This document provides a device modeling report that includes SPICE models and simulation results for the power MOSFET and body diode components of the SSM3J314T part from Toshiba. It includes equivalent circuit diagrams, parameter descriptions, and simulation results comparing measurements to simulations for various electrical characteristics like transconductance, capacitance, switching time, and more. The report also provides a SPICE model and simulation results for the ESD protection diode on the device.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM3J314T
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.100 1.330 1.299 -2.331
0.200 1.880 1.852 -1.489
0.500 2.910 2.907 -0.103
1.000 4.100 4.065 -0.854
2.000 5.650 5.634 -0.283
5.000 8.800 8.636 -1.864
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Vgs-Id Characteristic
Circuit Simulation result
-10A
-100mA
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
SSM3J314T
V2
-5
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.100 1.950 2.023 3.744
0.200 2.050 2.086 1.756
0.500 2.200 2.209 0.409
1.000 2.330 2.351 -0.901
2.000 2.540 2.546 -0.236
5.000 2.900 2.958 -2.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Rds(on) Characteristic
Circuit Simulation result
-2.0A
-1.0A
0A
0V -50mV -100mV -150mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U1
SSM3J314T
VDS
10Vdc
VGS
-10Vdc
0
Simulation Result
ID=-2A, VGS=-10V Measurement Simulation Error (%)
R DS (on) () 0.038 0.038 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 3n 6n 9n 12n 15n
V(W1:4)
Time*1mA
Evaluation circuit
U1
ION = 0uA SSM3J314T
IOFF = 1mA
W
-
+
W1 D2 I2
I1 = 0 I1 Dbreak 2
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -15
0
Simulation Result
VDD=-15V,ID=-3.5A Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 1.800 1.786 -0.778
Qgd(nc) 2.600 2.607 0.269
Qg(nc) 11.300 11.250 -0.442
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Capacitance Characteristic
Simulation Result
Cbd(pF)
-VDS(V) Error(%)
Measurement Simulation
0.100 120.000 121.000 0.833
0.200 110.000 110.500 0.455
0.500 92.000 92.000 0.000
1.000 75.000 75.500 0.667
2.000 58.000 58.250 0.431
5.000 40.000 40.025 0.062
10.000 30.000 30.000 0.000
20.000 22.000 22.050 0.227
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Switching Time Characteristic
Circuit Simulation result
-20V
-15V
-10V
-5V
0V
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(L1:2)*3.75 V(R2:2)
Time
Evaluation circuit
R2
L2 15
50nH
U1
R3 L1
SSM3J314T
PER = 200u
PW = 10u 30nH V1
TF = 1n 10 -15Vdc
TR = 1n R1
TD = 2u
V2 = 8 V2 10
V1 = 0
0
Simulation Result
ID=-1A, VDD=-15V
Measurement Simulation Error(%)
VGS=-4V
Ton(ns) 20.000 19.455 -2.725
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Output Characteristic
Circuit Simulation result
-10V -5V -4V
-7.0A
-6.0A
-5.0A
-3V
-4.0A
-3.0A
-2.0A VGS= -2.5V
V
-1.0A
0A
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
SSM3J314T
V2
V1 -5
-2.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
1.0mA
0V 0.4V 0.8V 1.2V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
SSM3J314T
VDS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.001 0.550 0.552 0.364
0.002 0.570 0.567 -0.526
0.005 0.588 0.587 -0.170
0.010 0.602 0.603 0.166
0.020 0.620 0.619 -0.161
0.050 0.640 0.641 0.156
0.100 0.660 0.66 0.000
0.200 0.685 0.682 -0.438
0.500 0.720 0.719 -0.139
1.000 0.750 0.753 0.400
2.000 0.795 0.795 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 2n U1
TR = 1ns DSSM3J314T
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj(ns) 9.600 9.606 0.063
trb(ns) 13.600 13.671 0.522
trr(ns) 23.200 23.277 0.332
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. Reverse Recovery Characteristic Reference
Trj=9.6 (ns)
Trb=13.6 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
SSM3J314T
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008