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2SK2233
                                                                                                               2
                  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV)


                                                    2SK2233
Chopper Regulator, DC−DC Converter and Motor Drive
Applications                                                                                                                     Unit: mm



  4-V gate drive
  Low drain−source ON resistance                : RDS (ON) = 0.022 Ω (typ.)
  High forward transfer admittance              : |Yfs| = 27 S (typ.)
  Low leakage current            : IDSS = 100 μA (max) (VDS = 60 V)
  Enhancement mode               : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

             Characteristics                   Symbol             Rating           Unit

  Drain−source voltage                          VDSS                60               V
  Drain−gate voltage (RGS = 20 kΩ)              VDGR                60               V
  Gate−source voltage                           VGSS                ±20              V
                                                                                                     1. GATE
                           DC    (Note 1)         ID                45               A
  Drain current                                                                                      2. DRAIN (HEAT SINK)
                          Pulse (Note 1)          IDP               180              A               3. SOURCE
  Drain power dissipation (Tc = 25°C)             PD                100             W
                                                                                                     JEDEC                 ―
  Single pulse avalanche energy
                                                 EAS                246             mJ
                              (Note 2)                                                               JEITA                 ―
  Avalanche current                               IAR               45               A
                                                                                                     TOSHIBA           2-16C1B
  Repetitive avalanche energy (Note 3)           EAR                10              mJ
                                                                                                    Weight: 4.6 g (typ.)
  Channel temperature                             Tch               150             °C
  Storage temperature range                      Tstg           −55 to 150          °C

  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
         temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
         operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
         reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
         Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


Thermal Characteristics

              Characteristics                     Symbol             Max           Unit

  Thermal resistance, channel to case            Rth (ch−c)          1.25         °C / W
  Thermal resistance, channel to ambient         Rth (ch−a)           50          °C / W

  Note 1: Ensure that the channel temperature does not exceed 150°C.

  Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 μH, RG = 25 Ω, IAR = 45 A

  Note 3: Repetitive rating: pulse width limited by maximum channel temperature

  This transistor is an electrostatic-sensitive device.
  Please handle with caution.




                                                                     1                                                     2009-09-29
2SK2233

Electrical Characteristics (Ta = 25°C)

           Characteristics               Symbol                          Test Condition             Min     Typ.    Max     Unit

  Gate leakage current                     IGSS          VGS = ±16 V, VDS = 0 V                      —       —      ±10     μA
  Drain cut−off current                    IDSS          VDS = 60 V, VGS = 0 V                       —       —      100     μA
  Drain−source breakdown
                                        V (BR) DSS       ID = 10 mA, VGS = 0 V                      60       —       —       V
  voltage
  Gate threshold voltage                    Vth          VDS = 10 V, ID = 1 mA                      0.8      —      2.0      V
                                                         VGS = 4 V, ID = 15 A                        —       40      55
  Drain−source ON resistance            RDS (ON)                                                                            mΩ
                                                         VGS = 10 V, ID = 25 A                       —       22      30
  Forward transfer admittance              |Yfs|         VDS = 10 V, ID = 25 A                      15       27      —       S
  Input capacitance                        Ciss                                                      —     1800      —
  Reverse transfer capacitance             Crss          VDS = 10 V, VGS = 0 V, f = 1 MHz            —      350      —       pF

  Output capacitance                       Coss                                                      —      900      —

                    Rise time                tr                                                      —       20      —


                    Turn−on time            ton                                                      —       30      —
   Switching time                                                                                                            ns
                    Fall time                tf                                                      —       40      —


                    Turn−off time           toff                                                     —      130      —

  Total gate charge (Gate−source
                                            Qg                                                       —       60      —
  plus gate−drain)
                                                         VDD ≈ 48 V, VGS = 10 V, ID = 45 A                                  nC
  Gate−source charge                       Qgs                                                       —       40      —
  Gate−drain (“miller”) charge             Qgd                                                       —       20      —



Source−Drain Ratings and Characteristics (Ta = 25°C)

           Characteristics               Symbol                          Test Condition             Min     Typ.    Max     Unit

  Continuous drain reverse current
                                           IDR                                  —                    —       —       45      A
                          (Note 1)
  Pulse drain reverse current              IDRP                                                      —       —      180      A
                                                                                —
                           (Note 1)
  Forward voltage (diode)                 VDSF           IDR = 45 A, VGS = 0 V                       —       —      −1.8     V
  Reverse recovery time                     trr          IDR = 45 A, VGS = 0 V                       —       90      —       ns
  Reverse recovered charge                  Qrr          dIDR / dt = 100 A / μs                      —      0.1      —      μC



Marking

                                                            Note 4: A line under a Lot No. identifies the indication of product
                                                                   Labels.
                                                                   Not underlined: [[Pb]]/INCLUDES > MCV
                                                                   Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
   K2233               Part No. (or abbreviation code)
                       Lot No.                              Please contact your TOSHIBA sales representative for details as to
                                                            environmental matters such as the RoHS compatibility of Product.
                       Note 4                               The RoHS is the Directive 2002/95/EC of the European Parliament
                                                            and of the Council of 27 January 2003 on the restriction of the use of
                                                            certain hazardous substances in electrical and electronic equipment.


                                                                     2                                             2009-09-29
2SK2233




3   2009-09-29
2SK2233




4   2009-09-29
2SK2233




RG = 25 Ω                        1            ⎛    B VDSS    ⎞
                         EAS =     ⋅ L ⋅ I2 ⋅ ⎜              ⎟
VDD = 25 V, L = 165 μH           2            ⎝ B VDSS − VDD ⎠




  5                                         2009-09-29
2SK2233

RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
  in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
  TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
  responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
  systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
  injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
  also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
  the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
  Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
  solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
  appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
  information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
  referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
  LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
  equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
  Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
  reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
  public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
  in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
  equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
  power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
  document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
  applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
  infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
  any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
  FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
  WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
  LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
  LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
  SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
  FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
  limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
  technology products (mass destruction weapons). Product and related software and technology may be controlled under the
  Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
  or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
  Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
  including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
  noncompliance with applicable laws and regulations.




                                                                     6                                                     2009-09-29

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Toshiba Field Effect Transistor Silicon N Channel MOS Type Technical Specifications

  • 1. 2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV) 2SK2233 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.022 Ω (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V 1. GATE DC (Note 1) ID 45 A Drain current 2. DRAIN (HEAT SINK) Pulse (Note 1) IDP 180 A 3. SOURCE Drain power dissipation (Tc = 25°C) PD 100 W JEDEC ― Single pulse avalanche energy EAS 246 mJ (Note 2) JEITA ― Avalanche current IAR 45 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) EAR 10 mJ Weight: 4.6 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 1.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29
  • 2. 2SK2233 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain−source breakdown V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V voltage Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 15 A — 40 55 Drain−source ON resistance RDS (ON) mΩ VGS = 10 V, ID = 25 A — 22 30 Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 27 — S Input capacitance Ciss — 1800 — Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz — 350 — pF Output capacitance Coss — 900 — Rise time tr — 20 — Turn−on time ton — 30 — Switching time ns Fall time tf — 40 — Turn−off time toff — 130 — Total gate charge (Gate−source Qg — 60 — plus gate−drain) VDD ≈ 48 V, VGS = 10 V, ID = 45 A nC Gate−source charge Qgs — 40 — Gate−drain (“miller”) charge Qgd — 20 — Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current IDR — — — 45 A (Note 1) Pulse drain reverse current IDRP — — 180 A — (Note 1) Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.8 V Reverse recovery time trr IDR = 45 A, VGS = 0 V — 90 — ns Reverse recovered charge Qrr dIDR / dt = 100 A / μs — 0.1 — μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K2233 Part No. (or abbreviation code) Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29
  • 3. 2SK2233 3 2009-09-29
  • 4. 2SK2233 4 2009-09-29
  • 5. 2SK2233 RG = 25 Ω 1 ⎛ B VDSS ⎞ EAS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟ VDD = 25 V, L = 165 μH 2 ⎝ B VDSS − VDD ⎠ 5 2009-09-29
  • 6. 2SK2233 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29