SPICE MODEL of 2SA2121 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA2121
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
VAR Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
500
100
10
5.0
-30mA -100mA -30A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SA2121
V1
I1
0Adc 5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.01 0.1 1 10
- IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.03 105.000 106.253 1.193
-0.05 110.000 109.487 -0.466
-0.1 115.000 114.227 -0.672
-0.2 118.000 118.292 0.247
-0.5 120.000 121.516 1.263
-1 120.000 121.085 0.904
-2 115.000 116.076 0.936
-5 93.000 96.858 4.148
-10 68.000 68.579 0.851
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-5.0V
-100mV
-30mV
-30mA -100mA -30A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA2121
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
- VCE(SAT) (V)
0.1
0.01
0.01 0.1 1 10
- IC(A)
Simulation Result
- VCE(sat)
- IC(A) Error(%)
Measurement Simulation
0.03 0.070 0.071 1.429
0.05 0.065 0.066 1.538
0.1 0.058 0.060 3.448
0.2 0.060 0.059 -1.667
0.5 0.075 0.074 -1.333
1 0.110 0.110 0.000
2 0.185 0.187 1.081
5 0.430 0.425 -1.163
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-100mA -10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA2121
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
- VBE(SAT) (V)
0.1
0.01
0.1 1 10
- IC(A)
Simulation Result
- VBE(sat)
- IC(A) Error(%)
Measurement Simulation
0.1 0.625 0.632 -1.120
0.5 0.700 0.685 -2.143
1 0.730 0.712 -2.466
5 0.790 0.805 1.899
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
200mA 4.0A
1 2
150mA 3.0A
100mA 2.0A
50mA 1.0A
-0mA 0A
-50mA -1.0A
-100mA -2.0A
-150mA -3.0A
>>
-200mA -4.0A
18us 19us 20us 21us 22us 23us 24us 25us 26us 27us
1 IB(Q1) 2 IC(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 18
L2
50
Q1
PER = 50us R2 Q2SA2121
50nH
PW = 20us
TF = 100ns V2
TR = 100ns 104 -36
TD = 0.7us
V2 = 6
V1
V1 = -2
0
Simulation result
Measurement Simulation %Error
tstg (us) 1.900 1.891 -0.474
tf (us) 0.280 0.281 0.357
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
-20A
-16A - 300mA
- 200mA
-12A
-100mA
-8A
- 50mA
-4A
IB=-20mA
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SA2121
I1 V1
0Adc
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006