SPICE MODEL of TPCA8006-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCA8006-H
MANUFACTURER: TOSHIBA
Body Diode : Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
25
Measurement
Simulation
Transconductance GFS (s)
20
15
10
5
0
0 2 4 6 8 10 12 14 16
Drain Current ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1.000 5.580 5.814 4.19
2.000 7.840 8.032 2.45
4.000 10.880 10.959 0.73
8.000 14.739 14.815 0.51
16.000 20.000 19.729 -1.36
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
40A
32A
24A
16A
8A
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
V_VGS
Evaluation circuit
Vsense
U1
TPCA8006-H
VDS
0Vdc
VGS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
40
Measurement
Simulation
32
Drain Current ID (A)
24
16
8
0
4 5 6 7 8 9
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 5.780 5.889 1.89
2.000 6.010 6.037 0.44
4.000 6.235 6.251 0.26
8.000 6.550 6.567 0.25
16.000 7.000 7.037 0.52
24.000 7.370 7.416 0.62
32.000 7.700 7.749 0.64
40.000 8.000 8.053 0.65
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
9.0A
7.2A
5.4A
3.6A
1.8A
0A
0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TPCA8006-H
VDS
0Vdc
VGS
10Vdc
0
Simulation Result
ID = 9A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 41.000 41.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 4n 8n 12n 16n 20n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
U3 D1
TPCA8006-H Dbreak 18Adc
W1
+
-
I2
TD = 0 W VD
ION = 0A 80Vdc
IOFF = 1mA
0
Simulation Result
VDD=80V, ID=18A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 5.600 5.615 -0.26
Qgd nC 4.000 3.984 0.40
Qg nC 12.000 12.139 -1.14
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error(%)
Measurement Simulation
0.100 1600.000 1590.000 0.62
0.200 1510.000 1500.000 0.66
0.500 1350.000 1360.000 -0.73
1.000 1120.000 1110.000 0.90
2.000 895.000 893.000 0.22
5.000 570.000 572.000 -0.35
10.000 382.000 388.000 -1.54
20.000 259.000 262.000 -1.14
50.000 143.000 144.000 -0.69
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us 5.10us
V(2) V(3)/5
Time
Evaluation circuit
Vsense RL
3
50nH 5.6
U1
R1 L3 TPCA8006-H
2 VDD
50Vdc
V1 = 0 4.7 30nH
V2 = 20 V1
TD = 5u R2
TR = 10n 4.7
TF = 10n
PW = 10u
PER = 10m
0
Simulation Result
ID=9 A, VDD=50V
Measurement Simulation Error(%)
VGS=0/10V
ton ns 13.000 12.967 0.25
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
50A
10 9
45A
8.5
40A
8.0
35A
30A
7.5
25A
20A
7.0
15A
10A
6.5
5A
VGS=6V
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VD
Evaluation circuit
Vsense
U1 VD
TPCA8006-H 0Vdc
VGS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
TPCA8006-H
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Drain reverse Current - IDR (A)
Simulatio
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.100 0.640 0.636 -0.56
0.200 0.660 0.660 0.00
0.500 0.695 0.693 -0.24
1.000 0.720 0.723 0.42
2.000 0.760 0.760 -0.03
5.000 0.825 0.822 -0.38
10.000 0.915 0.904 -1.19
20.000 1.020 1.015 -0.50
30.000 1.100 1.106 0.58
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.9us 1.1us 1.3us 1.5us
I(R1)
Time
Evaluation Circuit
R1
50
U1
V1 = -9.4V V1 TPCA8006-H
V2 = 10.6V
TD = 7ns
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 17.500 17.338 0.93
trb ns 140.000 140.100 -0.07
trr ns 157.500 157.438 0.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Measurement
Trj=17.50(ns)
Trb=140.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008