1.91us 2.00us 2.10us 2.20us V(2) V(3)/5 TimeEvaluation circuit L2 R2 50nH 5.55 RG L1 PER = 2000u U9 30nH PW = 10u 2SJ464 V1 TF = 7n 4.7 TR = 6n 50Vdc R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0Simulation Result ID=-9A, VDD=-80V Measurement Simulation Error(%) VGS=0/10V ton 45.000 ns 74.487 ns 65.527 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Output CharacteristicCircuit Simulation result -50A -10V -6.0V -40A -8.0V -4.0V -30A -3.5V -20A -3.0V -10A VGS=-2.5V 0A 0V -4V -8V -12V -16V -20V I(V3) V_V2Evaluation circuit V3 0Vdc U10 2SJ464 V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result 20A 10A 1.0A 300mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc U9 2SJ464 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.300 0.670 0.670 0.000 0.500 0.690 0.689 -0.145 1.000 0.710 0.709 -0.141 2.000 0.740 0.738 -0.270 5.000 0.790 0.788 -0.253 10.000 0.830 0.827 -0.361 20.000 0.890 0.892 0.225 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 13.6us 14.4us 15.2us 16.0us 16.8us 17.6us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v TD = 0 TR = 10ns U9 TF = 10ns 2SJ464 PW = 1us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 128.000 ns 127.670 ns -0.258 trb 256.000 ns 177.603 ns -30.624 trr 384.000 ns 305.273 ns -20.502 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery Characteristic ReferenceTrj=128(ns)Trb=256(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0A 0V -5V -10V -15V -20V -25V -30V -35V -40V -45V I(R1) V_V1Evaluation Circuit R1 0.01m Open V1 0Vdc Ropen Open 10G U21 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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