SPICE MODEL of IDT12S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT12S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT12S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT12S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
40
Measurement
Simulation
30
Forword Current, IF (A)
20
10
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.950 0.946 -0.42
1 0.980 0.984 0.41
2 1.014 1.041 2.66
5 1.179 1.183 0.34
10 1.420 1.398 -1.55
20 1.830 1.810 -1.09
40 2.600 2.615 0.58
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT12S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
1.E+02
Measurement
Simulation
1.E+01
Reverse Current, I R (A)
1.E+00
1.E-01
1.E-02
1.E-03
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.200E-03 2.156E-03 -2.00
200 9.400E-03 9.775E-03 3.99
500 1.000E+00 9.680E-01 -3.20
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
700p
600p
500p
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDT12S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
700
Measurement
Simulation
600
500
Capacitance, C (pF)
400
300
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 579.412 584.477 0.87
1 524.509 535.000 2.00
2 454.902 463.366 1.86
5 344.118 345.312 0.35
10 268.627 260.000 -3.21
20 200.000 191.075 -4.46
50 135.294 130.285 -3.70
100 100.000 102.187 2.19
200 80.509 84.484 4.94
500 74.509 71.000 -4.71
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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