SPICE MODEL of TK50J60U (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK50J60U
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1

2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
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3. Transconductance Characteristics
Circuit Simulation Result
100
Measurement
Simulation
80
gf s (S)
60
40
20
0
0
20
40
60
80
100
Drain Current ID (A)
Comparison table
gfs (s)
Measurement
Simulation
Id(A)
Error (%)
1
2
7.700
10.950
7.953
11.214
3.29
2.41
5
17.250
17.619
2.14
10
24.250
24.737
2.01
20
50
33.750
52.000
34.629
53.674
2.60
3.22
100
72.000
74.256
3.13
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3

4. Vgs-Id Characteristics
Circuit Simulation result
80A
60A
40A
20A
0A
0V
2V
4V
6V
8V
10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
TK50J60U
10
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4

5. Comparison Graph
Circuit Simulation Result
80
Measurement
Simulation
Drain Current ID (A)
60
40
20
0
0
2
4
6
8
10
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A)
2
5
10
20
50
80
Measurement
5.35
5.6
5.875
6.275
7.15
7.800
Simulation
5.557
5.764
5.999
6.340
7.018
7.515
Error (%)
3.87
2.93
2.11
1.04
-1.85
-3.65
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5

6. Rds(on) Characteristics
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V
0.35V
0.70V
1.05V
1.40V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
TK50J60U
0Vdc
V1
10
0
Simulation Result
ID = 25A, VGS = 10V
R DS (on)
m
Measurement
56.000
Simulation
Error (%)
56.000
0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6

7. Gate Charge Characteristics
Circuit Simulation result
20V
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
0
20n
40n
60n
80n
100n
V(W1:3)
Time*1mA
Evaluation circuit
U1
TK50J60U
PER = 1000u
PW = 600u
TF = 5n
TR = 5n
TD = 0
I2 = 1m
I1 = 0
D2
Dbreak
I2
50
W1
VDD
+
I1
W
IOFF = 1mA
ION = 0uA
400
0
Simulation Result
VDD=400V, ID=50A,
Measurement
VGS=10V
Qgs
nC
23.000
Qgd
nC
25.000
Qg
nC
67.000
Simulation
Error (%)
24.995
23.913
60.201
8.67
-4.35
-10.15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
7

8. Capacitance Characteristics
Measurement
Simulation
Simulation Result
VDS (V)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
Cbd (pF)
Measurement
Simulation
28300.00
27725.00
25280.00
25800.00
22000.00
22600.00
18820.00
19000.00
16100.00
15850.00
11550.00
11680.00
9492.00
9425.00
7330.00
7250.00
Error (%)
-2.03
2.06
2.73
0.96
-1.55
1.13
-0.71
-1.09
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
8

9. Switching Time Characteristics
Circuit Simulation result
1
12V
2
240V
11V
220V
10V
200V
9V
180V
8V
160V
7V
140V
6V
120V
5V
100V
4V
80V
3V
60V
2V
40V
>>
0V
20V
0V
0.4us
1
0.8us
V(L1:2) 2
1.2us
V(U1:D)
1.6us
2.0us
2.4us
Time
Evaluation circuit
L2
50nH
L1
R1
V1 = 0
V2 = 20
TD = 1u
TR = 5n
TF = 5n
PW = 10u
PER = 20u
50
RL
8
U1
TK50J60U
30nH
VDD
200Vdc
V2
R2
50
0
Simulation Result
ID=25A, VDD=200V
VGS=0/10V
ton
ns
Measurement
200.000
Simulation
Error (%)
309.077
54.54
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9

10. Output Characteristics
Circuit Simulation result
100A
10
8
7.5
80A
60A
7
6.8
40A
6.5
20A
VGS=6V
0A
0V
4V
8V
12V
16V
20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U1
TK50J60U
20
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10

11. Forward Current Characteristics
Circuit Simulation Result
100A
10A
1.0A
100mA
0V
0.3V
0.6V
0.9V
1.2V
1.5V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
TK50J60U
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11

12. Comparison Graph
Circuit Simulation Result
Drain reverse current IDR (A)
100.0
Measurement
Simulation
10.0
1.0
0.1
0
0.3
0.6
0.9
Source - Drain voltage VSD (V)
1.2
1.5
Simulation Result
IDR(A)
0.1
0.2
0.5
1
2
5
10
20
50
100
VSD(V)
Measurement
Simulation
0.610
0.609
0.627
0.626
0.650
0.651
0.675
0.676
0.705
0.705
0.755
0.754
0.802
0.803
0.875
0.872
1.030
1.033
1.270
1.269
%Error
-0.16
-0.16
0.15
0.15
0.03
-0.13
0.12
-0.34
0.29
-0.09
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4us
8us
I(R1)
12us
16us
20us
24us
28us
32us
36us
40us
Time
Evaluation Circuit
R1
50
V1 = -9.45v
V2 = 10.65v
TD = 0.5us
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
V1
U1
TK50J60U
0
Compare Measurement vs. Simulation
Measurement
trj
µs
0.960
Simulation
Error (%)
0.927
-3.44
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13

14. Reverse Recovery Characteristics
Reference
Measurement
Trj= 0.960 (us)
Trb= 1.760 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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14