This document provides a device modeling report that includes:
1) SPICE models for the power MOSFET and its body diode, including parameters, simulation results and comparisons to measurements for key characteristics like transconductance, Vgs-Id, Rds(on), gate charge, capacitance and switching/recovery times.
2) SPICE models for the ESD protection diode, including simulation results for zener voltage characteristic.
3) References and examples for some diode parameters.
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Device Modeling Report Parameters
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM3J108TU
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
I(R1)
Time
Evaluation Circuit
R1
50 U1
SSM3J108TU
V1 = -9.5v V1
V2 = 10.6v
TD = 12n
TR = 5ns
TF = 5ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 13.000 12.980 -0.154
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14. Reverse Recovery Characteristic Reference
Trj=4.2(ns)
Trb=8.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
0uA
2uA
4uA
6uA
8uA
10uA
20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc SSM3J108TU
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008