SPICE MODEL of MTM23223 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: MTM23223
MANUFACTURER: PANASONIC
Body Diode (Model Parameters) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

10

8

6
gfs

4

2

Measurement
Simulation
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.01 0.500 0.500 0.000
0.02 2.000 2.000 0.000
0.05 2.780 2.900 4.317
0.1 3.800 3.833 0.868
0.2 5.000 5.000 0.000
0.5 6.300 6.250 -0.794
1 7.700 7.692 -0.104


Vgs-Id Characteristic

Circuit Simulation result

1.0A

100mA

10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U25
Vv ariable
10Vdc
MTM23223
10Vdc

V2

0


Comparison Graph


1.00
Measurement
0.90 Simulation

0.80

0.70
ID - Drain Current - A

0.60

0.50

0.40

0.30

0.20

0.10

0.00
0 0 0 1 1 1 1 1 2 2 2
VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(A) Error (%)
0.01 0.850 0.858 0.941
0.02 0.860 0.868 0.930
0.05 0.880 0.885 0.568
0.1 0.900 0.905 0.556
0.2 0.930 0.933 0.323
0.5 0.980 0.987 0.714
1 1.050 1.051 0.095


Rds(on) Characteristic


1.5A

1.0A

0.5A

0A
0V 20mV 40mV 50mV
I(V3)
V_VDS
Evaluation circuit

V3

0Vdc

U25
VDS

4Vdc MTM23223
0Vdc

VGS

0

Simulation Result

ID=1A,
Measurement Simulation Error (%)
VGS=4V
R DS (on)  0.020 0.020 0


Gate Charge Characteristic

7.0V

6.0V

5.0V

4.0V

3.0V

2.0V

1.0V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

U25 Dbreak
W1
+
PER = 1000u MTM23223 D1
PW = 600u
- I2
TF = 10n W 4.5Adc
TR = 10n IOFF = 1mA
TD = 0 ION = 0uA
I2 = 1m
I1 = 0 I1
V1
16Vdc

0

Simulation Result

VDD=16V,ID=4.5A
Measurement Simulation Error (%)
,VGS=5V
Qgs(nc) 2.000 2.009 0.450
Qgd(nc) 1.500 1.504 0.267
Qg(nc) 15.000 10.226 -31.827


Gate Charge Characteristic Reference

VGS-Qg

7
6
5
4
VGS (V)

3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Qg (nC)


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
2 14.000 14.046 0.329
3 13.000 13.374 2.877
5 12.000 11.920 -0.667
10 10.000 10.132 1.320
15 9.000 9.051 0.567


Switching Time Characteristic

12V

10V

8V

6V

4V

2V

0V

1.92us 2.00us 2.10us 2.20us 2.30us
V(L1:1)*2.5 V(L2:2)
Time
Evaluation circuit

L2 R2

10nH
50
R1 L1
U25
V1 = 0
10nH
V2 = 8 V2 50 V1
R3 MTM23223
TD = 2u
TR = 5n 50 10Vdc
TF = 5n
PW = 10u
PER = 200u

0

Simulation Result

ID=1 A, VDD=10V
Measurement Simulation Error(%)
VGS=0/4V
Ton(ns) 16.000 16.526 3.288


Output Characteristic


5.0A

4.0A

3.0A

1.2

2.0A

1.1
1.0A

VGS=1V
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U27
Vv ariable

Vstep MTM23223
10Vdc

10Vdc

0


Forward Current Characteristic


1.0A

100mA

10mA

1.0mA
0V 0.4V 0.8V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

MTM23223
V1
0Vdc U25

0


Comparison Graph


Measurement
Simulation

0.81
Drain reverse current IDR(A)

0.61

0.41

0.21

0.01
0 0.2 0.4 0.6 0.8 1 1.2

Source-Drain voltage VSD(V)

Simulation Result

VSD(V) VSD(V)
IDR(A) Measurement Simulation %Error
0.010 0.500 0.504 0.800
0.020 0.510 0.517 1.373
0.050 0.530 0.535 0.943
0.100 0.550 0.553 0.545
0.200 0.570 0.573 0.526
0.500 0.600 0.600 0.000
1.000 0.620 0.622 0.323


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
Time

Evaluation Circuit

R1

50

V1 = -9.4v
V1
V2 = 10.6v MTM23223
TD = 12n
TR = 8ns
TF = 8ns U23
PW = 1us
PER = 100us

0

Compare Measurement vs. Simulation

Trr Measurement Simulation Error (%)
Trj+Trb(ns) 51.500 52.485 1.913


Reverse Recovery Characteristic Reference

Trj=5.5(ns)
Trb=46(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc

Ropen
U25
100MEG
MTM23223
0


Zener Voltage Characteristic Reference


SPICE MODEL of MTM23223 (Standard+BDS Model) in SPICE PARK

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