SPICE MODEL of 2SK2661 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK2661 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2661 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Standard) PART NUMBER: 2SK2661 MANUFACTURER: TOSHIBA REMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.50 1.80 1.78 -1.11 1.00 2.45 2.48 1.22 2.00 3.50 3.48 -0.57 5.00 5.40 5.40 -0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result 7.0A 6.0A 4.0A 2.0A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V1 Evaluation circuit V3 0V dc V1 V2 10 Vd c 20 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 3.900 3.886 -0.356 0.200 4.000 3.994 -0.140 0.500 4.200 4.201 0.026 1.000 4.440 4.437 -0.065 2.000 4.770 4.771 0.010 5.000 5.450 5.446 -0.072 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result 2.5A 0A 0V 5V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc V1 V2 10Vdc 20Vdc 0 Simulation Result ID=2.5, VGS=10V Measurement Simulation Error (%) R DS (on) 1.35 1.35 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 5n 10n 15n 20n 25n V(W1:2) Time*1ms Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U8 I2 TF = 10n W1 2SK2661S TR = 10n + 5Adc TD = 0 - I2 = 1m I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 200Vdc 0 Simulation Result VDD=200V Measurement Simulation Error (%) ,ID=5A Qgs 4.50 nC 4.53 nC 0.67 Qgd 6.00 nC 6.04 nC 0.67 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1.00 570.00 574.00 0.70 2.00 420.00 418.00 -0.48 5.00 230.00 232.00 0.87 10.00 135.00 135.15 0.11 20.00 75.00 74.75 -0.33 50.00 35.00 32.30 -7.71 100.00 17.50 17.00 -2.86 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Switching Time Characteristic Circuit Simulation result 12V VDS = 228V VDS = 228V 8V 4V 0V 4.955us 5.000us 5.050us 5.100us V(2) V(3)/22.8 Time Evaluation circuit 3 L1 30nH V3 0Vdc RL 90 R1 L2 2 V1 = 0 V1 15 30nH VDD V2 = 20 U8 TD = 5u R2 2SK2661S TR = 6n 228 TF = 7n 15 PW = 10u PER = 1000u 0 0 0 0 Simulation Result ID=2.5A, VDD=228V Measurement Simulation Error(%) VGS=0/10V ton 25.00 ns 24.97 ns -0.12 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Output Characteristic Circuit Simulation result 5.0A 6V 5.5V 5V 2.5A 4.5 V VGS=4V 0A 0V 5V 10V I(V3) V_V2 Evaluation circuit V3 0V dc V1 V2 10 Vd c 20 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(V2) V_V3 Evaluation Circuit R1 0.0 1m U7 V2 2S K2 661 S 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.670 0.667 -0.448 0.200 0.691 0.690 -0.145 0.500 0.725 0.726 0.138 1.000 0.760 0.759 -0.132 2.000 0.801 0.800 -0.125 5.000 0.880 0.877 -0.341 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005